SEARCH RESULTS for assignor:"JAGANNATHAN, HEMANTH"

Showing 1 to 20 of 23 results

Last Update Patent(s) Assignor(s) Orig. Assignee(s) Assignee(s) Reel/Frame
29-May-2018

(X0) 1: SIMPLIFIED GATE STACK PROCESS TO IMPROVE DUAL CHANNEL CMOS PERFORMANCE

(A1) 2: SIMPLIFIED GATE STACK PROCESS TO IMPROVE DUAL CHANNEL CMOS PERFORMANCE

(B2) 9: SIMPLIFIED GATE STACK PROCESS TO IMPROVE DUAL CHANNEL CMOS PERFORMANCE

JAGANNATHAN, HEMANTH

LEE, CHOONGHYUN

SOUTHWICK, RICHARD G., III

INTERNATIONAL BUSINESS MACHINES CORPORATION

42494/153

24-May-2018

(X0) 1: HIGH-K LAYER CHAMFERING TO PREVENT OXYGEN INGRESS IN REPLACEMENT METAL GATE (RMG) PROCESS

(A1) 2: HIGH-K LAYER CHAMFERING TO PREVENT OXYGEN INGRESS IN REPLACEMENT METAL GATE (RMG) PROCESS

ANDO, TAKASHI

BASKER, VEERARAGHAVAN S.

FALTERMEIER, JOHNATHAN E.

JAGANNATHAN, HEMANTH

YAMASHITA, TENKO

INTERNATIONAL BUSINESS MACHINES CORPORATION

44509/371

22-May-2018

(X0) 1: METHOD OF CUTTING FINS TO CREATE DIFFUSION BREAKS FOR FINFETS

(A1) 2: METHOD OF CUTTING FINS TO CREATE DIFFUSION BREAKS FOR FINFETS

(B2) 9: METHOD OF CUTTING FINS TO CREATE DIFFUSION BREAKS FOR FINFETS

JAGANNATHAN, HEMANTH

KANAKASABAPATHY, SIVANANDA K.

REZNICEK, ALEXANDER

INTERNATIONAL BUSINESS MACHINES CORPORATION

37253/772

17-May-2018

(X0) 1: LOW RESISTANCE SOURCE-DRAIN CONTACTS USING HIGH TEMPERATURE SILICIDES

(A1) 2: LOW RESISTANCE SOURCE-DRAIN CONTACTS USING HIGH TEMPERATURE SILICIDES

ADUSUMILLI, PRANEET

JAGANNATHAN, HEMANTH

LAVOIE, CHRISTIAN

OZCAN, AHMET S.

INTERNATIONAL BUSINESS MACHINES CORPORATION

44490/242

03-May-2018

(X0) 1: VTFET DEVICES UTILIZING LOW TEMPERATURE SELECTIVE EPITAXY

(A1) 2: VTFET DEVICES UTILIZING LOW TEMPERATURE SELECTIVE EPITAXY

JAGANNATHAN, HEMANTH

MOCHIZUKI, SHOGO

INTERNATIONAL BUSINESS MACHINES CORPORATION

43268/799

03-May-2018

(X0) 1: LOW RESISTANCE SOURCE-DRAIN CONTACTS USING HIGH TEMPERATURE SILICIDES

(A1) 2: LOW RESISTANCE SOURCE-DRAIN CONTACTS USING HIGH TEMPERATURE SILICIDES

ADUSUMILLI, PRANEET

JAGANNATHAN, HEMANTH

LAVOIE, CHRISTIAN

OZCAN, AHMET S.

INTERNATIONAL BUSINESS MACHINES CORPORATION

44489/936

01-May-2018

(X0) 1: BOTTOM CONTACT RESISTANCE REDUCTION ON VFET

(B1) 9: BOTTOM CONTACT RESISTANCE REDUCTION ON VFET

BAO, RUQIANG

LEE, CHOONGHYUN

MOCHIZUKI, SHOGO

JAGANNATHAN, HEMANTH

INTERNATIONAL BUSINESS MACHINES CORPORATION

42398/729

10-Apr-2018

(X0) 1: SELECTIVE THICKENING OF PFET DIELECTRIC

(A1) 2: SELECTIVE THICKENING OF PFET DIELECTRIC

(B2) 9: SELECTIVE THICKENING OF PFET DIELECTRIC

ANDO, TAKASHI

JAGANNATHAN, HEMANTH

LINDER, BARRY P.

INTERNATIONAL BUSINESS MACHINES CORPORATION

39303/73

29-Mar-2018

(X0) 1: SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

(A1) 2: SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

CHAO, ROBIN HSIN-KU

JAGANNATHAN, HEMANTH

LEE, CHOONGHYUN

YEUNG, CHUN WING

ZHANG, JINGYUN

INTERNATIONAL BUSINESS MACHINES CORPORATION

39940/149

29-Mar-2018

(X0) 1: CONTROLLING THRESHOLD VOLTAGE IN NANOSHEET TRANSISTORS

(A1) 2: CONTROLLING THRESHOLD VOLTAGE IN NANOSHEET TRANSISTORS

JAGANNATHAN, HEMANTH

JAMISON, PAUL C.

