SEARCH RESULTS for assignor:"BAO, RUQIANG"

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(X0) 16032563: SELF-ALIGNED SPACER FOR CUT-LAST TRANSISTOR FABRICATION

(A1) 20180323280: SELF-ALIGNED SPACER FOR CUT-LAST TRANSISTOR FABRICATION

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(X0) 15975869: GATE-ALL-AROUND FIELD EFFECT TRANSISTOR HAVING MULTIPLE THRESHOLD VOLTAGES

(A1) 20180308945: GATE-ALL-AROUND FIELD EFFECT TRANSISTOR HAVING MULTIPLE THRESHOLD VOLTAGES

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(X0) 15788469: MULTI-LAYER WORK FUNCTION METAL GATES WITH SIMILAR GATE THICKNESS TO ACHIEVE MULTI-VT FOR VFETS

(A1) 20180294191: MULTI-LAYER WORK FUNCTION METAL GATES WITH SIMILAR GATE THICKNESS TO ACHIEVE MULTI-VT FOR VFETS

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(X0) 15958765: MULTI-LAYER WORK FUNCTION METAL GATES WITH SIMILAR GATE THICKNESS TO ACHIEVE MULTI-VT FOR VFETS

(A1) 20180294192: MULTI-LAYER WORK FUNCTION METAL GATES WITH SIMILAR GATE THICKNESS TO ACHIEVE MULTI-VT FOR VFETS

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(X0) 15905885: BOTTOM CONTACT RESISTANCE REDUCTION ON VFET

(B1) 1: BOTTOM CONTACT RESISTANCE REDUCTION ON VFET

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(X0) 15459539: ADDITIVE CORE SUBTRACTIVE LINER FOR METAL CUT ETCH PROCESSES

(A1) 20180269305: ADDITIVE CORE SUBTRACTIVE LINER FOR METAL CUT ETCH PROCESSES

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(X0) 15831815: ADDITIVE CORE SUBTRACTIVE LINER FOR METAL CUT ETCH PROCESSES

(A1) 20180269306: ADDITIVE CORE SUBTRACTIVE LINER FOR METAL CUT ETCH PROCESSES

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(X0) 14996575: FIELD EFFECT TRANSISTOR GATE STACK

(A1) 20170207132: FIELD EFFECT TRANSISTOR GATE STACK

(B2) 1: FIELD EFFECT TRANSISTOR GATE STACK

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(X0) 15828802: INTEGRATED CIRCUIT WITH REPLACEMENT GATE STACKS AND METHOD OF FORMING SAME

(A1) 20180096900: INTEGRATED CIRCUIT WITH REPLACEMENT GATE STACKS AND METHOD OF FORMING SAME

(B2) 1: INTEGRATED CIRCUIT WITH REPLACEMENT GATE STACKS AND METHOD OF FORMING SAME

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(X0) 15447210: ETCH-RESISTANT SPACER FORMATION ON GATE STRUCTURE

(A1) 20180254331: ETCH-RESISTANT SPACER FORMATION ON GATE STRUCTURE

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(X0) 15406114: SELF-ALIGNED SPACER FOR CUT-LAST TRANSISTOR FABRICATION

(A1) 20180082905: SELF-ALIGNED SPACER FOR CUT-LAST TRANSISTOR FABRICATION

(B2) 1: SELF-ALIGNED SPACER FOR CUT-LAST TRANSISTOR FABRICATION

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(B2) 1: UNIFORM THRESHOLD VOLTAGE FOR NANOSHEET DEVICES

(X0) 15424137: UNIFORM THRESHOLD VOLTAGE FOR NANOSHEET DEVICES

(A1) 20180226484: UNIFORM THRESHOLD VOLTAGE FOR NANOSHEET DEVICES

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(A1) 20180226493: REPLACEMENT METAL GATE SCHEME WITH SELF-ALIGNMENT GATE FOR VERTICAL FIELD EFFECT TRANSISTORS

(B2) 1: REPLACEMENT METAL GATE SCHEME WITH SELF-ALIGNMENT GATE FOR VERTICAL FIELD EFFECT TRANSISTORS

(X0) 15804535: REPLACEMENT METAL GATE SCHEME WITH SELF-ALIGNMENT GATE FOR VERTICAL FIELD EFFECT TRANSISTORS

(B1) 1: REPLACEMENT METAL GATE SCHEME WITH SELF-ALIGNMENT GATE FOR VERTICAL FIELD EFFECT TRANSISTORS

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(X0) 15414011: NANOSHEET CAPACITOR

(A1) 20180212017: NANOSHEET CAPACITOR

(B2) 1: NANOSHEET CAPACITOR

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(X0) 15416281: APPROACH TO CONTROL OVER-ETCHING OF BOTTOM SPACERS IN VERTICAL FIN FIELD EFFECT TRANSISTOR DEVICES

(A1) 20180212037: APPROACH TO CONTROL OVER-ETCHING OF BOTTOM SPACERS IN VERTICAL FIN FIELD EFFECT TRANSISTOR DEVICES

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(X0) 15918199: APPROACH TO CONTROL OVER-ETCHING OF BOTTOM SPACERS IN VERTICAL FIN FIELD EFFECT TRANSISTOR DEVICES

(A1) 20180212040: APPROACH TO CONTROL OVER-ETCHING OF BOTTOM SPACERS IN VERTICAL FIN FIELD EFFECT TRANSISTOR DEVICES

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(X0) 15412499: FORMATION OF COMMON INTERFACIAL LAYER ON Si/SiGe DUAL CHANNEL COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE

(A1) 20180211885: FORMATION OF COMMON INTERFACIAL LAYER ON Si/SiGe DUAL CHANNEL COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE

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(X0) 15176902: SHARED METAL GATE STACK WITH TUNABLE WORK FUNCTION

(A1) 20170358655: SHARED METAL GATE STACK WITH TUNABLE WORK FUNCTION

(B2) 1: SHARED METAL GATE STACK WITH TUNABLE WORK FUNCTION

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(X0) 15209201: LOW RESISTIVE ELECTRODE FOR AN EXTENDABLE HIGH-K METAL GATE STACK

(A1) 20170200720: LOW RESISTIVE ELECTRODE FOR AN EXTENDABLE HIGH-K METAL GATE STACK

(B2) 9: LOW RESISTIVE ELECTRODE FOR AN EXTENDABLE HIGH-K METAL GATE STACK

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(X0) 15585608: DUAL CHANNEL STRUCTURES WITH MULTIPLE THRESHOLD VOLTAGES

(B1) 9: DUAL CHANNEL STRUCTURES WITH MULTIPLE THRESHOLD VOLTAGES