View source for 17575397. MEMORY ARRAY CIRCUITS, MEMORY STRUCTURES, AND METHODS FOR FABRICATING A MEMORY ARRAY CIRCUIT simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

=MEMORY ARRAY CIRCUITS, MEMORY STRUCTURES, AND METHODS FOR FABRICATING A MEMORY ARRAY CIRCUIT=


==Organization Name==

[[:Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.|TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]


[[Category:TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.]]

==Inventor(s)==

[[:Category:Chun-Ying Lee of Hsinchu (TW)|Chun-Ying Lee of Hsinchu (TW)]][[Category:Chun-Ying Lee of Hsinchu (TW)]]

[[:Category:Chia-En Huang of Xinfeng Township (TW)|Chia-En Huang of Xinfeng Township (TW)]][[Category:Chia-En Huang of Xinfeng Township (TW)]]

[[:Category:Meng-Sheng Chang of Chu-bei City (TW)|Meng-Sheng Chang of Chu-bei City (TW)]][[Category:Meng-Sheng Chang of Chu-bei City (TW)]]

==MEMORY ARRAY CIRCUITS, MEMORY STRUCTURES, AND METHODS FOR FABRICATING A MEMORY ARRAY CIRCUIT - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17575397 titled 'MEMORY ARRAY CIRCUITS, MEMORY STRUCTURES, AND METHODS FOR FABRICATING A MEMORY ARRAY CIRCUIT

==Simplified Explanation==

The abstract describes a memory array circuit that includes a memory array and a set of dummy cells surrounding the memory array. The memory array has two sets of memory cells, one located in the inner area and the other along the edge. Each dummy cell consists of active regions and multiple gate structures.

* The memory array circuit includes a memory array and dummy cells.
* The memory array has two sets of memory cells, one in the inner area and the other along the edge.
* The dummy cells consist of active regions and multiple gate structures.

Potential Applications:

* This memory array circuit can be used in various electronic devices that require memory storage, such as computers, smartphones, and tablets.
* It can be applied in data centers and servers to enhance memory capacity and performance.

Problems Solved:

* The inclusion of dummy cells helps to improve the performance and reliability of the memory array circuit.
* The arrangement of memory cells in both the inner area and along the edge allows for efficient use of space and increased memory capacity.

Benefits:

* The memory array circuit provides increased memory capacity due to the inclusion of both inner and edge memory cells.
* The use of dummy cells improves the performance and reliability of the memory array circuit.
* This technology can lead to more efficient and compact memory arrays in electronic devices.


==Original Abstract Submitted==

A memory array circuit includes a memory array and a set of dummy cells surrounding the memory array. The first memory array includes a first set of memory cells located in an inner area of the memory array and a second set of memory cells located along an edge of the memory array. Each dummy cell includes one or more active regions and multiple gate structures over the one or more active regions.



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