SEARCH RESULTS for assignor:"MAKALA, RAGHUVEER S."

Showing 1 to 12 of 12 results

Last Update Patent(s) Assignor(s) Orig. Assignee(s) Assignee(s) Reel/Frame
31-May-2018

(X0) 1: THREE-DIMENSIONAL MEMORY DEVICE WITH DISCRETE SELF-ALIGNED CHARGE STORAGE ELEMENTS AND METHOD OF MAKING THEREOF

(A1) 2: THREE-DIMENSIONAL MEMORY DEVICE WITH DISCRETE SELF-ALIGNED CHARGE STORAGE ELEMENTS AND METHOD OF MAKING THEREOF

TSUTSUMI, MASANORI

KAJIWARA, KENGO

MAKALA, RAGHUVEER S.

SANDISK TECHNOLOGIES LLC

40430/900

31-May-2018

(X0) 1: THREE-DIMENSIONAL ARRAY DEVICE HAVING A METAL CONTAINING BARRIER AND METHOD OF MAKING THEREOF

(A1) 2: THREE-DIMENSIONAL ARRAY DEVICE HAVING A METAL CONTAINING BARRIER AND METHOD OF MAKING THEREOF

MAKALA, RAGHUVEER S.

CHOWDHURY, MURSHED

SHUKLA, KEERTI

ABE, TOMOHISA

LEE, YAO-SHENG

KAI, JAMES

SANDISK TECHNOLOGIES LLC

42878/628

29-May-2018

(X0) 1: COBALT-CONTAINING CONDUCTIVE LAYERS FOR CONTROL GATE ELECTRODES IN A MEMORY STRUCTURE

(A1) 2: COBALT-CONTAINING CONDUCTIVE LAYERS FOR CONTROL GATE ELECTRODES IN A MEMORY STRUCTURE

(B2) 9: COBALT-CONTAINING CONDUCTIVE LAYERS FOR CONTROL GATE ELECTRODES IN A MEMORY STRUCTURE

PERI, SOMESH

SHARANGPANI, RAHUL

MAKALA, RAGHUVEER S.

KANAKAMEDALA, SENAKA

SHUKLA, KEERTI

SANDISK TECHNOLOGIES LLC

39293/192

17-May-2018

(X0) 1: THREE-DIMENSIONAL MEMORY DEVICE HAVING SELECT GATE ELECTRODE THAT IS THICKER THAN WORD LINES AND METHOD OF MAKING THEREOF

(A1) 2: THREE-DIMENSIONAL MEMORY DEVICE HAVING SELECT GATE ELECTRODE THAT IS THICKER THAN WORD LINES AND METHOD OF MAKING THEREOF

SHIGEMURA, KEISUKE

ARIYOSHI, JUNICHI

TSUTSUMI, MASANORI

SANO, MICHIAKI

ZHANG, YANLI

MAKALA, RAGHUVEER S.

SANDISK TECHNOLOGIES LLC

42391/875

15-May-2018

(A1) 2: THREE-DIMENSIONAL MEMORY DEVICE HAVING A MULTILEVEL DRAIN SELECT GATE ELECTRODE AND METHOD OF MAKING THEREOF

(B2) 9: THREE-DIMENSIONAL MEMORY DEVICE HAVING A MULTILEVEL DRAIN SELECT GATE ELECTRODE AND METHOD OF MAKING THEREOF

(X0) 1: THREE-DIMENSIONAL MEMORY DEVICE HAVING A MULTILEVEL DRAIN SELECT GATE ELECTRODE AND METHOD OF MAKING THEREOF

(B1) 9: THREE-DIMENSIONAL MEMORY DEVICE HAVING A MULTILEVEL DRAIN SELECT GATE ELECTRODE AND METHOD OF MAKING THEREOF

ZHANG, YANLI

LIU, JIN

MAKALA, RAGHUVEER S.

CHOWDHURY, MURSHED

ALSMEIER, JOHANN

SANDISK TECHNOLOGIES LLC

40363/707

29-Mar-2018

(X0) 1: THREE-DIMENSIONAL MEMORY DEVICE CONTAINING WORD LINES FORMED BY SELECTIVE TUNGSTEN GROWTH ON NUCLEATION CONTROLLING SURFACES AND METHODS OF MANUFACTURING THE SAME

(A1) 2: THREE-DIMENSIONAL MEMORY DEVICE CONTAINING WORD LINES FORMED BY SELECTIVE TUNGSTEN GROWTH ON NUCLEATION CONTROLLING SURFACES AND METHODS OF MANUFACTURING THE SAME

SHARANGPANI, RAHUL

MAKALA, RAGHUVEER S.

