View source for 17524884. SELECTIVE DEPOSITION ON METALS USING POROUS LOW-K MATERIALS simplified abstract (International Business Machines Corporation)

=SELECTIVE DEPOSITION ON METALS USING POROUS LOW-K MATERIALS=


==Organization Name==

[[:Category:International Business Machines Corporation|International Business Machines Corporation]]


[[Category:International Business Machines Corporation]]

==Inventor(s)==

[[:Category:Krystelle Lionti of San Jose CA (US)|Krystelle Lionti of San Jose CA (US)]][[Category:Krystelle Lionti of San Jose CA (US)]]

[[:Category:Rudy J. Wojtecki of San Jose CA (US)|Rudy J. Wojtecki of San Jose CA (US)]][[Category:Rudy J. Wojtecki of San Jose CA (US)]]

[[:Category:Noel Arellano of Gilroy CA (US)|Noel Arellano of Gilroy CA (US)]][[Category:Noel Arellano of Gilroy CA (US)]]

[[:Category:Son Nguyen of Schenectady NY (US)|Son Nguyen of Schenectady NY (US)]][[Category:Son Nguyen of Schenectady NY (US)]]

[[:Category:Hosadurga Shobha of Niskayuna NY (US)|Hosadurga Shobha of Niskayuna NY (US)]][[Category:Hosadurga Shobha of Niskayuna NY (US)]]

[[:Category:Balasubramanian Pranatharthiharan of Santa Clara CA (US)|Balasubramanian Pranatharthiharan of Santa Clara CA (US)]][[Category:Balasubramanian Pranatharthiharan of Santa Clara CA (US)]]

==SELECTIVE DEPOSITION ON METALS USING POROUS LOW-K MATERIALS - A simplified explanation of the abstract==


This abstract first appeared for US patent application 17524884 titled 'SELECTIVE DEPOSITION ON METALS USING POROUS LOW-K MATERIALS

==Simplified Explanation==

The patent application describes a method for selectively depositing materials on metals using porous low-k materials. The method involves the following steps:

* Alternating layers of a porous dielectric material and a first conductive material are formed.
* A surface aligned monolayer (SAM) is formed over the first conductive material.
* Hydroxamic acid (HA) material is deposited over the porous dielectric material.
* An oxide material is grown over the first conductive material.
* The SAM is removed.
* A dielectric layer is deposited adjacent to the oxide material.
* The oxide material is replaced with a second conductive material to define a bottom electrode.

Potential applications of this technology:

* Semiconductor manufacturing
* Electronics industry
* Microelectronics fabrication

Problems solved by this technology:

* Selective deposition on metals
* Improved control over material deposition
* Enhanced performance of electronic devices

Benefits of this technology:

* Selective deposition allows for precise placement of materials on metals.
* The use of porous low-k materials improves the performance of electronic devices.
* The method provides better control and accuracy in the fabrication process.


==Original Abstract Submitted==

A method is presented for selective deposition on metals using porous low-k materials. The method includes forming alternating layers of a porous dielectric material and a first conductive material, forming a surface aligned monolayer (SAM) over the first conductive material, depositing hydroxamic acid (HA) material over the porous dielectric material, growing an oxide material over the first conductive material, removing the SAM, depositing a dielectric layer adjacent the oxide material, and replacing the oxide material with a second conductive material defining a bottom electrode.



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