View source for 17655645. Staggered Metal Mesh on Backside of Device Die and Method Forming Same simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

=Staggered Metal Mesh on Backside of Device Die and Method Forming Same=


==Organization Name==

[[:Category:Taiwan Semiconductor Manufacturing Co., Ltd.|Taiwan Semiconductor Manufacturing Co., Ltd.]]


[[Category:Taiwan Semiconductor Manufacturing Co., Ltd.]]

==Inventor(s)==

[[:Category:Tzu-Sung Huang of Tainan City (TW)|Tzu-Sung Huang of Tainan City (TW)]][[Category:Tzu-Sung Huang of Tainan City (TW)]]

[[:Category:Tsung-Hsien Chiang of Hsinchu (TW)|Tsung-Hsien Chiang of Hsinchu (TW)]][[Category:Tsung-Hsien Chiang of Hsinchu (TW)]]

[[:Category:Ming Hung Tseng of Toufen Township (TW)|Ming Hung Tseng of Toufen Township (TW)]][[Category:Ming Hung Tseng of Toufen Township (TW)]]

[[:Category:Hao-Yi Tsai of Hsinchu (TW)|Hao-Yi Tsai of Hsinchu (TW)]][[Category:Hao-Yi Tsai of Hsinchu (TW)]]

[[:Category:Yu-Hsiang Hu of Hsinchu (TW)|Yu-Hsiang Hu of Hsinchu (TW)]][[Category:Yu-Hsiang Hu of Hsinchu (TW)]]

[[:Category:Chih-Wei Lin of Zhubie City (TW)|Chih-Wei Lin of Zhubie City (TW)]][[Category:Chih-Wei Lin of Zhubie City (TW)]]

[[:Category:Lipu Kris Chuang of Hsinchu (TW)|Lipu Kris Chuang of Hsinchu (TW)]][[Category:Lipu Kris Chuang of Hsinchu (TW)]]

[[:Category:Wei Lun Tsai of Kaohsiung City (TW)|Wei Lun Tsai of Kaohsiung City (TW)]][[Category:Wei Lun Tsai of Kaohsiung City (TW)]]

[[:Category:Kai-Ming Chiang of Taichung City (TW)|Kai-Ming Chiang of Taichung City (TW)]][[Category:Kai-Ming Chiang of Taichung City (TW)]]

[[:Category:Ching Yao Lin of Hsin-bei City (TW)|Ching Yao Lin of Hsin-bei City (TW)]][[Category:Ching Yao Lin of Hsin-bei City (TW)]]

[[:Category:Chao-Wei Li of Hsinchu (TW)|Chao-Wei Li of Hsinchu (TW)]][[Category:Chao-Wei Li of Hsinchu (TW)]]

[[:Category:Ching-Hua Hsieh of Hsinchu (TW)|Ching-Hua Hsieh of Hsinchu (TW)]][[Category:Ching-Hua Hsieh of Hsinchu (TW)]]

==Staggered Metal Mesh on Backside of Device Die and Method Forming Same - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17655645 titled 'Staggered Metal Mesh on Backside of Device Die and Method Forming Same

==Simplified Explanation==

The patent application describes a method for manufacturing a device that includes metal meshes and dielectric layers. The method involves several steps, including forming the metal meshes and dielectric layers, attaching a device die, encapsulating the die, and forming redistribution lines to connect to the device die.

* Metal meshes and dielectric layers are formed in a staggered pattern.
* A device die is attached to the second dielectric layer, overlapping the metal meshes.
* The device die is encapsulated in an encapsulant.
* Redistribution lines are formed and electrically connected to the device die.

==Potential Applications==
This technology can be applied in various industries and fields, including:

* Electronics manufacturing
* Semiconductor industry
* Microelectronics
* Integrated circuit production

==Problems Solved==
The method described in the patent application addresses several challenges and problems, such as:

* Ensuring proper electrical connections between the device die and the redistribution lines.
* Providing a reliable and efficient encapsulation for the device die.
* Optimizing the layout and arrangement of metal meshes and dielectric layers for improved performance.

==Benefits==
The innovation presented in the patent application offers several benefits, including:

* Enhanced electrical connectivity and signal transmission.
* Improved reliability and durability of the device.
* Efficient encapsulation process for the device die.
* Potential for increased performance and functionality of the device.


==Original Abstract Submitted==

A method includes forming a first metal mesh over a carrier, forming a first dielectric layer over the first metal mesh, and forming a second metal mesh over the first dielectric layer. The first metal mesh and the second metal mesh are staggered. The method further includes forming a second dielectric layer over the second metal mesh, attaching a device die over the second dielectric layer, with the device die overlapping the first metal mesh and the second metal mesh, encapsulating the device die in an encapsulant, and forming redistribution lines over and electrically connecting to the device die.



[[Category:H01L21/48]]
[[Category:H01L23/498]]