SEARCH RESULTS for assignee:"UNITED MICROELECTRONICS CORP."

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(X0) 16001367: METHOD FOR MANUFACTURING THE SEMICONDUCTOR STRUCTURE

(A1) 20180288326: METHOD FOR MANUFACTURING THE SEMICONDUCTOR STRUCTURE

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(X0) 15585000: EXTREME ULTRAVIOLET PHOTOMASK AND METHOD FOR FABRICATING THE SAME

(A1) 20180284596: EXTREME ULTRAVIOLET PHOTOMASK AND METHOD FOR FABRICATING THE SAME

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(X0) 15589985: SEMICONDUCTOR MEMORY DEVICE

(A1) 20180286474: SEMICONDUCTOR MEMORY DEVICE

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(X0) 15138226: ELECTROSTATIC DISCHARGE PROTECTION SEMICONDUCTOR DEVICE AND LAYOUT STRUCTURE OF ESD PROTECTION SEMICONDUCTOR DEVICE

(A1) 20170309613: ELECTROSTATIC DISCHARGE PROTECTION SEMICONDUCTOR DEVICE AND LAYOUT STRUCTURE OF ESD PROTECTION SEMICONDUCTOR DEVICE

(B2) 1: ELECTROSTATIC DISCHARGE PROTECTION SEMICONDUCTOR DEVICE AND LAYOUT STRUCTURE OF ESD PROTECTION SEMICONDUCTOR DEVICE

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(X0) 15146741: MICROELECTROMECHANICAL SYSTEM STRUCTURE INCLUDING THERMAL STABILITY LAYER WHOSE MATERIAL HAS HIGHER GROWTH TEMPERATURE, AND METHOD FOR FABRICATING THE SAME

(A1) 20170320727: MICROELECTROMECHANICAL SYSTEM STRUCTURE INCLUDING THERMAL STABILITY LAYER WHOSE MATERIAL HAS HIGHER GROWTH TEMPERATURE, AND METHOD FOR FABRICATING THE SAME

(B2) 1: MICROELECTROMECHANICAL SYSTEM STRUCTURE INCLUDING THERMAL STABILITY LAYER WHOSE MATERIAL HAS HIGHER GROWTH TEMPERATURE, AND METHOD FOR FABRICATING THE SAME

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(X0) 15359975: SEMICONDUCTOR DEVICE HAVING MEMORY CELL STRUCTURE AND METHOD OF MANUFACTURING THE SAME

(A1) 20180108837: SEMICONDUCTOR DEVICE HAVING MEMORY CELL STRUCTURE AND METHOD OF MANUFACTURING THE SAME

(B2) 1: SEMICONDUCTOR DEVICE HAVING MEMORY CELL STRUCTURE AND METHOD OF MANUFACTURING THE SAME

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(A1) 20180286872: SEMICONDUCTOR MEMORY DEVICE

(B2) 1: SEMICONDUCTOR MEMORY DEVICE

(X0) 15498464: SEMICONDUCTOR MEMORY DEVICE

(B1) 1: SEMICONDUCTOR MEMORY DEVICE

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(X0) 15604675: METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

(A1) 20170263504: METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

(B2) 1: METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

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(X0) 15648439: MANUFACTURING METHOD OF PATTERNED STRUCTURE OF SEMICONDUCTOR

(A1) 20170309727: MANUFACTURING METHOD OF PATTERNED STRUCTURE OF SEMICONDUCTOR

(B2) 1: MANUFACTURING METHOD OF PATTERNED STRUCTURE OF SEMICONDUCTOR

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(X0) 15396805: SEMICONDUCTOR STRUCTURE AND METHOD FOR REVIEWING DEFECTS

(A1) 20180188185: SEMICONDUCTOR STRUCTURE AND METHOD FOR REVIEWING DEFECTS

(B2) 1: SEMICONDUCTOR STRUCTURE AND METHOD FOR REVIEWING DEFECTS

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(X0) 15785606: SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME

(B1) 1: SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME

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(X0) 15486521: SEMICONDUCTOR PACKAGE STRUCTURE AND METHOD FOR FORMING THE SAME

(A1) 20180269167: SEMICONDUCTOR PACKAGE STRUCTURE AND METHOD FOR FORMING THE SAME

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(X0) 15491939: SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

(A1) 20180269212: SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

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(X0) 14483177: PLANAR DUAL-GATE NON-VOLATILE MEMORY DEVICE

(A1) 20160020334: PLANAR DUAL-GATE NON-VOLATILE MEMORY DEVICE

(B2) 1: PLANAR DUAL-GATE NON-VOLATILE MEMORY DEVICE

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(X0) 15362771: METHOD OF FABRICATING METAL-INSULATOR-METAL CAPACITOR

(A1) 20180151666: METHOD OF FABRICATING METAL-INSULATOR-METAL CAPACITOR

(B2) 1: METHOD OF FABRICATING METAL-INSULATOR-METAL CAPACITOR

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(A1) 20180269107: Method of Forming a Semiconductor Device

(B2) 1: Method of Forming a Semiconductor Device

(X0) 15458038: Method of Forming a Semiconductor Device

(B1) 1: Method of Forming a Semiconductor Device

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(X0) 15636660: METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING WICK STRUCTURE

(A1) 20170330742: METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING WICK STRUCTURE

(B2) 1: METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING WICK STRUCTURE

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(X0) 15394833: SEMICONDUCTOR DEVICE HAVING ASYMMETRIC SPACER STRUCTURES

(A1) 20180190785: SEMICONDUCTOR DEVICE HAVING ASYMMETRIC SPACER STRUCTURES

(B2) 1: SEMICONDUCTOR DEVICE HAVING ASYMMETRIC SPACER STRUCTURES

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(X0) 15407541: IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME

(A1) 20170125462: IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME

(B2) 1: IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME