SEARCH RESULTS for assignor:"YOUNG, BAO-RU"

Showing 1 to 11 of 11 results

Last Update Patent(s) Assignor(s) Orig. Assignee(s) Assignee(s) Reel/Frame
22-May-2018

(X0) 1: METHOD OF FORMING GATE STRUCTURE OF A SEMICONDUCTOR DEVICE

(A1) 2: METHOD OF FORMING GATE STRUCTURE OF A SEMICONDUCTOR DEVICE

(B2) 9: METHOD OF FORMING GATE STRUCTURE OF A SEMICONDUCTOR DEVICE

ZHU, MING

LIN, HUI-WEN

CHUANG, HARRY HAK-LAY

YOUNG, BAO-RU

HUANG, YUAN-SHENG

CHEN, RYAN CHIA-JEN

CHEN, CHAO-CHENG

CHING, KUO-CHENG

HSIEH, TING-HUA

DIAZ, CARLOS H.

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

41557/345

17-May-2018

(X0) 1: DUMMY FIN CELL PLACEMENT IN AN INTEGRATED CIRCUIT LAYOUT

(A1) 2: DUMMY FIN CELL PLACEMENT IN AN INTEGRATED CIRCUIT LAYOUT

HSIEH, TUNG-HENG

YOUNG, BAO-RU

CHANG, YU-JUNG

LEE, TZUNG-CHI

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

44485/912

15-May-2018

(X0) 1: Method for Fabricating a Semiconductor Device

(A1) 2: Method for Fabricating a Semiconductor Device

(B2) 9: Method for Fabricating a Semiconductor Device

CHUANG, HARRY-HAK-LAY

YOUNG, BAO-RU

WU, WEI CHENG

HSU, MENG-FANG

CHANG, KONG-PIN

LIANG, CHIA MING

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

30512/667

10-May-2018

(X0) 1: SYSTEM AND METHOD OF FABRICATING ESD FINFET WITH IMPROVED METAL LANDING IN THE DRAIN

(A1) 2: SYSTEM AND METHOD OF FABRICATING ESD FINFET WITH IMPROVED METAL LANDING IN THE DRAIN

LEE, TZUNG-CHI

HSIEH, TUNG-HENG

YOUNG, BAO-RU

CHANG, YUNG FENG

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

44547/776

27-Mar-2018

(X0) 1: POLYSILICON DESIGN FOR REPLACEMENT GATE TECHNOLOGY

(A1) 2: POLYSILICON DESIGN FOR REPLACEMENT GATE TECHNOLOGY

(B2) 9: POLYSILICON DESIGN FOR REPLACEMENT GATE TECHNOLOGY

CHUANG, HARRY-HAK-LAY

THEI, KONG-BENG

CHUNG, SHENG-CHEN

YEH, CHIUNG-HAN

TEO, LEE-WEE

HSU, YU-YING

YOUNG, BAO-RU

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

42678/924

06-Mar-2018

(X0) 1: SILICON RECESS ETCH AND EPITAXIAL DEPOSIT FOR SHALLOW TRENCH ISOLATION (STI)

(A1) 2: SILICON RECESS ETCH AND EPITAXIAL DEPOSIT FOR SHALLOW TRENCH ISOLATION (STI)

(B2) 9: SILICON RECESS ETCH AND EPITAXIAL DEPOSIT FOR SHALLOW TRENCH ISOLATION (STI)

CHUANG, HARRY-HAK-LAY

YOUNG, BAO-RU

WU, WEI CHENG

CHANG, KONG-PIN

LIANG, CHIA MING

HSU, MENG-FANG

FU, CHING-FENG

HUNG, SHIH-TING

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

40284/1

18-Jan-2018

(X0) 1: Self-Aligned Insulated Film For High-K Metal Gate Device

(A1) 2: Self-Aligned Insulated Film For High-K Metal Gate Device

NG, JIN-AUN

YOUNG, BAO-RU

CHUANG, HARRY-HAK-LAY

CHANG, MAXI

PENG, CHIH-TANG

YEH, CHIH-YANG

LIN, TA-WEI

LIN, HUAN-JUST

LIN, HUI-WEN

YANG, JEN-SHENG

JENG, PEI-REN

KAO, JUNG-HUI

LO, SHIH-HAO

TU, YUAN-TIEN

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

43718/758

09-Jan-2018

(X0) 1: DEVICE AND METHODS FOR HIGH-K AND METAL GATE SLACKS

(A1) 2: DEVICE AND METHODS FOR HIGH-K AND METAL GATE SLACKS

(B2) 9: DEVICE AND METHODS FOR HIGH-K AND METAL GATE SLACKS

CHEN, PO-NIEN

NG, JIN-AUN

YOUNG, BAO-RU

CHUANG, HARRY-HAK-LAY

ZHU, MING

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD

37333/403

09-Jan-2018

(X0) 1: SYSTEM AND METHOD OF FABRICATING ESD FINFET WITH IMPROVED METAL LANDING IN THE DRAIN

(B1) 9: SYSTEM AND METHOD OF FABRICATING ESD FINFET WITH IMPROVED METAL LANDING IN THE DRAIN

LEE, TZUNG-CHI

HSIEH, TUNG-HENG

YOUNG, BAO-RU

CHANG, YUNG FENG

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

40538/1

04-Jan-2018

(X0) 1: DUMMY FIN CELL PLACEMENT IN AN INTEGRATED CIRCUIT LAYOUT

(A1) 2: DUMMY FIN CELL PLACEMENT IN AN INTEGRATED CIRCUIT LAYOUT

HSIEH, TUNG-HENG

YOUNG, BAO-RU

CHANG, YU-JUNG

LEE, TZUNG-CHI

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

39315/161

02-Jan-2018

(X0) 1: Semiconductor Device and Manufacturing Method Thereof

(B1) 9: Semiconductor Device and Manufacturing Method Thereof

WANG, SHENG-HSIUNG

YOUNG, BAO-RU

HSIEH, TUNG-HENG

TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

41453/139