SEARCH RESULTS for assignor:"YEH, CHUN-CHEN"

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(X0) 15250166: PUNCH THROUGH STOPPER IN BULK FINFET DEVICE

(A1) 20160365432: PUNCH THROUGH STOPPER IN BULK FINFET DEVICE

(B2) 1: PUNCH THROUGH STOPPER IN BULK FINFET DEVICE

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(X0) 15458457: VERTICAL FIELD-EFFECT TRANSISTORS WITH CONTROLLED DIMENSIONS

(A1) 20180269312: VERTICAL FIELD-EFFECT TRANSISTORS WITH CONTROLLED DIMENSIONS

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(X0) 15635709: METAL-INSULATOR-METAL CAPACITOR ANALOG MEMORY UNIT CELL

(B1) 1: METAL-INSULATOR-METAL CAPACITOR ANALOG MEMORY UNIT CELL

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(X0) 15439575: FABRICATION OF VERTICAL FIELD EFFECT TRANSISTOR STRUCTURE WITH CONTROLLED GATE LENGTH

(A1) 20170288039: FABRICATION OF VERTICAL FIELD EFFECT TRANSISTOR STRUCTURE WITH CONTROLLED GATE LENGTH

(B2) 1: FABRICATION OF VERTICAL FIELD EFFECT TRANSISTOR STRUCTURE WITH CONTROLLED GATE LENGTH

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(X0) 15957212: COMPOSITE SPACER ENABLING UNIFORM DOPING IN RECESSED FIN DEVICES

(A1) 20180248017: COMPOSITE SPACER ENABLING UNIFORM DOPING IN RECESSED FIN DEVICES

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(X0) 15438114: Techniques for VFET Top Source/Drain Epitaxy

(A1) 20180240873: Techniques for VFET Top Source/Drain Epitaxy

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(X0) 15889654: METHODS OF FORMING VERTICAL TRANSISTOR DEVICES WITH DIFFERENT EFFECTIVE GATE LENGTHS AND THE RESULTING DEVICES

(A1) 20180240715: METHODS OF FORMING VERTICAL TRANSISTOR DEVICES WITH DIFFERENT EFFECTIVE GATE LENGTHS AND THE RESULTING DEVICES

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(X0) 15954300: Low Resistance Source Drain Contact Formation

(A1) 20180240875: Low Resistance Source Drain Contact Formation

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(X0) 15285035: COMPOSITE SPACER ENABLING UNIFORM DOPING IN RECESSED FIN DEVICES

(A1) 20170062584: COMPOSITE SPACER ENABLING UNIFORM DOPING IN RECESSED FIN DEVICES

(B2) 1: COMPOSITE SPACER ENABLING UNIFORM DOPING IN RECESSED FIN DEVICES

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(X0) 15068958: IMPLANTATION FORMED METAL-INSULATOR-SEMICONDUCTOR (MIS) CONTACTS

(A1) 20160211342: IMPLANTATION FORMED METAL-INSULATOR-SEMICONDUCTOR (MIS) CONTACTS

(B2) 9: IMPLANTATION FORMED METAL-INSULATOR-SEMICONDUCTOR (MIS) CONTACTS

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(X0) 15212972: NON-LITHOGRAPHIC LINE PATTERN FORMATION

(A1) 20160329214: NON-LITHOGRAPHIC LINE PATTERN FORMATION

(B2) 9: NON-LITHOGRAPHIC LINE PATTERN FORMATION

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(X0) 15240554: DUAL LINER SILICIDE

(A1) 20160372332: DUAL LINER SILICIDE

(B2) 9: DUAL LINER SILICIDE

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(X0) 15292768: FinFETs with Non-Merged Epitaxial S/D Extensions having a SiGe Seed Layer on Insulator

(A1) 20170033104: FinFETs with Non-Merged Epitaxial S/D Extensions having a SiGe Seed Layer on Insulator

(B2) 9: FinFETs with Non-Merged Epitaxial S/D Extensions having a SiGe Seed Layer on Insulator

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(X0) 14661590: FinFETs with Non-Merged Epitaxial S/D Extensions on a Seed Layer and having Flat Top Surfaces

(A1) 20150206877: FinFETs with Non-Merged Epitaxial S/D Extensions on a Seed Layer and having Flat Top Surfaces

(B2) 9: FinFETs with Non-Merged Epitaxial S/D Extensions on a Seed Layer and having Flat Top Surfaces

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(X0) 15068973: IMPLANTATION FORMED METAL-INSULATOR-SEMICONDUCTOR (MIS) CONTACTS

(A1) 20160211343: IMPLANTATION FORMED METAL-INSULATOR-SEMICONDUCTOR (MIS) CONTACTS

(B2) 9: IMPLANTATION FORMED METAL-INSULATOR-SEMICONDUCTOR (MIS) CONTACTS

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(X0) 15092039: ANCHORED STRESS-GENERATING ACTIVE SEMICONDUCTOR REGIONS FOR SEMICONDUCTOR-ON-INSULATOR FINFET

(A1) 20160218198: ANCHORED STRESS-GENERATING ACTIVE SEMICONDUCTOR REGIONS FOR SEMICONDUCTOR-ON-INSULATOR FINFET

(B2) 9: ANCHORED STRESS-GENERATING ACTIVE SEMICONDUCTOR REGIONS FOR SEMICONDUCTOR-ON-INSULATOR FINFET

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(X0) 15361790: SPACERS FOR TIGHT GATE PITCHES IN FIELD EFFECT TRANSISTORS

(A1) 20180151689: SPACERS FOR TIGHT GATE PITCHES IN FIELD EFFECT TRANSISTORS

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(X0) 14581135: FINFET SEMICONDUCTOR DEVICE HAVING INTEGRATED SIGE FIN

(A1) 20150287614: FINFET SEMICONDUCTOR DEVICE HAVING INTEGRATED SIGE FIN

(B2) 9: FINFET SEMICONDUCTOR DEVICE HAVING INTEGRATED SIGE FIN

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(X0) 15208186: HIGH THERMAL BUDGET COMPATIBLE PUNCH THROUGH STOP INTEGRATION USING DOPED GLASS

(A1) 20170062566: HIGH THERMAL BUDGET COMPATIBLE PUNCH THROUGH STOP INTEGRATION USING DOPED GLASS

(B2) 9: HIGH THERMAL BUDGET COMPATIBLE PUNCH THROUGH STOP INTEGRATION USING DOPED GLASS

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(X0) 15338603: SALICIDE FORMATION ON REPLACEMENT METAL GATE FINFET DEVICES

(A1) 20170047250: SALICIDE FORMATION ON REPLACEMENT METAL GATE FINFET DEVICES

(B2) 9: SALICIDE FORMATION ON REPLACEMENT METAL GATE FINFET DEVICES