ZHOU, FEI

RAJASHEKHAR, ADARSH

KANAKAMEDALA, SENAKA KRISHNA

AMANO, FUMITAKA

MIZUNO, GENTA

SANDISK TECHNOLOGIES LLC

44340/399

08-Feb-2018

(X0) 1: RIDGED WORD LINES FOR INCREASING CONTROL GATE LENGTHS IN A THREE-DIMENSIONAL MEMORY DEVICE

(A1) 2: RIDGED WORD LINES FOR INCREASING CONTROL GATE LENGTHS IN A THREE-DIMENSIONAL MEMORY DEVICE

(B2) 9: RIDGED WORD LINES FOR INCREASING CONTROL GATE LENGTHS IN A THREE-DIMENSIONAL MEMORY DEVICE

KANAKAMEDALA, SENAKA

SHARANGPANI, RAHUL

MAKALA, RAGHUVEER S.

PERI, SOMESH

LEE, YAO-SHENG

SANDISK TECHNOLOGIES LLC

39371/792

08-Feb-2018

(X0) 1: THREE-DIMENSIONAL MEMORY DEVICE WITH SEMICIRCULAR METAL-SEMICONDUCTOR ALLOY FLOATING GATE ELECTRODES AND METHODS OF MAKING THEREOF

(A1) 2: THREE-DIMENSIONAL MEMORY DEVICE WITH SEMICIRCULAR METAL-SEMICONDUCTOR ALLOY FLOATING GATE ELECTRODES AND METHODS OF MAKING THEREOF

KANAKAMEDALA, SENAKA

MAKALA, RAGHUVEER S.

SHARANGPANI, RAHUL

PERI, SOMESH

LEE, YAO-SHENG

SANDISK TECHNOLOGIES LLC

39333/248

06-Feb-2018

(X0) 1: THREE DIMENSIONAL NAND DEVICE HAVING DUMMY MEMORY HOLES AND METHOD OF MAKING THEREOF

(A1) 2: THREE DIMENSIONAL NAND DEVICE HAVING DUMMY MEMORY HOLES AND METHOD OF MAKING THEREOF

(B2) 9: THREE DIMENSIONAL NAND DEVICE HAVING DUMMY MEMORY HOLES AND METHOD OF MAKING THEREOF

ZHANG, YANLI

MAKALA, RAGHUVEER S.

ALSMEIER, JOHANN

LEE, YAO-SHENG

XU, TIGER

SANDISK TECHNOLOGIES INC.

37849/482

01-Feb-2018

(X0) 1: THREE-DIMENSIONAL MEMORY DEVICE CONTAINING COMPOSITE WORD LINES INCLUDING A METAL SILICIDE AND AN ELEMENTAL METAL AND METHOD OF MAKING THEREOF

(A1) 2: THREE-DIMENSIONAL MEMORY DEVICE CONTAINING COMPOSITE WORD LINES INCLUDING A METAL SILICIDE AND AN ELEMENTAL METAL AND METHOD OF MAKING THEREOF

SHARANGPANI, RAHUL

AMANO, FUMITAKA

MAKALA, RAGHUVEER S.

RAJASHEKHAR, ADARSH

ZHOU, FEI

SANDISK TECHNOLOGIES LLC

43910/859

01-Feb-2018

(X0) 1: NON-VOLATILE MEMORY WITH REDUCED VARIATIONS IN GATE RESISTANCE

(A1) 2: NON-VOLATILE MEMORY WITH REDUCED VARIATIONS IN GATE RESISTANCE

BARASKAR, ASHISH

MAKALA, RAGHUVEER S.

LU, CHING-HUANG

LEE, YAO-SHENG

CHEN, JIAN

SANDISK TECHNOLOGIES LLC

41403/726

23-Jan-2018

(X0) 1: THREE-DIMENSIONAL MEMORY DEVICE WITH ANNULAR BLOCKING DIELECTRICS AND DISCRETE CHARGE STORAGE ELEMENTS AND METHOD OF MAKING THEREOF

(B1) 9: THREE-DIMENSIONAL MEMORY DEVICE WITH ANNULAR BLOCKING DIELECTRICS AND DISCRETE CHARGE STORAGE ELEMENTS AND METHOD OF MAKING THEREOF

SHUKLA, KEERTI

MAKALA, RAGHUVEER S.

SHARANGPANI, RAHUL

ZHOU, FEI

SANDISK TECHNOLOGIES LLC

41182/964