View source for 17541401. DIELECTRIC FILL FOR TIGHT PITCH MRAM PILLAR ARRAY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)

=DIELECTRIC FILL FOR TIGHT PITCH MRAM PILLAR ARRAY=


==Organization Name==

[[:Category:INTERNATIONAL BUSINESS MACHINES CORPORATION|INTERNATIONAL BUSINESS MACHINES CORPORATION]]


[[Category:INTERNATIONAL BUSINESS MACHINES CORPORATION]]

==Inventor(s)==

[[:Category:Ashim Dutta of Clifton Park NY (US)|Ashim Dutta of Clifton Park NY (US)]][[Category:Ashim Dutta of Clifton Park NY (US)]]

[[:Category:Chih-Chao Yang of Glenmont NY (US)|Chih-Chao Yang of Glenmont NY (US)]][[Category:Chih-Chao Yang of Glenmont NY (US)]]

[[:Category:Theodorus E. Standaert of Clifton Park NY (US)|Theodorus E. Standaert of Clifton Park NY (US)]][[Category:Theodorus E. Standaert of Clifton Park NY (US)]]

[[:Category:Daniel Charles Edelstein of White Plains NY (US)|Daniel Charles Edelstein of White Plains NY (US)]][[Category:Daniel Charles Edelstein of White Plains NY (US)]]

==DIELECTRIC FILL FOR TIGHT PITCH MRAM PILLAR ARRAY - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17541401 titled 'DIELECTRIC FILL FOR TIGHT PITCH MRAM PILLAR ARRAY

==Simplified Explanation==

The patent application describes a semiconductor device that includes a bottom electrode contact, magnetoresistive random access memory (MRAM) pillars, an encapsulation layer section, and a dielectric. The MRAM pillars are constructed over the bottom electrode contact, and the encapsulation layer section is placed between a pair of the MRAM pillars to reduce the aspect ratio of the tight pitch gap between them. The dielectric fills the entire space within the encapsulation layer section. The MRAM pillars have a rectangular or cone-shaped configuration, while the encapsulation layer section has a U-shaped or V-shaped configuration.

* The semiconductor device includes a bottom electrode contact, MRAM pillars, an encapsulation layer section, and a dielectric.
* The MRAM pillars are constructed over the bottom electrode contact.
* The encapsulation layer section is placed between a pair of the MRAM pillars to reduce the aspect ratio of the tight pitch gap between them.
* The dielectric fills the entire space within the encapsulation layer section.
* The MRAM pillars have a rectangular or cone-shaped configuration.
* The encapsulation layer section has a U-shaped or V-shaped configuration.

==Potential Applications==
* Semiconductor industry
* Memory devices
* Electronics manufacturing

==Problems Solved==
* Reduces the aspect ratio of the tight pitch gap between MRAM pillars
* Provides a dielectric that fills the entire space within the encapsulation layer section

==Benefits==
* Improved performance and reliability of the semiconductor device
* Enables higher density memory devices
* Reduces the risk of electrical shorts or failures in the device.


==Original Abstract Submitted==

A semiconductor device includes a bottom electrode contact disposed over one or more of a plurality of conductive lines, magnetoresistive random access memory (MRAM) pillars constructed over the bottom electrode contact, an encapsulation layer section disposed between a pair of the MRAM pillars such that an aspect ratio of a tight pitch gap between the pair of the MRAM pillars is reduced, and a dielectric disposed within the encapsulation layer section, wherein the dielectric fills an entirety of a space defined within the encapsulation layer section. The MRAM pillars have a generally rectangular-shaped or cone-shaped configuration and the encapsulation layer section has a generally U-shaped or V-shaped configuration.



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