SEARCH RESULTS for assignor:"ZHANG, YANLI"

Showing 1 to 8 of 8 results

Last Update Patent(s) Assignor(s) Orig. Assignee(s) Assignee(s) Reel/Frame
17-May-2018

(X0) 1: THREE-DIMENSIONAL MEMORY DEVICE HAVING SELECT GATE ELECTRODE THAT IS THICKER THAN WORD LINES AND METHOD OF MAKING THEREOF

(A1) 2: THREE-DIMENSIONAL MEMORY DEVICE HAVING SELECT GATE ELECTRODE THAT IS THICKER THAN WORD LINES AND METHOD OF MAKING THEREOF

SHIGEMURA, KEISUKE

ARIYOSHI, JUNICHI

TSUTSUMI, MASANORI

SANO, MICHIAKI

ZHANG, YANLI

MAKALA, RAGHUVEER S.

SANDISK TECHNOLOGIES LLC

42391/875

15-May-2018

(A1) 2: THREE-DIMENSIONAL MEMORY DEVICE HAVING A MULTILEVEL DRAIN SELECT GATE ELECTRODE AND METHOD OF MAKING THEREOF

(B2) 9: THREE-DIMENSIONAL MEMORY DEVICE HAVING A MULTILEVEL DRAIN SELECT GATE ELECTRODE AND METHOD OF MAKING THEREOF

(X0) 1: THREE-DIMENSIONAL MEMORY DEVICE HAVING A MULTILEVEL DRAIN SELECT GATE ELECTRODE AND METHOD OF MAKING THEREOF

(B1) 9: THREE-DIMENSIONAL MEMORY DEVICE HAVING A MULTILEVEL DRAIN SELECT GATE ELECTRODE AND METHOD OF MAKING THEREOF

ZHANG, YANLI

LIU, JIN

MAKALA, RAGHUVEER S.

CHOWDHURY, MURSHED

ALSMEIER, JOHANN

SANDISK TECHNOLOGIES LLC

40363/707

03-May-2018

(X0) 1: BULB-SHAPED MEMORY STACK STRUCTURES FOR DIRECT SOURCE CONTACT IN THREE-DIMENSIONAL MEMORY DEVICE

(A1) 2: BULB-SHAPED MEMORY STACK STRUCTURES FOR DIRECT SOURCE CONTACT IN THREE-DIMENSIONAL MEMORY DEVICE

YU, JIXIN

KITAMURA, KENTO

ZHANG, TONG

GE, CHUN

ZHANG, YANLI

SHIMIZU, SATOSHI

KASAGI, YASUO

OGAWA, HIROYUKI

MAO, DAXIN

YAMAGUCHI, KENSUKE

ALSMEIER, JOHANN

KAI, JAMES

SANDISK TECHNOLOGIES LLC

42764/622

03-May-2018

(X0) 1: NON-VOLATILE MEMORY WITH REDUCED PROGRAM SPEED VARIATION

(A1) 2: NON-VOLATILE MEMORY WITH REDUCED PROGRAM SPEED VARIATION

BARASKAR, ASHISH

PANG, LIANG

ZHANG, YANLI

MAKALA, RAGHUVEER

DONG, YINGDA

SANDISK TECHNOLOGIES LLC

44436/917

01-May-2018

(X0) 1: THREE-DIMENSIONAL MEMORY DEVICE WITH PARTIALLY DISCRETE CHARGE STORAGE REGIONS AND METHOD OF MAKING THEREOF

(B1) 9: THREE-DIMENSIONAL MEMORY DEVICE WITH PARTIALLY DISCRETE CHARGE STORAGE REGIONS AND METHOD OF MAKING THEREOF

ZHOU, FEI

MAKALA, RAGHUVEER

SHARANGPANI, RAHUL

SHUKLA, KEERTI

ZHANG, YANLI

ZHANG, PENG

SANDISK TECHNOLOGIES LLC

41755/131

05-Apr-2018

(X0) 1: THREE-DIMENSIONAL MEMORY DEVICE HAVING DRAIN SELECT LEVEL ISOLATION STRUCTURE AND METHOD OF MAKING THEREOF

(A1) 2: THREE-DIMENSIONAL MEMORY DEVICE HAVING DRAIN SELECT LEVEL ISOLATION STRUCTURE AND METHOD OF MAKING THEREOF

ZHANG, YANLI

ALSMEIER, JOHANN

MAKALA, RAGHUVEER

KANAKAMEDALA, SENAKA

SHARANGPANI, RAHUL

KAI, JAMES

SANDISK TECHNOLOGIES LLC

40383/464

06-Feb-2018

(X0) 1: THREE DIMENSIONAL NAND DEVICE HAVING DUMMY MEMORY HOLES AND METHOD OF MAKING THEREOF

(A1) 2: THREE DIMENSIONAL NAND DEVICE HAVING DUMMY MEMORY HOLES AND METHOD OF MAKING THEREOF

(B2) 9: THREE DIMENSIONAL NAND DEVICE HAVING DUMMY MEMORY HOLES AND METHOD OF MAKING THEREOF

ZHANG, YANLI

MAKALA, RAGHUVEER S.

ALSMEIER, JOHANN

LEE, YAO-SHENG

XU, TIGER

SANDISK TECHNOLOGIES INC.

37849/482

01-Feb-2018

(X0) 1: Non-Volatile Memory With Reduced Program Speed Variation

(A1) 2: Non-Volatile Memory With Reduced Program Speed Variation

BARASKAR, ASHISH

PANG, LIANG

ZHANG, YANLI

MAKALA, RAGHUVEER

DONG, YINGDA

SANDISK TECHNOLOGIES LLC

39282/130