View source for 17876044. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

=SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Co., Ltd.|Taiwan Semiconductor Manufacturing Co., Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Co., Ltd.]]

==Inventor(s)==

[[:Category:Jhon Jhy Liaw of Hsinchu County (TW)|Jhon Jhy Liaw of Hsinchu County (TW)]][[Category:Jhon Jhy Liaw of Hsinchu County (TW)]]

==SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17876044 titled 'SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

==Simplified Explanation==

The patent application describes a method for forming patterns on a substrate to create static random access memory (SRAM) cells. The method involves the formation of channel, gate, and source/drain patterns on the substrate. 

* The first channel pattern is formed on the substrate, followed by the formation of first and second gate patterns that extend across the first channel pattern.
* First, second, and third source/drain patterns are then formed on the first channel pattern. The first and second source/drain patterns are located on opposite sides of the first gate pattern, while the second and third source/drain patterns are located on opposite sides of the second gate pattern.
* The combination of the first channel region, the first gate pattern, and the first and second source/drain patterns form a first read pull-down transistor of a first SRAM cell. Similarly, the second channel region, the second gate pattern, and the second and third source/drain patterns form a second read pull-down transistor of a second SRAM cell.

Potential applications of this technology:

* Memory devices: The method described in the patent application can be used to manufacture SRAM cells, which are commonly used in various memory devices such as computers, smartphones, and other electronic devices.
* Integrated circuits: SRAM cells are an essential component of integrated circuits, and this method can be applied to produce SRAM cells for use in various integrated circuit applications.

Problems solved by this technology:

* Efficient memory storage: SRAM cells provide fast and reliable data storage, and the method described in the patent application allows for the creation of SRAM cells with improved performance and reliability.
* Miniaturization: The method enables the formation of compact SRAM cells, which is crucial for the development of smaller and more advanced electronic devices.

Benefits of this technology:

* Improved performance: The method allows for the creation of SRAM cells with enhanced performance characteristics, such as faster read and write speeds.
* Higher density: The compact nature of the SRAM cells formed using this method enables higher memory density, allowing for more data storage in a smaller area.
* Reliability: The method ensures the formation of reliable SRAM cells, which are essential for the proper functioning of memory devices and integrated circuits.


==Original Abstract Submitted==

A method includes forming a first channel pattern on a substrate from a top view; forming first and second gate patterns extending across the first channel pattern; forming first, second, and third source/drain patterns on the first channel pattern, the first and second source/drain patterns on opposite sides of the first gate pattern and the second and third source/drain patterns on opposite sides of the second gate pattern, wherein a first channel region of the first channel pattern, the first gate pattern, and the first and second source/drain patterns form a first read pull-down transistor of a first static random access memory (SRAM) cell, and a second channel region of the first channel pattern, the second gate pattern, and the second and third source/drain patterns form a second read pull-down transistor of a second SRAM cell.



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