SEARCH RESULTS for assignor:HASHEMI, MAJID M

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(X0) 15917089: MULTIPLE WORK FUNCTION NANOSHEET FIELD EFFECT TRANSISTOR USING SACRIFICIAL SILICON GERMANIUM GROWTH

(A1) 20190280107: MULTIPLE WORK FUNCTION NANOSHEET FIELD EFFECT TRANSISTOR USING SACRIFICIAL SILICON GERMANIUM GROWTH

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(X0) 14341434: FABRICATION OF PERFECTLY SYMMETRIC GATE-ALL-AROUND FET ON SUSPENDED NANOWIRE USING INTERFACE INTERACTION

(A1) 20160027870: FABRICATION OF PERFECTLY SYMMETRIC GATE-ALL-AROUND FET ON SUSPENDED NANOWIRE USING INTERFACE INTERACTION

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(B2) 10396152: FABRICATION OF PERFECTLY SYMMETRIC GATE-ALL-AROUND FET ON SUSPENDED NANOWIRE USING INTERFACE INTERACTION

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(X0) 15849088: THREE-DIMENSIONALLY STRETCHABLE SINGLE CRYSTALLINE SEMICONDUCTOR MEMBRANE

(A1) 20190186041: THREE-DIMENSIONALLY STRETCHABLE SINGLE CRYSTALLINE SEMICONDUCTOR MEMBRANE

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(X0) 16269607: FORMING A FIN USING DOUBLE TRENCH EPITAXY

(A1) 20190189784: FORMING A FIN USING DOUBLE TRENCH EPITAXY

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(X0) 15834380: FORMATION OF SELF-LIMITED INNER SPACER FOR GATE-ALL-AROUND NANOSHEET FET

(A1) 20190181224: FORMATION OF SELF-LIMITED INNER SPACER FOR GATE-ALL-AROUND NANOSHEET FET

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(X0) 15834721: FORMING STACKED TWIN III-V NANO-SHEETS USING ASPECT-RATIO TRAPPING TECHNIQUES

(A1) 20190181228: FORMING STACKED TWIN III-V NANO-SHEETS USING ASPECT-RATIO TRAPPING TECHNIQUES

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(X0) 15838963: HIGH DENSITY RESISTIVE RANDOM ACCESS MEMORY INTEGRATED ON COMPLEMENTARY METAL OXIDE SEMICONDUCTOR

(A1) 20190181338: HIGH DENSITY RESISTIVE RANDOM ACCESS MEMORY INTEGRATED ON COMPLEMENTARY METAL OXIDE SEMICONDUCTOR

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(B2) 10297749: HIGH DENSITY RESISTIVE RANDOM ACCESS MEMORY INTEGRATED ON COMPLEMENTARY METAL OXIDE SEMICONDUCTOR

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(X0) 16215027: VERTICAL TRANSPORT FETS HAVING A GRADIENT THRESHOLD VOLTAGE

(A1) 20190172922: VERTICAL TRANSPORT FETS HAVING A GRADIENT THRESHOLD VOLTAGE

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(X0) 15825678: STACKED FINFET EEPROM

(A1) 20190164980: STACKED FINFET EEPROM

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(B2) 10304844: STACKED FINFET EEPROM

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(X0) 15826654: SYNAPTIC CROSSBAR MEMORY ARRAY

(A1) 20190164597: SYNAPTIC CROSSBAR MEMORY ARRAY

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(X0) 15826999: RESISTIVE RANDOM ACCESS MEMORY WITH METAL FIN ELECTRODE

(A1) 20190165269: RESISTIVE RANDOM ACCESS MEMORY WITH METAL FIN ELECTRODE

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(X0) 15828152: LATERAL BIPOLAR JUNCTION TRANSISTOR WITH DUAL BASE REGION

(A1) 20190165150: LATERAL BIPOLAR JUNCTION TRANSISTOR WITH DUAL BASE REGION

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(X0) 15818377: SINGLE COLUMN COMPOUND SEMICONDUCTOR BIPOLAR JUNCTION TRANSISTOR FABRICATED ON III-V COMPOUND SEMICONDUCTOR SURFACE

(A1) 20190157416: SINGLE COLUMN COMPOUND SEMICONDUCTOR BIPOLAR JUNCTION TRANSISTOR FABRICATED ON III-V COMPOUND SEMICONDUCTOR SURFACE

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(X0) 15818438: SINGLE COLUMN COMPOUND SEMICONDUCTOR BIPOLAR JUNCTION TRANSISTOR WITH ALL-AROUND BASE

(A1) 20190157434: SINGLE COLUMN COMPOUND SEMICONDUCTOR BIPOLAR JUNCTION TRANSISTOR WITH ALL-AROUND BASE

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(X0) 15819398: VERTICAL FIELD EFFECT TRANSISTOR (VFET) PROGRAMMABLE COMPLEMENTARY METAL OXIDE SEMICONDUCTOR INVERTER

(A1) 20190157261: VERTICAL FIELD EFFECT TRANSISTOR (VFET) PROGRAMMABLE COMPLEMENTARY METAL OXIDE SEMICONDUCTOR INVERTER

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(X0) 15819567: STACKED INDIUM GALLIUM ARSENIDE NANOSHEETS ON SILICON WITH BOTTOM TRAPEZOID ISOLATION

(A1) 20190157386: STACKED INDIUM GALLIUM ARSENIDE NANOSHEETS ON SILICON WITH BOTTOM TRAPEZOID ISOLATION

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(X0) 15819622: III-V LATERAL BIPOLAR JUNCTION TRANSISTOR ON LOCAL FACETTED BURIED OXIDE LAYER

(A1) 20190157433: III-V LATERAL BIPOLAR JUNCTION TRANSISTOR ON LOCAL FACETTED BURIED OXIDE LAYER

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(X0) 15819708: FULL AIR-GAP SPACERS FOR GATE-ALL-AROUND NANOSHEET FIELD EFFECT TRANSISTORS

(A1) 20190157414: FULL AIR-GAP SPACERS FOR GATE-ALL-AROUND NANOSHEET FIELD EFFECT TRANSISTORS

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(X0) 15801967: VERTICALLY STACKED NFET AND PFET WITH DUAL WORK FUNCTION

(A1) 20190131394: VERTICALLY STACKED NFET AND PFET WITH DUAL WORK FUNCTION

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(X0) 15802021: VERTICALLY STACKED DUAL CHANNEL NANOSHEET DEVICES

(A1) 20190131395: VERTICALLY STACKED DUAL CHANNEL NANOSHEET DEVICES