SEARCH RESULTS for assignor:"SHAH, GRISHMA"

Showing 1 to 7 of 7 results

Last Update Patent(s) Assignor(s) Orig. Assignee(s) Assignee(s) Reel/Frame
24-May-2018

(X0) 1: MEMORY DIE TEMPERATURE ADJUSTMENT BASED ON A POWER CONDITION

(A1) 2: MEMORY DIE TEMPERATURE ADJUSTMENT BASED ON A POWER CONDITION

REUSSWIG, PHILIP DAVID

YANG, NIAN NILES

SHAH, GRISHMA

RAGHU, DEEPAK

YADAV, PREETI

RAO, PRASANNA DESAI SUDHIR

AGGARWAL, SMITA

LEE, DANA

SANDISK TECHNOLOGIES LLC

44870/598

15-May-2018

(X0) 1: Storage System and Method for Temperature Throttling for Block Reading

(A1) 2: Storage System and Method for Temperature Throttling for Block Reading

(B2) 9: Storage System and Method for Temperature Throttling for Block Reading

YANG, NIAN NILES

SHAH, GRISHMA

REUSSWIG, PHILIP

SHARMA, SAHIL

LU, NAN

SANDISK TECHNOLOGIES LLC

40278/7

01-May-2018

(X0) 1: MULTI-DIE ROLLING STATUS MODE FOR NON-VOLATILE STORAGE

(A1) 2: MULTI-DIE ROLLING STATUS MODE FOR NON-VOLATILE STORAGE

(B2) 9: MULTI-DIE ROLLING STATUS MODE FOR NON-VOLATILE STORAGE

SHAH, GRISHMA

FRAYER, JACK

OLBRICH, AARON

SIAU, CHANG

MOHAN, VIDYABHUSHAN

BALAKRISHNAN, GOPINATH

ELLIS, ROBERT

SANDISK TECHNOLOGIES INC.

37561/386

15-Mar-2018

(X0) 1: STORAGE SYSTEM AND METHOD FOR REDUCING XOR RECOVERY TIME BY EXCLUDING INVALID DATA FROM XOR PARITY

(A1) 2: STORAGE SYSTEM AND METHOD FOR REDUCING XOR RECOVERY TIME BY EXCLUDING INVALID DATA FROM XOR PARITY

YANG, NIAN NILES

SHAH, GRISHMA

REUSSWIG, PHILIP

SANDISK TECHNOLOGIES LLC

39722/15

06-Mar-2018

(X0) 1: NON-VOLATILE MEMORY WITH DYNAMIC REPURPOSE OF WORD LINE

(A1) 2: NON-VOLATILE MEMORY WITH DYNAMIC REPURPOSE OF WORD LINE

(B2) 9: NON-VOLATILE MEMORY WITH DYNAMIC REPURPOSE OF WORD LINE

YANG, NIAN NILES

YUAN, JIAHUI

SHAH, GRISHMA

HU, XINDE

GU, LANLAN

WU, BIN

SANDISK TECHNOLOGIES LLC

38999/407

22-Feb-2018

(X0) 1: NON-VOLATILE MEMORY WITH READ DISTURB DETECTION FOR OPEN BLOCKS

(A1) 2: NON-VOLATILE MEMORY WITH READ DISTURB DETECTION FOR OPEN BLOCKS

REUSSWIG, PHIL

LAI, JOANNA

RAGHU, DEEPAK

SHAH, GRISHMA

YANG, NIAN NILES

SANDISK TECHNOLOGIES LLC

39476/993

30-Jan-2018

(X0) 1: MEMORY DIE TEMPERATURE ADJUSTMENT BASED ON A POWER CONDITION

(A1) 2: MEMORY DIE TEMPERATURE ADJUSTMENT BASED ON A POWER CONDITION

(B2) 9: MEMORY DIE TEMPERATURE ADJUSTMENT BASED ON A POWER CONDITION

REUSSWIG, PHILIP DAVID

YANG, NIAN NILES

SHAH, GRISHMA

RAGHU, DEEPAK

YADAV, PREETI

RAO, PRASANNA DESAI SUDHIR

AGGARWAL, SMITA

LEE, DANA

SANDISK TECHNOLOGIES LLC

39310/108