View source for 17936434. VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN CONNECTIONS simplified abstract (International Business Machines Corporation)

=VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN CONNECTIONS=


==Organization Name==

[[:Category:International Business Machines Corporation|International Business Machines Corporation]]


[[Category:International Business Machines Corporation]]

==Inventor(s)==

[[:Category:Brent A. Anderson of Jericho VT (US)|Brent A. Anderson of Jericho VT (US)]][[Category:Brent A. Anderson of Jericho VT (US)]]

[[:Category:Albert M. Chu of Nashua NH (US)|Albert M. Chu of Nashua NH (US)]][[Category:Albert M. Chu of Nashua NH (US)]]

[[:Category:Nicholas Anthony Lanzillo of Wynantskill NY (US)|Nicholas Anthony Lanzillo of Wynantskill NY (US)]][[Category:Nicholas Anthony Lanzillo of Wynantskill NY (US)]]

[[:Category:Ruilong Xie of Niskayuna NY (US)|Ruilong Xie of Niskayuna NY (US)]][[Category:Ruilong Xie of Niskayuna NY (US)]]

[[:Category:Lawrence A. Clevenger of Saratoga Springs NY (US)|Lawrence A. Clevenger of Saratoga Springs NY (US)]][[Category:Lawrence A. Clevenger of Saratoga Springs NY (US)]]

[[:Category:REINALDO Vega of Mahopac NY (US)|REINALDO Vega of Mahopac NY (US)]][[Category:REINALDO Vega of Mahopac NY (US)]]

==VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN CONNECTIONS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17936434 titled 'VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN CONNECTIONS

==Simplified Explanation==

The abstract describes a patent application for a Vertical Tunneling Field Effect Transistor (VTFET) on a wafer with a backside power delivery network. The VTFET has backside contacts connected to different regions of the device and the power delivery network.

* VTFET on a wafer with a backside power delivery network
* First backside contact connected to bottom source/drain region and first portion of power delivery network
* Second backside contact connected to top source/drain region and second portion of power delivery network

== Potential Applications ==
The technology described in this patent application could be applied in the following areas:
* Power electronics
* Semiconductor devices
* Integrated circuits

== Problems Solved ==
The innovation addresses the following issues:
* Efficient power delivery in VTFET devices
* Enhanced performance of semiconductor components
* Improved integration of power networks in electronic devices

== Benefits ==
The technology offers the following benefits:
* Higher efficiency in power delivery
* Increased performance of VTFET devices
* Enhanced reliability of integrated circuits

== Potential Commercial Applications ==
The technology could find commercial applications in:
* Consumer electronics
* Automotive industry
* Telecommunications sector

== Possible Prior Art ==
One possible prior art for this technology could be the development of backside power delivery networks in other types of transistors or semiconductor devices.

=== Unanswered Questions ===

=== How does this technology compare to traditional power delivery methods in VTFET devices? ===
The article does not provide a direct comparison between the new backside power delivery network and traditional methods used in VTFET devices. It would be interesting to see a side-by-side analysis of the performance, efficiency, and reliability of both approaches.

=== What are the potential challenges in implementing this technology on a large scale in semiconductor manufacturing? ===
The article does not address the potential obstacles or difficulties that may arise when scaling up the production of VTFET devices with backside power delivery networks. It would be valuable to explore the practical implications and feasibility of mass-producing such components.


==Original Abstract Submitted==

A VTFET is provided on a wafer. A backside power delivery network is on a backside of the wafer. A first backside contact is connected to a bottom source/drain region of the VTFET and a first portion of the backside power delivery network. A second backside contact is connected to top source/drain region of the VTFET and a second portion of the backside power delivery network.



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