SEARCH RESULTS for assignor:"SUNG, MIN GYU"

Showing 1 to 20 of 24 results

Last Update Patent(s) Assignor(s) Orig. Assignee(s) Assignee(s) Reel/Frame
14-Jun-2018

(X0) 1: AIR-GAP SPACERS FOR FIELD-EFFECT TRANSISTORS

(A1) 2: AIR-GAP SPACERS FOR FIELD-EFFECT TRANSISTORS

PARK, CHANRO

SUNG, MIN GYU

KIM, HOON

XIE, RUILONG

GLOBALFOUNDRIES INC.

40721/32

22-May-2018

(X0) 1: FIN PATTERNING FOR A FIN-TYPE FIELD-EFFECT TRANSISTOR

(A1) 2: FIN PATTERNING FOR A FIN-TYPE FIELD-EFFECT TRANSISTOR

(B2) 9: FIN PATTERNING FOR A FIN-TYPE FIELD-EFFECT TRANSISTOR

XIE, RUILONG

SUNG, MIN GYU

CAVE, NIGEL G.

LIEBMANN, LARS

GLOBALFOUNDRIES INC.

39817/591

17-May-2018

(A1) 2: TRANSISTOR-BASED SEMICONDUCTOR DEVICE WITH AIR-GAP SPACERS AND GATE CONTACT OVER ACTIVE AREA

(X0) 1: TRANSISTOR-BASED SEMICONDUCTOR DEVICE WITH AIR-GAP SPACERS AND GATE CONTACT OVER ACTIVE AREA

XIE, RUILONG

SUNG, MIN GYU

PARK, CHANRO

LIEBMANN, LARS WOLFGANG

KIM, HOON

GLOBALFOUNDRIES INC.

40327/668

10-May-2018

(X0) 1: SELF-ALIGNED CONTACT PROTECTION USING REINFORCED GATE CAP AND SPACER PORTIONS

(A1) 2: SELF-ALIGNED CONTACT PROTECTION USING REINFORCED GATE CAP AND SPACER PORTIONS

XIE, RUILONG

SUNG, MIN GYU

PARK, CHANRO

KIM, HOON

GLOBALFOUNDRIES INC.

40245/29

10-May-2018

(X0) 1: METHODS OF FORMING GATE ELECTRODES ON A VERTICAL TRANSISTOR DEVICE

(A1) 2: METHODS OF FORMING GATE ELECTRODES ON A VERTICAL TRANSISTOR DEVICE

(B2) 9: METHODS OF FORMING GATE ELECTRODES ON A VERTICAL TRANSISTOR DEVICE

PARK, CHANRO

BENTLEY, STEVEN

KIM, HOON

XIE, RUILONG

SUNG, MIN GYU

GLOBALFOUNDRIES INC.

40576/238

03-May-2018

(X0) 1: METHODS OF FORMING A GATE CONTACT FOR A TRANSISTOR ABOVE THE ACTIVE REGION AND AN AIR GAP ADJACENT THE GATE OF THE TRANSISTOR

(A1) 2: METHODS OF FORMING A GATE CONTACT FOR A TRANSISTOR ABOVE THE ACTIVE REGION AND AN AIR GAP ADJACENT THE GATE OF THE TRANSISTOR

PARK, CHANRO

XIE, RUILONG

KIM, HOON

SUNG, MIN GYU

GLOBALFOUNDRIES INC.

40159/500

03-May-2018

(X0) 1: HARD MASK LAYER TO REDUCE LOSS OF ISOLATION MATERIAL DURING DUMMY GATE REMOVAL

(A1) 2: HARD MASK LAYER TO REDUCE LOSS OF ISOLATION MATERIAL DURING DUMMY GATE REMOVAL

XIE, RUILONG

SUNG, MIN GYU

PARK, CHANRO

KIM, HOON

GLOBALFOUNDRIES INC.

40178/363

03-May-2018

(X0) 1: METHODS OF FORMING TRANSISTOR DEVICES WITH DIFFERENT THRESHOLD VOLTAGES AND THE RESULTING DEVICES

(A1) 2: METHODS OF FORMING TRANSISTOR DEVICES WITH DIFFERENT THRESHOLD VOLTAGES AND THE RESULTING DEVICES

KIM, HOON

SUNG, MIN GYU

XIE, RUILONG

PARK, CHANRO

GLOBALFOUNDRIES INC.

44906/489

17-Apr-2018

(X0) 1: METHODS OF FORMING NANOSHEET TRANSISTOR WITH DIELECTRIC ISOLATION OF SOURCE-DRAIN REGIONS AND RELATED STRUCTURE

(B1) 9: METHODS OF FORMING NANOSHEET TRANSISTOR WITH DIELECTRIC ISOLATION OF SOURCE-DRAIN REGIONS AND RELATED STRUCTURE

FROUGIER, JULIEN

SUNG, MIN GYU

XIE, RUILONG

PARK, CHANRO

BENTLEY, STEVEN

GLOBALFOUNDRIES INC.

43078/28

12-Apr-2018

(X0) 1: INTEGRATED CIRCUIT PRODUCTS THAT INCLUDE FINFET DEVICES AND A PROTECTION LAYER FORMED ON AN ISOLATION REGION

(A1) 2: INTEGRATED CIRCUIT PRODUCTS THAT INCLUDE FINFET DEVICES AND A PROTECTION LAYER FORMED ON AN ISOLATION REGION

XIE, RUILONG

PRINDLE, CHRISTOPHER M.

