SEARCH RESULTS for assignor:"BI, ZHENXING"

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(X0) 16000153: VERTICAL TRANSPORT FIN FIELD EFFECT TRANSISTORS ON A SUBSTRATE WITH VARYING EFFECTIVE GATE LENGTHS

(A1) 20180286980: VERTICAL TRANSPORT FIN FIELD EFFECT TRANSISTORS ON A SUBSTRATE WITH VARYING EFFECTIVE GATE LENGTHS

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(X0) 15470352: NANOSHEET CMOS TRANSISTORS

(A1) 20180277628: NANOSHEET CMOS TRANSISTORS

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(X0) 15805700: NANOSHEET CMOS TRANSISTORS

(A1) 20180277630: NANOSHEET CMOS TRANSISTORS

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(X0) 15982558: FIN TYPE FIELD EFFECT TRANSISTORS WITH DIFFERENT PITCHES AND SUBSTANTIALLY UNIFORM FIN REVEAL

(A1) 20180269108: FIN TYPE FIELD EFFECT TRANSISTORS WITH DIFFERENT PITCHES AND SUBSTANTIALLY UNIFORM FIN REVEAL

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(X0) 15495197: RESISTOR FINS

(B1) 1: RESISTOR FINS

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(X0) 15447210: ETCH-RESISTANT SPACER FORMATION ON GATE STRUCTURE

(A1) 20180254331: ETCH-RESISTANT SPACER FORMATION ON GATE STRUCTURE

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(X0) 15819577: FINFET WITH UNIFORM SHALLOW TRENCH ISOLATION RECESS

(A1) 20180254273: FINFET WITH UNIFORM SHALLOW TRENCH ISOLATION RECESS

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(X0) 15959458: FORMATION OF INNER SPACER ON NANOSHEET MOSFET

(A1) 20180248021: FORMATION OF INNER SPACER ON NANOSHEET MOSFET

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(X0) 15435627: DUAL CHANNEL FINFETS HAVING UNIFORM FIN HEIGHTS

(A1) 20180240713: DUAL CHANNEL FINFETS HAVING UNIFORM FIN HEIGHTS

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(X0) 15440198: PHOTORESIST BRIDGING DEFECT REMOVAL BY REVERSE TONE WEAK DEVELOPER

(A1) 20180239253: PHOTORESIST BRIDGING DEFECT REMOVAL BY REVERSE TONE WEAK DEVELOPER

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(X0) 15800786: PHOTORESIST BRIDGING DEFECT REMOVAL BY REVERSE TONE WEAK DEVELOPER

(A1) 20180239254: PHOTORESIST BRIDGING DEFECT REMOVAL BY REVERSE TONE WEAK DEVELOPER

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(X0) 15811821: DUAL CHANNEL FINFETS HAVING UNIFORM FIN HEIGHTS

(A1) 20180240714: DUAL CHANNEL FINFETS HAVING UNIFORM FIN HEIGHTS

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(X0) 15958488: TUNABLE ON-CHIP NANOSHEET RESISTOR

(A1) 20180240858: TUNABLE ON-CHIP NANOSHEET RESISTOR

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(A1) 20180096994: VERTICAL FIN RESISTOR DEVICES

(B2) 1: VERTICAL FIN RESISTOR DEVICES

(X0) 15282272: VERTICAL FIN RESISTOR DEVICES

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Patent(s)

(X0) 15466420: POLYSILICON RESIDUE REMOVAL IN NANOSHEET MOSFETS

(A1) 20180090315: POLYSILICON RESIDUE REMOVAL IN NANOSHEET MOSFETS

(B2) 9: POLYSILICON RESIDUE REMOVAL IN NANOSHEET MOSFETS

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(X0) 15246912: TUNABLE ON-CHIP NANOSHEET RESISTOR

(A1) 20180061929: TUNABLE ON-CHIP NANOSHEET RESISTOR

(B2) 9: TUNABLE ON-CHIP NANOSHEET RESISTOR

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(X0) 15477296: NANOSHEET CAPACITOR

(A1) 20180083092: NANOSHEET CAPACITOR

(B2) 9: NANOSHEET CAPACITOR

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(X0) 15492615: VERTICAL SILICON/SILICON-GERMANIUM TRANSISTORS WITH MULTIPLE THRESHOLD VOLTAGES

(B1) 9: VERTICAL SILICON/SILICON-GERMANIUM TRANSISTORS WITH MULTIPLE THRESHOLD VOLTAGES

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(X0) 15498460: SHALLOW TRENCH ISOLATION RECESS PROCESS FLOW FOR VERTICAL FIELD EFFECT TRANSISTOR FABRICATION

(A1) 20180096989: SHALLOW TRENCH ISOLATION RECESS PROCESS FLOW FOR VERTICAL FIELD EFFECT TRANSISTOR FABRICATION

(B2) 9: SHALLOW TRENCH ISOLATION RECESS PROCESS FLOW FOR VERTICAL FIELD EFFECT TRANSISTOR FABRICATION

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Patent(s)

(X0) 15398232: HYBRID-CHANNEL NANO-SHEET FETS

(B1) 9: HYBRID-CHANNEL NANO-SHEET FETS