View source for 17670309. DETECTION USING SEMICONDUCTOR DETECTOR simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

=DETECTION USING SEMICONDUCTOR DETECTOR=


==Organization Name==

[[:Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.|TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]


[[Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]

==Inventor(s)==

[[:Category:Ya-Chin King of Taipei City (TW)|Ya-Chin King of Taipei City (TW)]][[Category:Ya-Chin King of Taipei City (TW)]]

[[:Category:Chrong Jung Lin of Hsinchu City (TW)|Chrong Jung Lin of Hsinchu City (TW)]][[Category:Chrong Jung Lin of Hsinchu City (TW)]]

[[:Category:Burn Jeng Lin of Hsinchu City (TW)|Burn Jeng Lin of Hsinchu City (TW)]][[Category:Burn Jeng Lin of Hsinchu City (TW)]]

[[:Category:Shi-Jiun Wang of Changhua City (TW)|Shi-Jiun Wang of Changhua City (TW)]][[Category:Shi-Jiun Wang of Changhua City (TW)]]

==DETECTION USING SEMICONDUCTOR DETECTOR - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17670309 titled 'DETECTION USING SEMICONDUCTOR DETECTOR

==Simplified Explanation==

The patent application describes a device that includes various structures and components for improved performance and functionality. Here is a simplified explanation of the abstract:

* The device consists of a semiconductor fin, an isolation structure, a gate structure, source/drain structures, a sensing contact, a sensing pad structure, and a reading contact.
* The semiconductor fin has a channel region and source/drain regions on opposite sides of the channel region.
* The isolation structure surrounds the semiconductor fin laterally.
* The gate structure is positioned over the channel region of the semiconductor fin.
* The source/drain structures are located over the respective source/drain regions of the semiconductor fin.
* The sensing contact is directly on the isolation structure and adjacent to the gate structure.
* The sensing pad structure is connected to the sensing contact.
* The reading contact is directly on the isolation structure and adjacent to the gate structure.

Potential Applications:

* This technology can be applied in the field of semiconductor devices and integrated circuits.
* It can be used in various electronic devices such as smartphones, tablets, computers, and other consumer electronics.
* The device can be utilized in sensors, memory devices, processors, and other electronic components.

Problems Solved:

* The device addresses the need for improved performance and functionality in semiconductor devices.
* It solves the problem of efficient sensing and reading of signals in electronic devices.
* The technology provides enhanced isolation and connectivity features.

Benefits:

* The device offers improved performance and functionality compared to existing semiconductor devices.
* It enables efficient sensing and reading of signals, enhancing the overall performance of electronic devices.
* The technology provides better isolation and connectivity, leading to enhanced reliability and durability of the device.


==Original Abstract Submitted==

A device includes a semiconductor fin, an isolation structure, a gate structure, source/drain structures, a sensing contact, a sensing pad structure, and a reading contact. The semiconductor fin includes a channel region and source/drain regions on opposite sides of the channel region. The isolation structure laterally surrounds the semiconductor fin. The gate structure is over the channel region of the semiconductor fin. The source/drain structures are respectively over the source/drain regions of the semiconductor fin. The sensing contact is directly on the isolation structure and adjacent to the gate structure. The sensing pad structure is connected to the sensing contact. The reading contact is directly on the isolation structure and adjacent to the gate structure.



[[Category:H01L31/119]]
[[Category:H01L31/0224]]