INTERNATIONAL BUSINESS MACHINES CORPORATION

43754/253

22-Mar-2018

(X0) 1: MASKLESS METHOD TO REDUCE SOURCE-DRAIN CONTACT RESISTANCE IN CMOS DEVICES

(A1) 2: MASKLESS METHOD TO REDUCE SOURCE-DRAIN CONTACT RESISTANCE IN CMOS DEVICES

ADUSUMILLI, PRANEET

JAGANNATHAN, HEMANTH

LAVOIE, CHRISTIAN

INTERNATIONAL BUSINESS MACHINES CORPORATION

44249/212

15-Mar-2018

(X0) 1: FORMATION OF PURE SILICON OXIDE INTERFACIAL LAYER ON SILICON-GERMANIUM CHANNEL FIELD EFFECT TRANSISTOR DEVICE

(A1) 2: FORMATION OF PURE SILICON OXIDE INTERFACIAL LAYER ON SILICON-GERMANIUM CHANNEL FIELD EFFECT TRANSISTOR DEVICE

ANDO, TAKASHI

HASHEMI, POUYA

JAGANNATHAN, HEMANTH

LEE, CHOONGHYUN

NARAYANAN, VIJAY

INTERNATIONAL BUSINESS MACHINES CORPORATION

39698/804

08-Mar-2018

(X0) 1: LOW RESISTANCE SOURCE-DRAIN CONTACTS USING HIGH TEMPERATURE SILICIDES

(A1) 2: LOW RESISTANCE SOURCE-DRAIN CONTACTS USING HIGH TEMPERATURE SILICIDES

ADUSUMILLI, PRANEET

JAGANNATHAN, HEMANTH

LAVOIE, CHRISTIAN

OZCAN, AHMET

INTERNATIONAL BUSINESS MACHINES CORPORATION

39677/73

08-Mar-2018

(X0) 1: LOW RESISTANCE SOURCE-DRAIN CONTACTS USING HIGH TEMPERATURE SILICIDES

(A1) 2: LOW RESISTANCE SOURCE-DRAIN CONTACTS USING HIGH TEMPERATURE SILICIDES

ADUSUMILLI, PRANEET

JAGANNATHAN, HEMANTH

LAVOIE, CHRISTIAN

OZCAN, AHMET S.

INTERNATIONAL BUSINESS MACHINES CORPORATION

40137/426

08-Mar-2018

(X0) 1: LOW RESISTANCE SOURCE-DRAIN CONTACTS USING HIGH TEMPERATURE SILICIDES

(A1) 2: LOW RESISTANCE SOURCE-DRAIN CONTACTS USING HIGH TEMPERATURE SILICIDES

ADUSUMILLI, PRANEET

JAGANNATHAN, HEMANTH

LAVOIE, CHRISTIAN

OZCAN, AHMET S.

INTERNATIONAL BUSINESS MACHINES CORPORATION

40138/221

08-Mar-2018

(X0) 1: LOW RESISTANCE SOURCE-DRAIN CONTACTS USING HIGH TEMPERATURE SILICIDES

(A1) 2: LOW RESISTANCE SOURCE-DRAIN CONTACTS USING HIGH TEMPERATURE SILICIDES

ADUSUMILLI, PRANEET

JAGANNATHAN, HEMANTH

LAVOIE, CHRISTIAN

OZCAN, AHMET S.

INTERNATIONAL BUSINESS MACHINES CORPORATION

40182/71

01-Mar-2018

(X0) 1: MASKLESS METHOD TO REDUCE SOURCE-DRAIN CONTACT RESISTANCE IN CMOS DEVICES

(A1) 2: MASKLESS METHOD TO REDUCE SOURCE-DRAIN CONTACT RESISTANCE IN CMOS DEVICES

ADUSUMILLI, PRANEET

JAGANNATHAN, HEMANTH

LAVOIE, CHRISTIAN

INTERNATIONAL BUSINESS MACHINES CORPORATION

39614/962

30-Jan-2018

(X0) 1: REPLACEMENT GATE ELECTRODE WITH MULTI-THICKNESS CONDUCTIVE METALLIC NITRIDE LAYERS

(A1) 2: REPLACEMENT GATE ELECTRODE WITH MULTI-THICKNESS CONDUCTIVE METALLIC NITRIDE LAYERS

(B2) 9: REPLACEMENT GATE ELECTRODE WITH MULTI-THICKNESS CONDUCTIVE METALLIC NITRIDE LAYERS

JAGANNATHAN, HEMANTH

PARUCHURI, VAMSI K.

INTERNATIONAL BUSINESS MACHINES CORPORATION

31906/543

25-Jan-2018

(X0) 1: FABRICATION OF SILICON-GERMANIUM FIN STRUCTURE HAVING SILICON-RICH OUTER SURFACE

(A1) 2: FABRICATION OF SILICON-GERMANIUM FIN STRUCTURE HAVING SILICON-RICH OUTER SURFACE

JAGANNATHAN, HEMANTH

LEE, CHOONGHYUN

MOCHIZUKI, SHOGO

WATANABE, KOJI

INTERNATIONAL BUSINESS MACHINES CORPORATION

42690/155

25-Jan-2018

(X0) 1: FABRICATION OF SILICON-GERMANIUM FIN STRUCTURE HAVING SILICON-RICH OUTER SURFACE

(A1) 2: FABRICATION OF SILICON-GERMANIUM FIN STRUCTURE HAVING SILICON-RICH OUTER SURFACE

JAGANNATHAN, HEMANTH

LEE, CHOONGHYUN

MOCHIZUKI, SHOGO

WATANABE, KOJI

INTERNATIONAL BUSINESS MACHINES CORPORATION

42690/250