View source for 17816055. NOVEL METHOD OF FORMING WAFER-TO-WAFER BONDING STRUCTURE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

=NOVEL METHOD OF FORMING WAFER-TO-WAFER BONDING STRUCTURE=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Co., Ltd.|Taiwan Semiconductor Manufacturing Co., Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Co., Ltd.]]

==Inventor(s)==

[[:Category:Wen-Ting Lan of Hsinchu City (TW)|Wen-Ting Lan of Hsinchu City (TW)]][[Category:Wen-Ting Lan of Hsinchu City (TW)]]

[[:Category:I-Han Huang of New Taipei City (TW)|I-Han Huang of New Taipei City (TW)]][[Category:I-Han Huang of New Taipei City (TW)]]

[[:Category:Fu-Cheng Chang of Hsinchu City (TW)|Fu-Cheng Chang of Hsinchu City (TW)]][[Category:Fu-Cheng Chang of Hsinchu City (TW)]]

[[:Category:Lin-Yu Huang of Hsinchu (TW)|Lin-Yu Huang of Hsinchu (TW)]][[Category:Lin-Yu Huang of Hsinchu (TW)]]

[[:Category:Shi-Ning Ju of Hsinchu City (TW)|Shi-Ning Ju of Hsinchu City (TW)]][[Category:Shi-Ning Ju of Hsinchu City (TW)]]

[[:Category:Kuo-Cheng Chiang of Zhubei City (TW)|Kuo-Cheng Chiang of Zhubei City (TW)]][[Category:Kuo-Cheng Chiang of Zhubei City (TW)]]

==NOVEL METHOD OF FORMING WAFER-TO-WAFER BONDING STRUCTURE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17816055 titled 'NOVEL METHOD OF FORMING WAFER-TO-WAFER BONDING STRUCTURE

==Simplified Explanation==

The abstract describes a method of forming a semiconductor structure by bonding two wafers together, reducing the thickness of one wafer, and thinning the other wafer. Devices are then formed on both wafers, and an alignment process is performed to align the active regions of the two wafers. A via structure is formed to connect the devices on both sides of an insulation layer.

* The method involves bonding two wafers together using oxide bonding.
* The thickness of one wafer is reduced using ion implantation and separation.
* The other wafer is thinned using a removal process.
* Devices are formed on the first wafer, and a carrier is attached over it.
* An alignment process is performed from the bottom of the second wafer to align the active regions of both wafers.
* Devices are then formed in the active regions of the second wafer.
* A via structure is formed to connect the devices on both sides of the insulation layer.

Potential Applications:
* Semiconductor manufacturing
* Integrated circuit fabrication
* Microelectronics industry

Problems Solved:
* Allows for the formation of devices on two separate wafers and the connection of these devices through a via structure.
* Enables the alignment of active regions between the two wafers.

Benefits:
* Provides a method for creating complex semiconductor structures.
* Allows for the integration of devices from different wafers.
* Enables the formation of high-density integrated circuits.


==Original Abstract Submitted==

A method of forming a semiconductor structure is provided. Two wafers are first bonded by oxide bonding. Next, the thickness of a first wafer is reduced using an ion implantation and separation approach, and a second wafer is thinned by using a removal process. First devices are formed on the first wafer, and a carrier is then attached over the first wafer, and an alignment process is performed from the bottom of the second wafer to align active regions of the second wafer for placement of the second devices with active regions of the first wafer for placement of the first devices. The second devices are then formed in the active regions of the second wafer. Furthermore, a via structure is formed through the first wafer, the second wafer and the insulation layer therebetween to connect the first and second devices on the two sides of the insulation layer.



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