SEARCH RESULTS for assignor:"HSIEH, TUNG-HENG"

Showing 1 to 9 of 9 results

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(X0) 15649865: METAL GATE STRUCTURE AND METHODS THEREOF

(A1) 20180182859: METAL GATE STRUCTURE AND METHODS THEREOF

(B2) 1: METAL GATE STRUCTURE AND METHODS THEREOF

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(X0) 15188753: METHOD AND APPARATUS FOR INTEGRATED CIRCUIT LAYOUT

(A1) 20160370698: METHOD AND APPARATUS FOR INTEGRATED CIRCUIT LAYOUT

(B2) 9: METHOD AND APPARATUS FOR INTEGRATED CIRCUIT LAYOUT

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(X0) 14484670: SEMICONDUCTOR DEVICE, LAYOUT OF SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

(A1) 20160079162: SEMICONDUCTOR DEVICE, LAYOUT OF SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

(B2) 9: SEMICONDUCTOR DEVICE, LAYOUT OF SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

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(X0) 14473614: Cell Layout and Structure

(A1) 20160063166: Cell Layout and Structure

(B2) 9: Cell Layout and Structure

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(X0) 15854358: DUMMY FIN CELL PLACEMENT IN AN INTEGRATED CIRCUIT LAYOUT

(A1) 20180137232: DUMMY FIN CELL PLACEMENT IN AN INTEGRATED CIRCUIT LAYOUT

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(X0) 15863536: SYSTEM AND METHOD OF FABRICATING ESD FINFET WITH IMPROVED METAL LANDING IN THE DRAIN

(A1) 20180130792: SYSTEM AND METHOD OF FABRICATING ESD FINFET WITH IMPROVED METAL LANDING IN THE DRAIN

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(X0) 15339282: SYSTEM AND METHOD OF FABRICATING ESD FINFET WITH IMPROVED METAL LANDING IN THE DRAIN

(B1) 9: SYSTEM AND METHOD OF FABRICATING ESD FINFET WITH IMPROVED METAL LANDING IN THE DRAIN

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(X0) 15197026: DUMMY FIN CELL PLACEMENT IN AN INTEGRATED CIRCUIT LAYOUT

(A1) 20180004882: DUMMY FIN CELL PLACEMENT IN AN INTEGRATED CIRCUIT LAYOUT

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(X0) 15448709: Semiconductor Device and Manufacturing Method Thereof

(B1) 9: Semiconductor Device and Manufacturing Method Thereof