View source for 17943840. TRANSISTOR DEVICES WITH INTEGRATED DIODES simplified abstract (Intel Corporation)

=TRANSISTOR DEVICES WITH INTEGRATED DIODES=


==Organization Name==

[[:Category:Intel Corporation|Intel Corporation]]


[[Category:Intel Corporation]]

==Inventor(s)==

[[:Category:Nicholas A. Thomson of Hillsboro OR (US)|Nicholas A. Thomson of Hillsboro OR (US)]][[Category:Nicholas A. Thomson of Hillsboro OR (US)]]

[[:Category:Ayan Kar of Portland OR (US)|Ayan Kar of Portland OR (US)]][[Category:Ayan Kar of Portland OR (US)]]

[[:Category:Kalyan C. Kolluru of Portland OR (US)|Kalyan C. Kolluru of Portland OR (US)]][[Category:Kalyan C. Kolluru of Portland OR (US)]]

[[:Category:Mauro J. Kobrinksy of Portland OR (US)|Mauro J. Kobrinksy of Portland OR (US)]][[Category:Mauro J. Kobrinksy of Portland OR (US)]]

[[:Category:Benjamin Orr of Beaverton OR (US)|Benjamin Orr of Beaverton OR (US)]][[Category:Benjamin Orr of Beaverton OR (US)]]

==TRANSISTOR DEVICES WITH INTEGRATED DIODES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17943840 titled 'TRANSISTOR DEVICES WITH INTEGRATED DIODES

==Simplified Explanation==

The patent application describes an integrated circuit structure with specific dopant regions for electrostatic discharge protection.

* The integrated circuit structure includes a sub-fin with a first type of dopant, a first diffusion region with the same dopant in contact with the sub-fin, and second and third diffusion regions with a different type of dopant in contact with the sub-fin.
* The first diffusion region acts as a tap diffusion region for forming a diode for electrostatic discharge protection.
* A first body of semiconductor material extends from the second diffusion region to the third diffusion region, while a second body extends from the first diffusion region towards the second diffusion region.

== Potential Applications ==
The technology described in the patent application can be applied in various electronic devices requiring electrostatic discharge protection, such as smartphones, tablets, and computers.

== Problems Solved ==
This technology solves the problem of electrostatic discharge damaging integrated circuits by providing a diode for protection.

== Benefits ==
The integrated circuit structure offers improved electrostatic discharge protection, enhancing the reliability and longevity of electronic devices.

== Potential Commercial Applications ==
* Enhancing the durability and reliability of consumer electronics
* Improving the performance of industrial equipment

== Unanswered Questions ==

=== How does the integration of different dopant regions improve electrostatic discharge protection? ===
The patent application does not delve into the specific mechanisms behind the effectiveness of the integrated dopant regions for electrostatic discharge protection.

=== Are there any limitations to the application of this technology in certain electronic devices? ===
The patent application does not address any potential limitations or challenges in implementing this technology in specific electronic devices.


==Original Abstract Submitted==

An integrated circuit structure includes a sub-fin having a first type of dopant, a first diffusion region having the first type of dopant and in contact with the sub-fin, and a second diffusion region and a third diffusion region having a second type of dopant and in contact with the sub-fin. The first type of dopant is one of p-type or n-type dopant, and where the second type of dopant is the other of the p-type or n-type dopant. A first body of semiconductor material extends from the second diffusion region to the third diffusion region, and a second body of semiconductor material extends from the first diffusion region towards the second diffusion region. The first diffusion region is a tap diffusion region contacting the sub-fin. In an example, the first diffusion region facilitates formation of a diode for electrostatic discharge (ESD) protection of the integrated circuit structure.



[[Category:H01L27/02]]
[[Category:H01L23/528]]
[[Category:H01L29/06]]
[[Category:H01L29/861]]