View source for 17884468. SEMICONDUCTOR DEVICE INTERCONNECTS HAVING CONDUCTIVE ANNULUS-STABILIZED THROUGH-SILICON VIAS simplified abstract (Micron Technology, Inc.)

=SEMICONDUCTOR DEVICE INTERCONNECTS HAVING CONDUCTIVE ANNULUS-STABILIZED THROUGH-SILICON VIAS=


==Organization Name==

[[:Category:Micron Technology, Inc.|Micron Technology, Inc.]]


[[Category:Micron Technology, Inc.]]

==Inventor(s)==

[[:Category:Ren Yuan Huang of Taichung (TW)|Ren Yuan Huang of Taichung (TW)]][[Category:Ren Yuan Huang of Taichung (TW)]]

[[:Category:Kuan Wei Tseng of Taichung (TW)|Kuan Wei Tseng of Taichung (TW)]][[Category:Kuan Wei Tseng of Taichung (TW)]]

[[:Category:Te Pao of Taichung (TW)|Te Pao of Taichung (TW)]][[Category:Te Pao of Taichung (TW)]]

[[:Category:Koji Torii of Taichung (TW)|Koji Torii of Taichung (TW)]][[Category:Koji Torii of Taichung (TW)]]

==SEMICONDUCTOR DEVICE INTERCONNECTS HAVING CONDUCTIVE ANNULUS-STABILIZED THROUGH-SILICON VIAS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17884468 titled 'SEMICONDUCTOR DEVICE INTERCONNECTS HAVING CONDUCTIVE ANNULUS-STABILIZED THROUGH-SILICON VIAS

==Simplified Explanation==

* A semiconductor device assembly with a through-silicon via (TSV) that has an end region protruding from the back side of the substrate.
* The end region of the TSV is surrounded by a conductive annulus on the back side of the substrate.
* A dielectric layer is placed over the back side of the substrate, with its upper surface flush with the upper surface of the end region of the TSV and the conductive annulus.
* A bond pad is positioned over and electrically connected to the end region of the TSV and the conductive annulus.

== Potential Applications ==
* High-performance semiconductor devices
* Integrated circuits
* Microprocessors

== Problems Solved ==
* Improved electrical connectivity
* Enhanced signal transmission
* Increased reliability of semiconductor devices

== Benefits ==
* Higher performance capabilities
* Enhanced signal integrity
* Improved reliability and longevity of semiconductor devices


==Original Abstract Submitted==

A semiconductor device assembly including a through-silicon via (TSV) having an end region protruding from a back side of the substrate, the end region being surrounded by a conductive annulus disposed over the back side of the substrate; a dielectric layer disposed over the back side of the substrate, the dielectric layer having an upper surface flush with an upper surface of the end region of the TSV and flush with an upper surface of the conductive annulus; and a bond pad disposed over and electrically coupled to the end region of the TSV and the conductive annulus.



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[[Category:H01L21/768]]