SEARCH RESULTS for assignor:"JAGANNATHAN, HEMANTH"

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(X0) 15590627: FABRICATION OF FIELD EFFECT TRANSISTORS WITH DIFFERENT THRESHOLD VOLTAGES THROUGH MODIFIED CHANNEL INTERFACES

(A1) 20180331096: FABRICATION OF FIELD EFFECT TRANSISTORS WITH DIFFERENT THRESHOLD VOLTAGES THROUGH MODIFIED CHANNEL INTERFACES

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(X0) 15788469: MULTI-LAYER WORK FUNCTION METAL GATES WITH SIMILAR GATE THICKNESS TO ACHIEVE MULTI-VT FOR VFETS

(A1) 20180294191: MULTI-LAYER WORK FUNCTION METAL GATES WITH SIMILAR GATE THICKNESS TO ACHIEVE MULTI-VT FOR VFETS

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(X0) 15958765: MULTI-LAYER WORK FUNCTION METAL GATES WITH SIMILAR GATE THICKNESS TO ACHIEVE MULTI-VT FOR VFETS

(A1) 20180294192: MULTI-LAYER WORK FUNCTION METAL GATES WITH SIMILAR GATE THICKNESS TO ACHIEVE MULTI-VT FOR VFETS

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(X0) 16006905: VTFET DEVICES UTILIZING LOW TEMPERATURE SELECTIVE EPITAXY

(A1) 20180294354: VTFET DEVICES UTILIZING LOW TEMPERATURE SELECTIVE EPITAXY

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(X0) 15994745: SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

(A1) 20180286862: SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

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(X0) 15462501: EFFICIENT METAL-INSULATOR-METAL CAPACITOR

(A1) 20180269271: EFFICIENT METAL-INSULATOR-METAL CAPACITOR

(B2) 1: EFFICIENT METAL-INSULATOR-METAL CAPACITOR

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(X0) 15464436: STRUCTURE AND METHOD FOR MULTIPLE THRESHOLD VOLTAGE DEFINITION IN ADVANCED CMOS DEVICE TECHNOLOGY

(A1) 20180277540: STRUCTURE AND METHOD FOR MULTIPLE THRESHOLD VOLTAGE DEFINITION IN ADVANCED CMOS DEVICE TECHNOLOGY

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(X0) 15469860: SURFACE AREA ENHANCEMENT FOR STACKED METAL-INSULATOR-METAL (MIM) CAPACITOR

(A1) 20180277623: SURFACE AREA ENHANCEMENT FOR STACKED METAL-INSULATOR-METAL (MIM) CAPACITOR

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(X0) 15832250: SURFACE AREA ENHANCEMENT FOR STACKED METAL-INSULATOR-METAL (MIM) CAPACITOR

(A1) 20180277621: SURFACE AREA ENHANCEMENT FOR STACKED METAL-INSULATOR-METAL (MIM) CAPACITOR

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(X0) 15905885: BOTTOM CONTACT RESISTANCE REDUCTION ON VFET

(B1) 1: BOTTOM CONTACT RESISTANCE REDUCTION ON VFET

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(X0) 15805829: EFFICIENT METAL-INSULATOR-METAL CAPACITOR FABRICATION

(A1) 20180269274: EFFICIENT METAL-INSULATOR-METAL CAPACITOR FABRICATION

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(X0) 15279154: SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

(A1) 20180090494: SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

(B2) 1: SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SEMICONDUCTOR DEVICE

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(X0) 15958018: SIMPLIFIED GATE STACK PROCESS TO IMPROVE DUAL CHANNEL CMOS PERFORMANCE

(A1) 20180247096: SIMPLIFIED GATE STACK PROCESS TO IMPROVE DUAL CHANNEL CMOS PERFORMANCE

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(X0) 15958021: SIMPLIFIED GATE STACK PROCESS TO IMPROVE DUAL CHANNEL CMOS PERFORMANCE

(A1) 20180247097: SIMPLIFIED GATE STACK PROCESS TO IMPROVE DUAL CHANNEL CMOS PERFORMANCE

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(X0) 15440939: MULTILAYER DIELECTRIC FOR METAL-INSULATOR-METAL CAPACITOR (MIMCAP) CAPACITANCE AND LEAKAGE IMPROVEMENT

(A1) 20180240861: MULTILAYER DIELECTRIC FOR METAL-INSULATOR-METAL CAPACITOR (MIMCAP) CAPACITANCE AND LEAKAGE IMPROVEMENT

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(X0) 15706047: MULTILAYER DIELECTRIC FOR METAL-INSULATOR-METAL CAPACITOR (MIMCAP) CAPACITANCE AND LEAKAGE IMPROVEMENT

(A1) 20180240862: MULTILAYER DIELECTRIC FOR METAL-INSULATOR-METAL CAPACITOR (MIMCAP) CAPACITANCE AND LEAKAGE IMPROVEMENT

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(X0) 15706126: MULTILAYER DIELECTRIC FOR METAL-INSULATOR-METAL CAPACITOR (MIMCAP) CAPACITANCE AND LEAKAGE IMPROVEMENT

(A1) 20180240863: MULTILAYER DIELECTRIC FOR METAL-INSULATOR-METAL CAPACITOR (MIMCAP) CAPACITANCE AND LEAKAGE IMPROVEMENT

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(X0) 15674697: VTFET DEVICES UTILIZING LOW TEMPERATURE SELECTIVE EPITAXY

(A1) 20180122937: VTFET DEVICES UTILIZING LOW TEMPERATURE SELECTIVE EPITAXY

(B2) 1: VTFET DEVICES UTILIZING LOW TEMPERATURE SELECTIVE EPITAXY

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(X0) 15809261: METHOD TO REDUCE VARIABILITY IN CONTACT RESISTANCE

(A1) 20180226352: METHOD TO REDUCE VARIABILITY IN CONTACT RESISTANCE

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(B2) 1: UNIFORM THRESHOLD VOLTAGE FOR NANOSHEET DEVICES

(X0) 15424137: UNIFORM THRESHOLD VOLTAGE FOR NANOSHEET DEVICES

(A1) 20180226484: UNIFORM THRESHOLD VOLTAGE FOR NANOSHEET DEVICES