SUNG, MIN GYU

LEE, TEK PO RINUS

GLOBALFOUNDRIES INC.

44314/981

05-Apr-2018

(X0) 1: PREVENTING OXIDATION DEFECTS IN STRAIN-RELAXED FINS BY REDUCING LOCAL GAP FILL VOIDS

(A1) 2: PREVENTING OXIDATION DEFECTS IN STRAIN-RELAXED FINS BY REDUCING LOCAL GAP FILL VOIDS

SUNG, MIN GYU

KIM, HOON

PARK, CHANRO

XIE, RUILONG

GLOBALFOUNDRIES INC.

39925/145

05-Apr-2018

(X0) 1: COMPOSITE ISOLATION STRUCTURES FOR A FIN-TYPE FIELD EFFECT TRANSISTOR

(A1) 2: COMPOSITE ISOLATION STRUCTURES FOR A FIN-TYPE FIELD EFFECT TRANSISTOR

SUNG, MIN GYU

XIE, RUILONG

PARK, CHANRO

AKARVARDAR, MURAT KEREM

GLOBALFOUNDRIES INC.

43438/573

06-Mar-2018

(X0) 1: FIN CUT WITH ALTERNATING TWO COLOR FIN HARDMASK

(B1) 9: FIN CUT WITH ALTERNATING TWO COLOR FIN HARDMASK

XIE, RUILONG

KIM, HOON

LABELLE, CATHERINE B.

LIEBMANN, LARS W.

PARK, CHANRO

SUNG, MIN GYU

GLOBALFOUNDRIES INC.

39998/238

01-Mar-2018

(X0) 1: METHODS, APPARATUS AND SYSTEM FOR STI RECESS CONTROL FOR HIGHLY SCALED FINFET DEVICES

(A1) 2: METHODS, APPARATUS AND SYSTEM FOR STI RECESS CONTROL FOR HIGHLY SCALED FINFET DEVICES

SUNG, MIN GYU

PARK, CHANRO

KIM, HOON

XIE, RUILONG

LIM, KWAN-YONG

GLOBALFOUNDRIES INC.

44010/953

20-Feb-2018

(X0) 1: METHODS OF FORMING A GATE CONTACT FOR A SEMICONDUCTOR DEVICE ABOVE THE ACTIVE REGION

(B1) 9: METHODS OF FORMING A GATE CONTACT FOR A SEMICONDUCTOR DEVICE ABOVE THE ACTIVE REGION

PARK, CHANRO

XIE, RUILONG

SUNG, MIN GYU

KIM, HOON

GLOBALFOUNDRIES INC.

40960/690

15-Feb-2018

(X0) 1: METHOD TO TUNE CONTACT CD AND REDUCE MASK COUNT BY TILTED ION BEAM

(A1) 2: METHOD TO TUNE CONTACT CD AND REDUCE MASK COUNT BY TILTED ION BEAM

PARK, CHANRO

KIM, HOON

SUNG, MIN GYU

XIE, RUILONG

GLOBALFOUNDRIES INC.

39396/942

01-Feb-2018

(X0) 1: METHODS OF FORMING IC PRODUCTS COMPRISING A NANO-SHEET DEVICE AND A TRANSISTOR DEVICE

(A1) 2: METHODS OF FORMING IC PRODUCTS COMPRISING A NANO-SHEET DEVICE AND A TRANSISTOR DEVICE

XIE, RUILONG

PARK, CHANRO

SUNG, MIN GYU

KIM, HOON

GLOBALFOUNDRIES INC.

39255/411

01-Feb-2018

(X0) 1: METHODS OF FORMING AN AIR-GAP SPACER ON A SEMICONDUCTOR DEVICE AND THE RESULTING DEVICE

(A1) 2: METHODS OF FORMING AN AIR-GAP SPACER ON A SEMICONDUCTOR DEVICE AND THE RESULTING DEVICE

XIE, RUILONG

KIM, HOON

SUNG, MIN GYU

PARK, CHANRO

GLOBALFOUNDRIES INC.

39305/263

23-Jan-2018

(X0) 1: METHODS FOR FORMING TRANSISTOR DEVICES WITH DIFFERENT THRESHOLD VOLTAGES AND THE RESULTING DEVICES

(A1) 2: METHODS FOR FORMING TRANSISTOR DEVICES WITH DIFFERENT THRESHOLD VOLTAGES AND THE RESULTING DEVICES

(B2) 9: METHODS FOR FORMING TRANSISTOR DEVICES WITH DIFFERENT THRESHOLD VOLTAGES AND THE RESULTING DEVICES

KIM, HOON

SUNG, MIN GYU

XIE, RUILONG

PARK, CHANRO

GLOBALFOUNDRIES INC.

36307/649

23-Jan-2018

(X0) 1: FINFET DEVICES HAVING FINS WITH A TAPERED CONFIGURATION AND METHODS OF FABRICATING THE SAME

(A1) 2: FINFET DEVICES HAVING FINS WITH A TAPERED CONFIGURATION AND METHODS OF FABRICATING THE SAME

(B2) 9: FINFET DEVICES HAVING FINS WITH A TAPERED CONFIGURATION AND METHODS OF FABRICATING THE SAME

SUNG, MIN GYU

XIE, RUILONG

LABELLE, CATHERINE B.

GLOBALFOUNDRIES, INC.

36858/197