View source for 17852016. 2D LAYERED GATE OXIDE simplified abstract (Intel Corporation)

=2D LAYERED GATE OXIDE=


==Organization Name==

[[:Category:Intel Corporation|Intel Corporation]]


[[Category:Intel Corporation]]

==Inventor(s)==

[[:Category:Chelsey Dorow of Portland OR (US)|Chelsey Dorow of Portland OR (US)]][[Category:Chelsey Dorow of Portland OR (US)]]

[[:Category:Sudarat Lee of Hillsboro OR (US)|Sudarat Lee of Hillsboro OR (US)]][[Category:Sudarat Lee of Hillsboro OR (US)]]

[[:Category:Kevin P. O'brien of Portland OR (US)|Kevin P. O'brien of Portland OR (US)]][[Category:Kevin P. O'brien of Portland OR (US)]]

[[:Category:Ande Kitamura of Portland OR (US)|Ande Kitamura of Portland OR (US)]][[Category:Ande Kitamura of Portland OR (US)]]

[[:Category:Ashish Verma Penumatcha of Beaverton OR (US)|Ashish Verma Penumatcha of Beaverton OR (US)]][[Category:Ashish Verma Penumatcha of Beaverton OR (US)]]

[[:Category:Carl H. Naylor of Portland OR (US)|Carl H. Naylor of Portland OR (US)]][[Category:Carl H. Naylor of Portland OR (US)]]

[[:Category:Kirby Maxey of Hillsboro OR (US)|Kirby Maxey of Hillsboro OR (US)]][[Category:Kirby Maxey of Hillsboro OR (US)]]

[[:Category:Scott B. Clendenning of Portland OR (US)|Scott B. Clendenning of Portland OR (US)]][[Category:Scott B. Clendenning of Portland OR (US)]]

[[:Category:Uygar E. Avci of Portland OR (US)|Uygar E. Avci of Portland OR (US)]][[Category:Uygar E. Avci of Portland OR (US)]]

[[:Category:Chia-Ching Lin of Portland OR (US)|Chia-Ching Lin of Portland OR (US)]][[Category:Chia-Ching Lin of Portland OR (US)]]

==2D LAYERED GATE OXIDE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17852016 titled '2D LAYERED GATE OXIDE

==Simplified Explanation==

The abstract of this patent application describes a transistor device that includes a transition metal dichalcogenide (TMD) channel, a two-dimensional (2D) dielectric layer over the TMD channel, and a gate metal layer over the 2D dielectric.

* The transistor device includes a TMD channel.
* The TMD channel is a type of material used in the construction of the transistor.
* The transistor device also includes a 2D dielectric layer.
* The 2D dielectric layer is positioned over the TMD channel.
* The transistor device further includes a gate metal layer.
* The gate metal layer is positioned over the 2D dielectric layer.

== Potential Applications ==
* This transistor device can be used in various electronic devices, such as smartphones, tablets, and computers.
* It can be utilized in integrated circuits and microprocessors.
* The technology can be applied in the field of telecommunications and wireless communication devices.

== Problems Solved ==
* The transistor device addresses the need for improved performance and efficiency in electronic devices.
* It solves the problem of achieving higher speeds and lower power consumption in integrated circuits.
* The technology helps overcome limitations of traditional transistor designs.

== Benefits ==
* The use of a TMD channel and 2D dielectric layer can enhance the performance of the transistor device.
* It can lead to faster switching speeds and reduced power consumption.
* The technology offers potential for smaller and more efficient electronic devices.


==Original Abstract Submitted==

Embodiments disclosed herein include transistor devices. In an embodiment, the transistor comprises a transition metal dichalcogenide (TMD) channel. In an embodiment, a two dimensional (2D) dielectric is over the TMD channel. In an embodiment, a gate metal is over the 2D dielectric.



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