SEARCH RESULTS for assignor:"YAMASHITA, TENKO"

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(X0) 15478299: METHOD TO IMPROVE FINFET CUT OVERLAY

(A1) 20170207097: METHOD TO IMPROVE FINFET CUT OVERLAY

(B2) 1: METHOD TO IMPROVE FINFET CUT OVERLAY

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(X0) 15986031: UNMERGED EPITAXIAL PROCESS FOR FINFET DEVICES WITH AGGRESSIVE FIN PITCH SCALING

(A1) 20180277648: UNMERGED EPITAXIAL PROCESS FOR FINFET DEVICES WITH AGGRESSIVE FIN PITCH SCALING

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(X0) 15466358: CONTACT FORMATION IN SEMICONDUCTOR DEVICES

(A1) 20180277541: CONTACT FORMATION IN SEMICONDUCTOR DEVICES

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(X0) 15250166: PUNCH THROUGH STOPPER IN BULK FINFET DEVICE

(A1) 20160365432: PUNCH THROUGH STOPPER IN BULK FINFET DEVICE

(B2) 1: PUNCH THROUGH STOPPER IN BULK FINFET DEVICE

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(X0) 15688224: METHOD AND STRUCTURE FOR IMPROVING FINFET WITH EPITAXY SOURCE/DRAIN

(A1) 20170358643: METHOD AND STRUCTURE FOR IMPROVING FINFET WITH EPITAXY SOURCE/DRAIN

(B2) 1: METHOD AND STRUCTURE FOR IMPROVING FINFET WITH EPITAXY SOURCE/DRAIN

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(X0) 15458457: VERTICAL FIELD-EFFECT TRANSISTORS WITH CONTROLLED DIMENSIONS

(A1) 20180269312: VERTICAL FIELD-EFFECT TRANSISTORS WITH CONTROLLED DIMENSIONS

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(B2) 1: FORMING A COMBINATION OF LONG CHANNEL DEVICES AND VERTICAL TRANSPORT FIN FIELD EFFECT TRANSISTORS ON THE SAME SUBSTRATE

(X0) 15462175: FORMING A COMBINATION OF LONG CHANNEL DEVICES AND VERTICAL TRANSPORT FIN FIELD EFFECT TRANSISTORS ON THE SAME SUBSTRATE

(A1) 20180269320: FORMING A COMBINATION OF LONG CHANNEL DEVICES AND VERTICAL TRANSPORT FIN FIELD EFFECT TRANSISTORS ON THE SAME SUBSTRATE

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(X0) 15259096: FINFET DEVICES WITH MULTIPLE CHANNEL LENGTHS

(A1) 20160379890: FINFET DEVICES WITH MULTIPLE CHANNEL LENGTHS

(B2) 1: FINFET DEVICES WITH MULTIPLE CHANNEL LENGTHS

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(X0) 15439575: FABRICATION OF VERTICAL FIELD EFFECT TRANSISTOR STRUCTURE WITH CONTROLLED GATE LENGTH

(A1) 20170288039: FABRICATION OF VERTICAL FIELD EFFECT TRANSISTOR STRUCTURE WITH CONTROLLED GATE LENGTH

(B2) 1: FABRICATION OF VERTICAL FIELD EFFECT TRANSISTOR STRUCTURE WITH CONTROLLED GATE LENGTH

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(X0) 15455659: LOW RESISTANCE SOURCE/DRAIN CONTACTS FOR COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) DEVICES

(A1) 20180261597: LOW RESISTANCE SOURCE/DRAIN CONTACTS FOR COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) DEVICES

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(X0) 15914096: LOW RESISTANCE SOURCE/DRAIN CONTACTS FOR COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) DEVICES

(A1) 20180261598: LOW RESISTANCE SOURCE/DRAIN CONTACTS FOR COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) DEVICES

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(X0) 15977437: AIR GAP SPACER FORMATION FOR NANO-SCALE SEMICONDUCTOR DEVICES

(A1) 20180261494: AIR GAP SPACER FORMATION FOR NANO-SCALE SEMICONDUCTOR DEVICES

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(X0) 15267193: FINFET DEVICES WITH MULTIPLE CHANNEL LENGTHS

(A1) 20170005114: FINFET DEVICES WITH MULTIPLE CHANNEL LENGTHS

(B2) 1: FINFET DEVICES WITH MULTIPLE CHANNEL LENGTHS

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(X0) 15276372: Width Adjustment of Stacked Nanowires

(A1) 20180090624: Width Adjustment of Stacked Nanowires

(B2) 1: Width Adjustment of Stacked Nanowires

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(X0) 15441941: INDEPENDENT GATE FINFET WITH BACKSIDE GATE CONTACT

(A1) 20180248041: INDEPENDENT GATE FINFET WITH BACKSIDE GATE CONTACT

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(X0) 15874308: INDEPENDENT GATE FINFET WITH BACKSIDE GATE CONTACT

(A1) 20180248042: INDEPENDENT GATE FINFET WITH BACKSIDE GATE CONTACT

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(X0) 15957212: COMPOSITE SPACER ENABLING UNIFORM DOPING IN RECESSED FIN DEVICES

(A1) 20180248017: COMPOSITE SPACER ENABLING UNIFORM DOPING IN RECESSED FIN DEVICES

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(X0) 15438114: Techniques for VFET Top Source/Drain Epitaxy

(A1) 20180240873: Techniques for VFET Top Source/Drain Epitaxy

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(X0) 15889654: METHODS OF FORMING VERTICAL TRANSISTOR DEVICES WITH DIFFERENT EFFECTIVE GATE LENGTHS AND THE RESULTING DEVICES

(A1) 20180240715: METHODS OF FORMING VERTICAL TRANSISTOR DEVICES WITH DIFFERENT EFFECTIVE GATE LENGTHS AND THE RESULTING DEVICES

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(X0) 14920354: UNMERGED EPITAXIAL PROCESS FOR FINFET DEVICES WITH AGGRESSIVE FIN PITCH SCALING

(A1) 20170117274: UNMERGED EPITAXIAL PROCESS FOR FINFET DEVICES WITH AGGRESSIVE FIN PITCH SCALING

(B2) 1: UNMERGED EPITAXIAL PROCESS FOR FINFET DEVICES WITH AGGRESSIVE FIN PITCH SCALING