View source for 17850811. INTEGRATED CIRCUIT WITH BOTTOM DIELECTRIC INSULATORS AND FIN SIDEWALL SPACERS FOR REDUCING SOURCE/DRAIN LEAKAGE CURRENTS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

=INTEGRATED CIRCUIT WITH BOTTOM DIELECTRIC INSULATORS AND FIN SIDEWALL SPACERS FOR REDUCING SOURCE/DRAIN LEAKAGE CURRENTS=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Company, Ltd.|Taiwan Semiconductor Manufacturing Company, Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Company, Ltd.]]

==Inventor(s)==

[[:Category:Jung-Hung Chang of Hsinchu (TW)|Jung-Hung Chang of Hsinchu (TW)]][[Category:Jung-Hung Chang of Hsinchu (TW)]]

[[:Category:Zhi-Chang Lin of Hsinchu (TW)|Zhi-Chang Lin of Hsinchu (TW)]][[Category:Zhi-Chang Lin of Hsinchu (TW)]]

[[:Category:Shih-Cheng Chen of Hsinchu (TW)|Shih-Cheng Chen of Hsinchu (TW)]][[Category:Shih-Cheng Chen of Hsinchu (TW)]]

[[:Category:Tsung-Han Chuang of Hsinchu (TW)|Tsung-Han Chuang of Hsinchu (TW)]][[Category:Tsung-Han Chuang of Hsinchu (TW)]]

[[:Category:Kuo-Cheng Chiang of Hsinchu (TW)|Kuo-Cheng Chiang of Hsinchu (TW)]][[Category:Kuo-Cheng Chiang of Hsinchu (TW)]]

[[:Category:Chih-Hao Wang of Hsinchu (TW)|Chih-Hao Wang of Hsinchu (TW)]][[Category:Chih-Hao Wang of Hsinchu (TW)]]

==INTEGRATED CIRCUIT WITH BOTTOM DIELECTRIC INSULATORS AND FIN SIDEWALL SPACERS FOR REDUCING SOURCE/DRAIN LEAKAGE CURRENTS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17850811 titled 'INTEGRATED CIRCUIT WITH BOTTOM DIELECTRIC INSULATORS AND FIN SIDEWALL SPACERS FOR REDUCING SOURCE/DRAIN LEAKAGE CURRENTS

==Simplified Explanation==

The abstract describes an integrated circuit that includes a nanostructure transistor with semiconductor nanostructures and a source/drain region. The circuit also includes a fin sidewall spacer and a bottom isolation structure.

* The integrated circuit includes a nanostructure transistor with multiple semiconductor nanostructures and a source/drain region.
* A fin sidewall spacer is used to laterally bound a lower portion of the source/drain region.
* A bottom isolation structure is included to electrically isolate the source/drain region from the semiconductor substrate.

== Potential Applications ==
* This technology can be used in various electronic devices that require integrated circuits, such as smartphones, computers, and IoT devices.
* It can be applied in the development of advanced processors, memory chips, and other high-performance computing components.

== Problems Solved ==
* The integration of nanostructure transistors with semiconductor nanostructures helps to improve the performance and efficiency of integrated circuits.
* The use of a fin sidewall spacer and bottom isolation structure helps to enhance the electrical isolation and reduce leakage current in the circuit.

== Benefits ==
* The integrated circuit with nanostructure transistors provides improved performance and efficiency compared to traditional transistors.
* The use of fin sidewall spacers and bottom isolation structures helps to minimize electrical interference and leakage, leading to better overall circuit performance.


==Original Abstract Submitted==

An integrated circuit includes a nanostructure transistor including a plurality of first semiconductor nanostructures over a substrate and a source/drain region in contact with each of the semiconductor nanostructures. The integrated circuit includes a fin sidewall spacer laterally bounding a lower portion of the source/drain region. The integrated circuit also includes a bottom isolation structure electrically isolating the source/drain region from the semiconductor substrate.



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