View source for 17781773. OXIDE THIN FILM TRANSISTOR AND PREPARATION METHOD THEREOF, AND DISPLAY DEVICE simplified abstract (BOE TECHNOLOGY GROUP CO., LTD.)

=OXIDE THIN FILM TRANSISTOR AND PREPARATION METHOD THEREOF, AND DISPLAY DEVICE=


==Organization Name==

[[:Category:BOE TECHNOLOGY GROUP CO., LTD.|BOE TECHNOLOGY GROUP CO., LTD.]]


[[Category:BOE TECHNOLOGY GROUP CO., LTD.]]

==Inventor(s)==

[[:Category:Lizhong Wang of Beijing (CN)|Lizhong Wang of Beijing (CN)]][[Category:Lizhong Wang of Beijing (CN)]]

[[:Category:Guangcai Yuan of Beijing (CN)|Guangcai Yuan of Beijing (CN)]][[Category:Guangcai Yuan of Beijing (CN)]]

[[:Category:Ce Ning of Beijing (CN)|Ce Ning of Beijing (CN)]][[Category:Ce Ning of Beijing (CN)]]

[[:Category:Nianqi Yao of Beijing (CN)|Nianqi Yao of Beijing (CN)]][[Category:Nianqi Yao of Beijing (CN)]]

[[:Category:Hehe Hu of Beijing (CN)|Hehe Hu of Beijing (CN)]][[Category:Hehe Hu of Beijing (CN)]]

[[:Category:Liping Lei of Beijing (CN)|Liping Lei of Beijing (CN)]][[Category:Liping Lei of Beijing (CN)]]

[[:Category:Dongfang Wang of Beijing (CN)|Dongfang Wang of Beijing (CN)]][[Category:Dongfang Wang of Beijing (CN)]]

[[:Category:Dapeng Xue of Beijing (CN)|Dapeng Xue of Beijing (CN)]][[Category:Dapeng Xue of Beijing (CN)]]

[[:Category:Shuilang Dong of Beijing (CN)|Shuilang Dong of Beijing (CN)]][[Category:Shuilang Dong of Beijing (CN)]]

[[:Category:Zhengliang Li of Beijing (CN)|Zhengliang Li of Beijing (CN)]][[Category:Zhengliang Li of Beijing (CN)]]

==OXIDE THIN FILM TRANSISTOR AND PREPARATION METHOD THEREOF, AND DISPLAY DEVICE - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17781773 titled 'OXIDE THIN FILM TRANSISTOR AND PREPARATION METHOD THEREOF, AND DISPLAY DEVICE

==Simplified Explanation==

The present disclosure describes an oxide thin film transistor with a unique insulating layer structure, as well as a display device and a method for preparing the transistor. The insulating layer is made of oxide material and consists of a first and a second insulating layer stacked on top of each other, with the second insulating layer having a higher density than the first one. The second insulating layer is located farther away from the base substrate compared to the first insulating layer.

* Oxide thin film transistor with unique insulating layer structure
* Insulating layer made of oxide material
* Consists of a first and a second insulating layer stacked on top of each other
* Second insulating layer has a higher density than the first one
* Second insulating layer is located farther away from the base substrate

== Potential Applications ==
This technology can be applied in:
* Display devices
* Thin film transistors for electronic devices

== Problems Solved ==
This technology addresses the following issues:
* Improving the performance and reliability of oxide thin film transistors
* Enhancing the functionality of display devices

== Benefits ==
The benefits of this technology include:
* Higher density insulating layer for improved performance
* Better reliability and stability of oxide thin film transistors
* Enhanced display quality and functionality

== Potential Commercial Applications ==
This technology has potential commercial applications in:
* Consumer electronics industry
* Display manufacturing companies

== Possible Prior Art ==
One possible prior art is the use of oxide thin film transistors in display devices, but the specific insulating layer structure described in this disclosure may be novel and inventive.

=== Unanswered Questions ===

=== How does this insulating layer structure improve the performance of the oxide thin film transistor? ===
The insulating layer structure with a higher density second layer may help in reducing leakage currents and improving the overall stability of the transistor.

=== What are the specific manufacturing processes involved in creating this unique insulating layer structure? ===
The patent application does not provide detailed information on the specific manufacturing processes involved in creating the insulating layer structure. Additional research or access to the full patent document may be needed to answer this question.


==Original Abstract Submitted==

At least one embodiment of the present disclosure provides an oxide thin film transistor, a display device, and a preparation method of the oxide thin film transistor, and the oxide thin film transistor includes a base substrate; an oxide semiconductor layer provided on the base substrate, and an insulating layer provided on a side of the oxide semiconductor layer away from the base substrate; in which the insulating layer is made of oxide; the insulating layer includes a first insulating layer and a second insulating layer which are stacked; a density of the second insulating layer is greater than a density of the first insulating layer; and the second insulating layer is farther away from the base substrate than the first insulating layer.



[[Category:H01L29/786]]
[[Category:H01L29/417]]
[[Category:H01L29/423]]
[[Category:H01L29/66]]