View source for 17876737. DEVICE WITH TAPERED INSULATION STRUCTURE AND RELATED METHODS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

=DEVICE WITH TAPERED INSULATION STRUCTURE AND RELATED METHODS=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Co., Ltd.|Taiwan Semiconductor Manufacturing Co., Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Co., Ltd.]]

==Inventor(s)==

[[:Category:Ya-Yi Tsai of Hsinchu (TW)|Ya-Yi Tsai of Hsinchu (TW)]][[Category:Ya-Yi Tsai of Hsinchu (TW)]]

[[:Category:Sheng-Yi Hsiao of Hsinchu (TW)|Sheng-Yi Hsiao of Hsinchu (TW)]][[Category:Sheng-Yi Hsiao of Hsinchu (TW)]]

[[:Category:Shu-Yuan Ku of Hsinchu (TW)|Shu-Yuan Ku of Hsinchu (TW)]][[Category:Shu-Yuan Ku of Hsinchu (TW)]]

[[:Category:Ryan Chia-Jen Chen of Hsinchu (TW)|Ryan Chia-Jen Chen of Hsinchu (TW)]][[Category:Ryan Chia-Jen Chen of Hsinchu (TW)]]

==DEVICE WITH TAPERED INSULATION STRUCTURE AND RELATED METHODS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17876737 titled 'DEVICE WITH TAPERED INSULATION STRUCTURE AND RELATED METHODS

==Simplified Explanation==

The abstract of the patent application describes a semiconductor device that includes a transistor with a unique structure. The transistor has a source/drain feature, a fin channel, and a gate structure that wraps over the fin channel. Additionally, there is an insulation region located at the active edge of the transistor, which is the boundary of the active region. The insulation region includes a trench with a tapered portion. The width of the tapered portion of the trench at the top of the fin channel is greater than the width of the tapered portion at the bottom of the gate structure.

* The semiconductor device includes a transistor with a source/drain feature, fin channel, and gate structure.
* An insulation region is present at the active edge of the transistor, which is the boundary of the active region.
* The insulation region contains a trench with a tapered portion.
* The width of the tapered portion of the trench is greater at the top of the fin channel than at the bottom of the gate structure.

Potential Applications:
* This semiconductor device can be used in various electronic devices such as smartphones, tablets, and computers.
* It can be utilized in integrated circuits for improved performance and efficiency.

Problems Solved:
* The unique structure of the transistor and insulation region helps in reducing leakage current and improving device performance.
* It addresses the challenge of maintaining proper insulation at the active edge of the transistor.

Benefits:
* Improved performance and efficiency of electronic devices.
* Reduced leakage current, leading to better power management.
* Enhanced insulation at the active edge, preventing unwanted electrical interactions.




==Original Abstract Submitted==

A semiconductor device includes a transistor disposed in an active region. The transistor comprises a source/drain feature, a fin channel and a gate structure wrapping over the fin channel. The transistor also includes an insulation region disposed at an active edge. The active edge is at a boundary of the active region. The insulation region includes a trench. The trench has a tapered portion. A width of the tapered portion of the trench at a top of the fin channel is greater than a width of the tapered portion of the trench at a bottom of the gate structure.



[[Category:H01L29/78]]
[[Category:H01L27/092]]
[[Category:H01L29/66]]
[[Category:H01L21/8238]]