SEARCH RESULTS for assignor:"PAN, ZHENG-YANG"

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(X0) 15617331: Semiconductor Device and Method

(A1) 20180174913: Semiconductor Device and Method

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(X0) 15399143: FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WITH SEMICONDUCTOR NANOWIRE

(A1) 20180151357: FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WITH SEMICONDUCTOR NANOWIRE

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(X0) 15418023: Dopant Concentration Boost in Epitaxially Formed Material

(A1) 20180151730: Dopant Concentration Boost in Epitaxially Formed Material

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(X0) 15356004: FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE

(A1) 20180145076: FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE

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(X0) 15348652: FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE

(A1) 20180130802: FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE

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(X0) 15292428: STRUCTURE OF SEMICONDUCTOR DEVICE WITH SOURCE/DRAIN STRUCTURES

(A1) 20180108775: STRUCTURE OF SEMICONDUCTOR DEVICE WITH SOURCE/DRAIN STRUCTURES

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(X0) 14814959: Method for Detecting Presence and Location of Defects in a Substrate

(A1) 20170033218: Method for Detecting Presence and Location of Defects in a Substrate

(B2) 9: Method for Detecting Presence and Location of Defects in a Substrate

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(X0) 15379983: SEMICONDUCTOR STRUCTURE WITH DOPANTS DIFFUSE PROTECTION AND METHOD FOR FORMING THE SAME

(B1) 9: SEMICONDUCTOR STRUCTURE WITH DOPANTS DIFFUSE PROTECTION AND METHOD FOR FORMING THE SAME