SEARCH RESULTS for assignor:"BENTLEY, STEVEN"

Showing 1 to 12 of 12 results

Last Update Patent(s) Assignor(s) Orig. Assignee(s) Assignee(s) Reel/Frame
24-May-2018

(X0) 1: METAL LAYER ROUTING LEVEL FOR VERTICAL FET SRAM AND LOGIC CELL SCALING

(A1) 2: METAL LAYER ROUTING LEVEL FOR VERTICAL FET SRAM AND LOGIC CELL SCALING

BENTLEY, STEVEN

PAUL, BIPUL C.

GLOBALFOUNDRIES INC.

43892/984

15-May-2018

(A1) 2: METHOD AND STRUCTURE TO CONTROL CHANNEL LENGTH IN VERTICAL FET DEVICE

(B2) 9: METHOD AND STRUCTURE TO CONTROL CHANNEL LENGTH IN VERTICAL FET DEVICE

(X0) 1: METHOD AND STRUCTURE TO CONTROL CHANNEL LENGTH IN VERTICAL FET DEVICE

(B1) 9: METHOD AND STRUCTURE TO CONTROL CHANNEL LENGTH IN VERTICAL FET DEVICE

BENTLEY, STEVEN

XIE, RUILONG

GLOBALFOUNDRIES INC.

40326/109

10-May-2018

(X0) 1: METHODS OF FORMING GATE ELECTRODES ON A VERTICAL TRANSISTOR DEVICE

(A1) 2: METHODS OF FORMING GATE ELECTRODES ON A VERTICAL TRANSISTOR DEVICE

(B2) 9: METHODS OF FORMING GATE ELECTRODES ON A VERTICAL TRANSISTOR DEVICE

PARK, CHANRO

BENTLEY, STEVEN

KIM, HOON

XIE, RUILONG

SUNG, MIN GYU

GLOBALFOUNDRIES INC.

40576/238

17-Apr-2018

(X0) 1: METHODS OF FORMING NANOSHEET TRANSISTOR WITH DIELECTRIC ISOLATION OF SOURCE-DRAIN REGIONS AND RELATED STRUCTURE

(B1) 9: METHODS OF FORMING NANOSHEET TRANSISTOR WITH DIELECTRIC ISOLATION OF SOURCE-DRAIN REGIONS AND RELATED STRUCTURE

FROUGIER, JULIEN

SUNG, MIN GYU

XIE, RUILONG

PARK, CHANRO

BENTLEY, STEVEN

GLOBALFOUNDRIES INC.

43078/28

29-Mar-2018

(B2) 9: METHODS, APPARATUS AND SYSTEM FOR SELF-ALIGNED RETROGRADE WELL DOPING FOR FINFET DEVICES

(X0) 1: METHODS, APPARATUS AND SYSTEM FOR SELF-ALIGNED RETROGRADE WELL DOPING FOR FINFET DEVICES

(A1) 2: METHODS, APPARATUS AND SYSTEM FOR SELF-ALIGNED RETROGRADE WELL DOPING FOR FINFET DEVICES

PARK, MIRA

LIM, KWAN-YONG

BENTLEY, STEVEN

JAIN, AMITABH

GLOBALFOUNDRIES INC.

39848/637

22-Mar-2018

(X0) 1: METHODS OF FORMING BOTTOM AND TOP SOURCE/DRAIN REGIONS ON A VERTICAL TRANSISTOR DEVICE

(A1) 2: METHODS OF FORMING BOTTOM AND TOP SOURCE/DRAIN REGIONS ON A VERTICAL TRANSISTOR DEVICE

SUVARNA, PUNEET HARISCHANDRA

BENTLEY, STEVEN J.

CHANEMOUGAME, DANIEL

GLOBALFOUNDRIES INC.

39777/953

22-Mar-2018

(X0) 1: METHODS OF FORMING A VERTICAL TRANSISTOR DEVICE

(A1) 2: METHODS OF FORMING A VERTICAL TRANSISTOR DEVICE

XIE, RUILONG

BENTLEY, STEVEN J.

FRONHEISER, JODY A.

GLOBALFOUNDRIES INC.

39778/525

01-Mar-2018

(X0) 1: FORMATION OF BOTTOM JUNCTION IN VERTICAL FET DEVICES

(A1) 2: FORMATION OF BOTTOM JUNCTION IN VERTICAL FET DEVICES

NIIMI, HIROAKI

LIM, KWAN-YONG

BENTLEY, STEVEN JOHN

CHANEMOUGAME, DANIEL

GLOBALFOUNDRIES INC.

43949/32

22-Feb-2018

(X0) 1: VERTICAL CHANNEL FIELD-EFFECT TRANSISTOR (FET) PROCESS COMPATIBLE LONG CHANNEL TRANSISTORS

(A1) 2: VERTICAL CHANNEL FIELD-EFFECT TRANSISTOR (FET) PROCESS COMPATIBLE LONG CHANNEL TRANSISTORS

ANDERSON, BRENT A.

BENTLEY, STEVEN

LIM, KWAN-YONG

NIIMI, HIROAKI

WANG, JUNLI

INTERNATIONAL BUSINESS MACHINES CORPORATION

39483/86

22-Feb-2018

(X0) 1: TRACK-DEPENDENT DECODING

(A1) 2: TRACK-DEPENDENT DECODING

BENTLEY, STEVEN R.

CIDECIYAN, ROY D.

FURRER, SIMEON

TANAKA, KEISUKE

INTERNATIONAL BUSINESS MACHINES CORPORATION

43917/778

01-Feb-2018

(X0) 1: METHOD, APPARATUS, AND SYSTEM FOR REDUCING DOPANT CONCENTRATIONS IN CHANNEL REGIONS OF FINFET DEVICES

(A1) 2: METHOD, APPARATUS, AND SYSTEM FOR REDUCING DOPANT CONCENTRATIONS IN CHANNEL REGIONS OF FINFET DEVICES

BENTLEY, STEVEN

LIM, KWAN-YONG

GLOBALFOUNDRIES INC.

39295/414

09-Jan-2018

(X0) 1: DIRECTED SELF-ASSEMBLY MATERIAL ETCH MASK FOR FORMING VERTICAL NANOWIRES

(A1) 2: DIRECTED SELF-ASSEMBLY MATERIAL ETCH MASK FOR FORMING VERTICAL NANOWIRES

(B2) 9: DIRECTED SELF-ASSEMBLY MATERIAL ETCH MASK FOR FORMING VERTICAL NANOWIRES

BENTLEY, STEVEN

FARRELL, RICHARD A.

SCHMID, GERARD

JACOB, AJEY POOVANNUMMOOTTIL

GLOBALFOUNDRIES INC.

33666/851