View source for 17850778. INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE POWER STAPLE simplified abstract (Intel Corporation)

=INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE POWER STAPLE=


==Organization Name==

[[:Category:Intel Corporation|Intel Corporation]]


[[Category:Intel Corporation]]

==Inventor(s)==

[[:Category:Sukru Yemenicioglu of Portland OR (US)|Sukru Yemenicioglu of Portland OR (US)]][[Category:Sukru Yemenicioglu of Portland OR (US)]]

[[:Category:Xinning Wang of Portland OR (US)|Xinning Wang of Portland OR (US)]][[Category:Xinning Wang of Portland OR (US)]]

[[:Category:Nischal Arkali Radhakrishna of Hillsboro OR (US)|Nischal Arkali Radhakrishna of Hillsboro OR (US)]][[Category:Nischal Arkali Radhakrishna of Hillsboro OR (US)]]

[[:Category:Leonard P. Guler of Hillsboro OR (US)|Leonard P. Guler of Hillsboro OR (US)]][[Category:Leonard P. Guler of Hillsboro OR (US)]]

[[:Category:Mauro J. Kobrinsky of Portland OR (US)|Mauro J. Kobrinsky of Portland OR (US)]][[Category:Mauro J. Kobrinsky of Portland OR (US)]]

[[:Category:June Choi of Portland OR (US)|June Choi of Portland OR (US)]][[Category:June Choi of Portland OR (US)]]

[[:Category:Pratik Patel of Portland OR (US)|Pratik Patel of Portland OR (US)]][[Category:Pratik Patel of Portland OR (US)]]

[[:Category:Tahir Ghani of Portland OR (US)|Tahir Ghani of Portland OR (US)]][[Category:Tahir Ghani of Portland OR (US)]]

==INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE POWER STAPLE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17850778 titled 'INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE POWER STAPLE

==Simplified Explanation==

The patent application describes integrated circuit structures with a backside power staple. Here are the key points:

* The integrated circuit structure includes gate lines and trench contacts.
* The trench contacts are placed over the source or drain structures, alternating with the gate lines.
* A front-side metal routing layer extends over the gate lines and is connected to the trench contacts.
* A backside metal routing layer runs beneath the gate lines and trench contacts, parallel and overlapping with the front-side metal routing layer.
* A conductive feedthrough structure connects the backside metal routing layer to the front-side metal routing layer.

Potential applications of this technology:

* Integrated circuits in various electronic devices such as smartphones, computers, and IoT devices.
* Power management systems in electronic devices.
* High-performance computing systems.

Problems solved by this technology:

* Efficient power distribution within integrated circuits.
* Improved performance and reliability of integrated circuits.
* Enhanced power management capabilities.

Benefits of this technology:

* More efficient power delivery, reducing power losses and improving overall performance.
* Enhanced reliability and stability of integrated circuits.
* Improved power management capabilities, allowing for better control and optimization of power usage.


==Original Abstract Submitted==

Integrated circuit structures having backside power staple are described. In an example, an integrated circuit structure includes a plurality of gate lines. A plurality of trench contacts is extending over a plurality of source or drain structures, individual ones of the plurality of trench contacts alternating with individual ones of the plurality of gate lines. A front-side metal routing layer is extending over one or more of the plurality of gate lines, and over and coupled to one or more of the plurality of trench contacts. A backside metal routing layer is extending beneath the one or more of the plurality of gate lines and the one or more of the plurality of trench contacts, the backside metal routing layer parallel and overlapping with the front-side metal routing layer. A conductive feedthrough structure couples the backside metal routing layer to the front-side metal routing layer.



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