View source for 17932016. RESIDUAL LAYER THICKNESS MODULATION IN NANOIMPRINT LITHOGRAPHY simplified abstract (Google LLC)

=RESIDUAL LAYER THICKNESS MODULATION IN NANOIMPRINT LITHOGRAPHY=


==Organization Name==

[[:Category:Google LLC|Google LLC]]


[[Category:Google LLC]]

==Inventor(s)==

[[:Category:Wei Jin of Saratoga CA (US)|Wei Jin of Saratoga CA (US)]][[Category:Wei Jin of Saratoga CA (US)]]

[[:Category:Lu Tian of Palo Alto CA (US)|Lu Tian of Palo Alto CA (US)]][[Category:Lu Tian of Palo Alto CA (US)]]

[[:Category:Thomas Mercier of Weston FL (US)|Thomas Mercier of Weston FL (US)]][[Category:Thomas Mercier of Weston FL (US)]]

==RESIDUAL LAYER THICKNESS MODULATION IN NANOIMPRINT LITHOGRAPHY - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17932016 titled 'RESIDUAL LAYER THICKNESS MODULATION IN NANOIMPRINT LITHOGRAPHY

==Simplified Explanation==

The improved nanoimprint lithography process involves controlling the height of the pattern by adjusting the thickness of a residual layer of resin left behind after UV curing and releasing the nanoimprint mold from the resin layer. The thickness of the residual layer can be controlled by the fill factor of the nanoimprint mold or by droplets of resin in the resin layer.

* Nanoimprint lithography process with controlled height
* Height control achieved by adjusting thickness of residual resin layer
* Residual layer thickness controlled by fill factor of nanoimprint mold or resin droplets

== Potential Applications ==
The technology can be applied in the semiconductor industry for creating nanoscale patterns on substrates, in the manufacturing of optical devices, and in the production of microfluidic devices.

== Problems Solved ==
This technology solves the problem of achieving precise control over the height of patterns in nanoimprint lithography, which is crucial for various applications in nanotechnology and microfabrication.

== Benefits ==
The benefits of this technology include improved accuracy and repeatability in pattern transfer, enhanced resolution in nanoscale patterning, and increased efficiency in the production of nanostructured devices.

== Potential Commercial Applications ==
* "Nanoimprint Lithography Process for Controlled Height Patterns"

== Possible Prior Art ==
There are existing methods for controlling pattern height in nanoimprint lithography, such as using sacrificial layers or adjusting the pressure during imprinting. However, the specific technique of controlling height through the thickness of a residual resin layer may be a novel approach.

=== Unanswered Questions ===

=== How does this technology compare to other methods of controlling pattern height in nanoimprint lithography? ===
This article does not provide a direct comparison with other methods, such as sacrificial layers or pressure adjustments, to evaluate the effectiveness and efficiency of the proposed technique.

=== What are the limitations or challenges of implementing this technology in industrial-scale manufacturing processes? ===
The article does not address the scalability of the process, potential issues with throughput, or compatibility with existing manufacturing equipment in large-scale production environments.


==Original Abstract Submitted==

An improved nanoimprint lithography process is presented in which the height is controlled by the thickness of a residual layer of resin leftover after ultraviolet curing and releasing of a nanoimprint mold from a resin layer. Moreover, the thickness of the residual layer may be controlled by a fill factor of either a nanoimprint mold that transfers its pattern to a resin layer disposed on a substrate, or by droplets of resin in the resin layer.



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