SEARCH RESULTS for assignor:"SUNG, MIN GYU"

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(X0) 15470205: GATE CUTS AFTER METAL GATE FORMATION

(B1) 1: GATE CUTS AFTER METAL GATE FORMATION

(A1) 20180277645: GATE CUTS AFTER METAL GATE FORMATION

(B2) 1: GATE CUTS AFTER METAL GATE FORMATION

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(X0) 15455203: FIN-TYPE FIELD EFFECT TRANSISTORS (FINFETS) WITH REPLACEMENT METAL GATES AND METHODS

(A1) 20180261514: FIN-TYPE FIELD EFFECT TRANSISTORS (FINFETS) WITH REPLACEMENT METAL GATES AND METHODS

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(X0) 15376831: AIR-GAP SPACERS FOR FIELD-EFFECT TRANSISTORS

(A1) 20180166319: AIR-GAP SPACERS FOR FIELD-EFFECT TRANSISTORS

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(X0) 15443335: DUAL MANDRELS TO ENABLE VARIABLE FIN PITCH

(B1) 9: DUAL MANDRELS TO ENABLE VARIABLE FIN PITCH

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(X0) 15271511: FIN PATTERNING FOR A FIN-TYPE FIELD-EFFECT TRANSISTOR

(A1) 20180082852: FIN PATTERNING FOR A FIN-TYPE FIELD-EFFECT TRANSISTOR

(B2) 9: FIN PATTERNING FOR A FIN-TYPE FIELD-EFFECT TRANSISTOR

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(A1) 20180138279: TRANSISTOR-BASED SEMICONDUCTOR DEVICE WITH AIR-GAP SPACERS AND GATE CONTACT OVER ACTIVE AREA

(X0) 15351893: TRANSISTOR-BASED SEMICONDUCTOR DEVICE WITH AIR-GAP SPACERS AND GATE CONTACT OVER ACTIVE AREA

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(X0) 15345137: SELF-ALIGNED CONTACT PROTECTION USING REINFORCED GATE CAP AND SPACER PORTIONS

(A1) 20180130889: SELF-ALIGNED CONTACT PROTECTION USING REINFORCED GATE CAP AND SPACER PORTIONS

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(X0) 15345644: METHODS OF FORMING GATE ELECTRODES ON A VERTICAL TRANSISTOR DEVICE

(A1) 20180130895: METHODS OF FORMING GATE ELECTRODES ON A VERTICAL TRANSISTOR DEVICE

(B2) 9: METHODS OF FORMING GATE ELECTRODES ON A VERTICAL TRANSISTOR DEVICE

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(X0) 15337254: METHODS OF FORMING A GATE CONTACT FOR A TRANSISTOR ABOVE THE ACTIVE REGION AND AN AIR GAP ADJACENT THE GATE OF THE TRANSISTOR

(A1) 20180122919: METHODS OF FORMING A GATE CONTACT FOR A TRANSISTOR ABOVE THE ACTIVE REGION AND AN AIR GAP ADJACENT THE GATE OF THE TRANSISTOR

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(X0) 15339497: HARD MASK LAYER TO REDUCE LOSS OF ISOLATION MATERIAL DURING DUMMY GATE REMOVAL

(A1) 20180122644: HARD MASK LAYER TO REDUCE LOSS OF ISOLATION MATERIAL DURING DUMMY GATE REMOVAL

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(X0) 15846365: METHODS OF FORMING TRANSISTOR DEVICES WITH DIFFERENT THRESHOLD VOLTAGES AND THE RESULTING DEVICES

(A1) 20180122702: METHODS OF FORMING TRANSISTOR DEVICES WITH DIFFERENT THRESHOLD VOLTAGES AND THE RESULTING DEVICES

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(X0) 15657659: METHODS OF FORMING NANOSHEET TRANSISTOR WITH DIELECTRIC ISOLATION OF SOURCE-DRAIN REGIONS AND RELATED STRUCTURE

(B1) 9: METHODS OF FORMING NANOSHEET TRANSISTOR WITH DIELECTRIC ISOLATION OF SOURCE-DRAIN REGIONS AND RELATED STRUCTURE

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(X0) 15833285: INTEGRATED CIRCUIT PRODUCTS THAT INCLUDE FINFET DEVICES AND A PROTECTION LAYER FORMED ON AN ISOLATION REGION

(A1) 20180102409: INTEGRATED CIRCUIT PRODUCTS THAT INCLUDE FINFET DEVICES AND A PROTECTION LAYER FORMED ON AN ISOLATION REGION

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(X0) 15284110: PREVENTING OXIDATION DEFECTS IN STRAIN-RELAXED FINS BY REDUCING LOCAL GAP FILL VOIDS

(A1) 20180096895: PREVENTING OXIDATION DEFECTS IN STRAIN-RELAXED FINS BY REDUCING LOCAL GAP FILL VOIDS

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(X0) 15689711: COMPOSITE ISOLATION STRUCTURES FOR A FIN-TYPE FIELD EFFECT TRANSISTOR

(A1) 20180096998: COMPOSITE ISOLATION STRUCTURES FOR A FIN-TYPE FIELD EFFECT TRANSISTOR

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(X0) 15291446: FIN CUT WITH ALTERNATING TWO COLOR FIN HARDMASK

(B1) 9: FIN CUT WITH ALTERNATING TWO COLOR FIN HARDMASK

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(X0) 15801023: METHODS, APPARATUS AND SYSTEM FOR STI RECESS CONTROL FOR HIGHLY SCALED FINFET DEVICES

(A1) 20180061832: METHODS, APPARATUS AND SYSTEM FOR STI RECESS CONTROL FOR HIGHLY SCALED FINFET DEVICES

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(X0) 15373691: METHODS OF FORMING A GATE CONTACT FOR A SEMICONDUCTOR DEVICE ABOVE THE ACTIVE REGION

(B1) 9: METHODS OF FORMING A GATE CONTACT FOR A SEMICONDUCTOR DEVICE ABOVE THE ACTIVE REGION

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(X0) 15233445: METHOD TO TUNE CONTACT CD AND REDUCE MASK COUNT BY TILTED ION BEAM

(A1) 20180047564: METHOD TO TUNE CONTACT CD AND REDUCE MASK COUNT BY TILTED ION BEAM

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(X0) 15219403: METHODS OF FORMING IC PRODUCTS COMPRISING A NANO-SHEET DEVICE AND A TRANSISTOR DEVICE

(A1) 20180033871: METHODS OF FORMING IC PRODUCTS COMPRISING A NANO-SHEET DEVICE AND A TRANSISTOR DEVICE

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