View source for 17667873. SEMICONDUCTOR MEMORY STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

=SEMICONDUCTOR MEMORY STRUCTURE AND METHOD FOR FORMING THE SAME=


==Organization Name==

[[:Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.|TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]


[[Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]

==Inventor(s)==

[[:Category:Chih-Hsuan Cheng of Hsinchu City (TW)|Chih-Hsuan Cheng of Hsinchu City (TW)]][[Category:Chih-Hsuan Cheng of Hsinchu City (TW)]]

[[:Category:Chieh-Fang Chen of Hsinchu County (TW)|Chieh-Fang Chen of Hsinchu County (TW)]][[Category:Chieh-Fang Chen of Hsinchu County (TW)]]

[[:Category:Sheng-Chen Wang of Hsinchu City (TW)|Sheng-Chen Wang of Hsinchu City (TW)]][[Category:Sheng-Chen Wang of Hsinchu City (TW)]]

[[:Category:Chieh-Yi Shen of Taipei (TW)|Chieh-Yi Shen of Taipei (TW)]][[Category:Chieh-Yi Shen of Taipei (TW)]]

[[:Category:Han-Jong Chia of Hsinchu City (TW)|Han-Jong Chia of Hsinchu City (TW)]][[Category:Han-Jong Chia of Hsinchu City (TW)]]

[[:Category:Feng-Ching Chu of Pingtung County (TW)|Feng-Ching Chu of Pingtung County (TW)]][[Category:Feng-Ching Chu of Pingtung County (TW)]]

[[:Category:Meng-Han Lin of Hsinchu (TW)|Meng-Han Lin of Hsinchu (TW)]][[Category:Meng-Han Lin of Hsinchu (TW)]]

[[:Category:Feng-Cheng Yang of Zhudong Township (TW)|Feng-Cheng Yang of Zhudong Township (TW)]][[Category:Feng-Cheng Yang of Zhudong Township (TW)]]

[[:Category:Yu-Ming Lin of Hsinchu City (TW)|Yu-Ming Lin of Hsinchu City (TW)]][[Category:Yu-Ming Lin of Hsinchu City (TW)]]

[[:Category:Chung-Te Lin of Tainan City (TW)|Chung-Te Lin of Tainan City (TW)]][[Category:Chung-Te Lin of Tainan City (TW)]]

==SEMICONDUCTOR MEMORY STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17667873 titled 'SEMICONDUCTOR MEMORY STRUCTURE AND METHOD FOR FORMING THE SAME

==Simplified Explanation==

The patent application describes a method for forming a semiconductor memory structure. Here are the key points:

* The method involves creating a stack on a substrate, consisting of alternating layers of first and second dielectric materials.
* First dielectric pillars are formed through the stack, and the stack is etched to create trenches that expose the sidewalls of the first dielectric pillars.
* The first dielectric pillars are then removed, creating through holes, and the second dielectric layers are removed to create gaps between the first dielectric layers.
* First conductive lines are formed in these gaps, completing the semiconductor memory structure.

Potential applications of this technology:

* This method can be used in the manufacturing of semiconductor memory devices, such as flash memory or DRAM (dynamic random-access memory) chips.
* It can also be applied to other types of semiconductor devices that require stacked structures, such as logic circuits or microprocessors.

Problems solved by this technology:

* The method provides a way to create vertical structures in a semiconductor memory device, allowing for higher density and increased storage capacity.
* It enables the formation of conductive lines in the gaps between dielectric layers, improving the electrical performance and functionality of the memory structure.

Benefits of this technology:

* The method allows for the efficient formation of through holes and gaps in the stack, simplifying the manufacturing process.
* It enables the creation of vertical structures with precise dimensions and alignment, leading to improved device performance and reliability.
* The resulting semiconductor memory structure has increased storage capacity and improved electrical characteristics, enhancing overall device functionality.


==Original Abstract Submitted==

A method for forming a semiconductor memory structure is provided. The method includes forming a stack over a substrate, and the stack includes first dielectric layers and second dielectric layers vertically alternately arranged. The method also includes forming first dielectric pillars through the stack, and etching the stack to form first trenches. Sidewalls of the first dielectric pillars are exposed from the first trenches. The method also includes removing the first dielectric pillars to form through holes, removing the second dielectric layers of the stack to form gaps between the first dielectric layers, and forming first conductive lines in the gaps.



[[Category:H01L27/11597]]
[[Category:H01L27/11587]]
[[Category:H01L23/48]]
[[Category:H01L23/528]]