View source for 17869987. APPARATUS FOR GENERATING ETCHANTS FOR REMOTE PLASMA PROCESSES simplified abstract (Applied Materials, Inc.)

=APPARATUS FOR GENERATING ETCHANTS FOR REMOTE PLASMA PROCESSES=


==Organization Name==

[[:Category:Applied Materials, Inc.|Applied Materials, Inc.]]


[[Category:Applied Materials, Inc.]]

==Inventor(s)==

[[:Category:Tae Seung Cho of San Jose CA (US)|Tae Seung Cho of San Jose CA (US)]][[Category:Tae Seung Cho of San Jose CA (US)]]

[[:Category:David Michael Benjaminson of Campbell CA (US)|David Michael Benjaminson of Campbell CA (US)]][[Category:David Michael Benjaminson of Campbell CA (US)]]

[[:Category:Kenneth Schatz of Los Altos CA (US)|Kenneth Schatz of Los Altos CA (US)]][[Category:Kenneth Schatz of Los Altos CA (US)]]

[[:Category:Ryan Michael Pakulski of Brentwood CA (US)|Ryan Michael Pakulski of Brentwood CA (US)]][[Category:Ryan Michael Pakulski of Brentwood CA (US)]]

[[:Category:Martin Yue Choy of San Ramon CA (US)|Martin Yue Choy of San Ramon CA (US)]][[Category:Martin Yue Choy of San Ramon CA (US)]]

[[:Category:Pratheep Gunaseelan of Fremont CA (US)|Pratheep Gunaseelan of Fremont CA (US)]][[Category:Pratheep Gunaseelan of Fremont CA (US)]]

[[:Category:Chih-Yung Huang of San Jose CA (US)|Chih-Yung Huang of San Jose CA (US)]][[Category:Chih-Yung Huang of San Jose CA (US)]]

==APPARATUS FOR GENERATING ETCHANTS FOR REMOTE PLASMA PROCESSES - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17869987 titled 'APPARATUS FOR GENERATING ETCHANTS FOR REMOTE PLASMA PROCESSES

==Simplified Explanation==

The abstract describes a remote plasma source (RPS) that uses symmetrical hollow cathode cavities to increase etchant rates. The RPS includes an upper electrode and a lower electrode, both with hollow cavities that induce a hollow cathode effect. The electrodes are separated by a gap, and an annular dielectric cover fills part of the gap, creating a second gap between the cover and the upper electrode.

* The RPS uses symmetrical hollow cathode cavities to generate etchants more efficiently.
* The upper and lower electrodes induce a hollow cathode effect within their respective hollow cavities.
* The annular dielectric cover fills part of the gap between the electrodes, creating a second gap.
* The annular dielectric cover fills approximately 50% to 95% of the height of the first gap.

== Potential Applications ==
* Semiconductor manufacturing
* Thin film deposition
* Surface treatment processes

== Problems Solved ==
* Low etchant rates
* Inefficient etching processes
* Uneven etching results

== Benefits ==
* Increased etchant rates
* Improved etching efficiency
* More uniform and precise etching results


==Original Abstract Submitted==

A remote plasma source (RPS) for generating etchants leverages symmetrical hallow cathode cavities to increase etchant rates. The RPS includes an upper electrode with a first hollow cavity configured to induce a hollow cathode effect within the first hollow cavity, a lower electrode with a second hollow cavity configured to induce a hollow cathode effect within the second hollow cavity, wherein the first hollow cavity and the second hollow cavity are symmetrical, a first gap positioned between and electrically separating the upper electrode and the lower electrode, and an annular dielectric cover in direct contact with the lower electrode in the first gap and forms a second gap between an uppermost surface of the annular dielectric cover and a lowermost surface of the upper electrode. The annular dielectric cover fills approximately 50% to approximately 95% of a height of the first gap.



[[Category:H01J37/32]]