View source for 17936934. METAL GATE CUT FORMED AFTER SOURCE AND DRAIN CONTACTS simplified abstract (Intel Corporation)

=METAL GATE CUT FORMED AFTER SOURCE AND DRAIN CONTACTS=


==Organization Name==

[[:Category:Intel Corporation|Intel Corporation]]


[[Category:Intel Corporation]]

==Inventor(s)==

[[:Category:Swapnadip Ghosh of Hillsboro OR (US)|Swapnadip Ghosh of Hillsboro OR (US)]][[Category:Swapnadip Ghosh of Hillsboro OR (US)]]

[[:Category:Matthew J. Prince of Portland OR (US)|Matthew J. Prince of Portland OR (US)]][[Category:Matthew J. Prince of Portland OR (US)]]

[[:Category:Alison V. Davis of Portland OR (US)|Alison V. Davis of Portland OR (US)]][[Category:Alison V. Davis of Portland OR (US)]]

[[:Category:Chun C. Kuo of Hillsboro OR (US)|Chun C. Kuo of Hillsboro OR (US)]][[Category:Chun C. Kuo of Hillsboro OR (US)]]

[[:Category:Andrew Arnold of Hillsboro OR (US)|Andrew Arnold of Hillsboro OR (US)]][[Category:Andrew Arnold of Hillsboro OR (US)]]

[[:Category:Reza Bayati of Portland OR (US)|Reza Bayati of Portland OR (US)]][[Category:Reza Bayati of Portland OR (US)]]

==METAL GATE CUT FORMED AFTER SOURCE AND DRAIN CONTACTS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17936934 titled 'METAL GATE CUT FORMED AFTER SOURCE AND DRAIN CONTACTS

==Simplified Explanation==

The patent application describes techniques for forming semiconductor devices with a gate cut after the formation of source/drain contacts. This involves a gate structure surrounding a semiconductor region extending from a source region to a drain region, with conductive contacts formed over the source and drain regions along a source/drain trench. The gate structure is interrupted by a dielectric gate cut that extends into the source/drain trench, cutting into the contacts. The contacts are formed before the gate cut to ensure complete fill of conductive material, with a liner structure on the contacts broken by the intrusion of the gate cut.

* Semiconductor devices with gate cut formed after source/drain contacts
* Gate structure around semiconductor region from source to drain
* Conductive contacts over source and drain regions along source/drain trench
* Dielectric gate cut extending into source/drain trench, cutting into contacts
* Contacts formed before gate cut for complete fill of conductive material
* Liner structure on contacts broken by intrusion of gate cut

== Potential Applications ==
The technology described in the patent application could be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits, microprocessors, and memory chips.

== Problems Solved ==
This technology solves the problem of ensuring complete fill of conductive material when forming source/drain contacts in semiconductor devices with gate cuts.

== Benefits ==
The benefits of this technology include improved device performance, increased reliability, and enhanced manufacturing efficiency in semiconductor fabrication processes.

== Potential Commercial Applications ==
The technology could find commercial applications in the semiconductor industry for producing high-performance and reliable electronic devices.

== Possible Prior Art ==
One possible prior art could be the use of gate cuts in semiconductor devices, but the specific technique of forming source/drain contacts before the gate cut to ensure complete fill of conductive material may be novel.

=== Unanswered Questions ===

=== How does this technology impact the overall cost of semiconductor device manufacturing? ===
The patent application does not provide specific information on the cost implications of implementing this technology in semiconductor device manufacturing processes. 

=== What are the potential challenges or limitations of this technology in practical applications? ===
The patent application does not address any potential challenges or limitations that may arise when implementing this technology in practical applications.


==Original Abstract Submitted==

Techniques are provided herein to form semiconductor devices that include a gate cut formed after the formation of source/drain contacts. In an example, a semiconductor device includes a gate structure around or otherwise on a semiconductor region that extends from a source region to a drain region. Conductive contacts formed over the source and drain regions along a source/drain trench. The gate structure may be interrupted with a dielectric gate cut that further extends past the gate trench and into the source/drain trench where it can cut into one or more of the contacts. The contacts are formed before the gate cut to ensure complete fill of conductive material when forming the contacts. Accordingly, a liner structure on the conductive contacts is also broken by the intrusion of the gate cut and does not extend further up or down the sidewalls of the gate cut.



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