SEARCH RESULTS for assignee:"SANDISK TECHNOLOGIES LLC"

Recent Patent Assignments Patent Assignments - (Total found: 159)

Last Update Patent(s) Assignor(s) Orig. Assignee(s) Assignee(s) Reel/Frame
17-May-2018

(X0) 1: METHODS AND APPARATUS FOR THREE-DIMENSIONAL NONVOLATILE MEMORY

(A1) 2: METHODS AND APPARATUS FOR THREE-DIMENSIONAL NONVOLATILE MEMORY

PADILLA, ALVARO

RAJAMOHANAN, BIJESH

SANDISK TECHNOLOGIES LLC

40328/669

17-May-2018

(X0) 1: INTERFACE FOR NON-VOLATILE MEMORY

(A1) 2: INTERFACE FOR NON-VOLATILE MEMORY

LEE, JIWANG

PAI, ANIL

TANG, TIANYU

MADPUR, RAVINDRA ARJUN

KAUR, AMANDEEP

KRISHNAN, RAGUL KUMAR

KOLAGATLA, VENKATA

SANDISK TECHNOLOGIES LLC

40498/697

17-May-2018

(X0) 1: STORAGE SYSTEM AND METHOD FOR PROVIDING GRAY LEVELS OF READ SECURITY

(A1) 2: STORAGE SYSTEM AND METHOD FOR PROVIDING GRAY LEVELS OF READ SECURITY

SHAPIRA, OFER

HAHN, JUDAH GAMLIEL

BAZARSKY, ALEXANDER

NAVON, ARIEL

BERLER, DANNY

SANDISK TECHNOLOGIES LLC

40727/238

17-May-2018

(X0) 1: COMMAND CONTROL FOR MULTI-CORE NON-VOLATILE MEMORY

(A1) 2: COMMAND CONTROL FOR MULTI-CORE NON-VOLATILE MEMORY

OUYANG, JINGWEN

HILTON, GREG

PAKHALE, JAYESH

SANDISK TECHNOLOGIES LLC

40998/376

17-May-2018

(X0) 1: STORAGE OPERATION QUEUE

(A1) 2: STORAGE OPERATION QUEUE

OUYANG, JINGWEN

ZHANG, HENRY

SANDISK TECHNOLOGIES LLC

41022/281

17-May-2018

(X0) 1: THREE-DIMENSIONAL MEMORY DEVICE HAVING SELECT GATE ELECTRODE THAT IS THICKER THAN WORD LINES AND METHOD OF MAKING THEREOF

(A1) 2: THREE-DIMENSIONAL MEMORY DEVICE HAVING SELECT GATE ELECTRODE THAT IS THICKER THAN WORD LINES AND METHOD OF MAKING THEREOF

SHIGEMURA, KEISUKE

ARIYOSHI, JUNICHI

TSUTSUMI, MASANORI

SANO, MICHIAKI

ZHANG, YANLI

MAKALA, RAGHUVEER S.

SANDISK TECHNOLOGIES LLC

42391/875

17-May-2018

(X0) 1: THREE-DIMENSIONAL MEMORY DEVICE WITH SELF-ALIGNED DRAIN SIDE SELECT GATE ELECTRODES AND METHOD OF MAKING THEREOF

(A1) 2: THREE-DIMENSIONAL MEMORY DEVICE WITH SELF-ALIGNED DRAIN SIDE SELECT GATE ELECTRODES AND METHOD OF MAKING THEREOF

(B2) 9: THREE-DIMENSIONAL MEMORY DEVICE WITH SELF-ALIGNED DRAIN SIDE SELECT GATE ELECTRODES AND METHOD OF MAKING THEREOF

KAI, JAMES

CHOWDHURY, MURSHED

LIU, JIN

ALSMEIER, JOHANN

SANDISK TECHNOLOGIES LLC

43090/884

17-May-2018

(X0) 1: INTERFACE FOR NON-VOLATILE MEMORY

(A1) 2: INTERFACE FOR NON-VOLATILE MEMORY

MADPUR, RAVINDRA ARJUN

KAUR, AMANDEEP

SANDISK TECHNOLOGIES LLC

45524/193

15-May-2018

(X0) 1: DYNAMIC LOGICAL GROUPS FOR MAPPING FLASH MEMORY

(A1) 2: DYNAMIC LOGICAL GROUPS FOR MAPPING FLASH MEMORY

(B2) 9: DYNAMIC LOGICAL GROUPS FOR MAPPING FLASH MEMORY

SIVASANKARAN, VIJAY

SHIVHARE, VIVEK

MANOHAR, ABHIJEET

SANDISK TECHNOLOGIES INC.

32760/221

15-May-2018

(X0) 1: Storage System and Method for Temperature Throttling for Block Reading

(A1) 2: Storage System and Method for Temperature Throttling for Block Reading

(B2) 9: Storage System and Method for Temperature Throttling for Block Reading

YANG, NIAN NILES

SHAH, GRISHMA

REUSSWIG, PHILIP

SHARMA, SAHIL

LU, NAN

SANDISK TECHNOLOGIES LLC

40278/7

15-May-2018

(A1) 2: THREE-DIMENSIONAL MEMORY DEVICE HAVING A MULTILEVEL DRAIN SELECT GATE ELECTRODE AND METHOD OF MAKING THEREOF

(B2) 9: THREE-DIMENSIONAL MEMORY DEVICE HAVING A MULTILEVEL DRAIN SELECT GATE ELECTRODE AND METHOD OF MAKING THEREOF

(X0) 1: THREE-DIMENSIONAL MEMORY DEVICE HAVING A MULTILEVEL DRAIN SELECT GATE ELECTRODE AND METHOD OF MAKING THEREOF

(B1) 9: THREE-DIMENSIONAL MEMORY DEVICE HAVING A MULTILEVEL DRAIN SELECT GATE ELECTRODE AND METHOD OF MAKING THEREOF

ZHANG, YANLI

LIU, JIN

MAKALA, RAGHUVEER S.

CHOWDHURY, MURSHED

ALSMEIER, JOHANN

SANDISK TECHNOLOGIES LLC

40363/707

10-May-2018

(X0) 1: Method and System for Write Amplification Analysis

(A1) 2: Method and System for Write Amplification Analysis

DUZLY, YACOV

SOBOL, EYAL

SHAKED, TAL

HOD, LIAT

GILAD, OMER

INNA, ZEVULUN EINAT

SANDISK TECHNOLOGIES LLC

40278/37

10-May-2018

(X0) 1: THREE-DIMENSIONAL MEMORY DEVICE WITH ELECTRICALLY ISOLATED SUPPORT PILLAR STRUCTURES AND METHOD OF MAKING THEREOF

(A1) 2: THREE-DIMENSIONAL MEMORY DEVICE WITH ELECTRICALLY ISOLATED SUPPORT PILLAR STRUCTURES AND METHOD OF MAKING THEREOF

HOSODA, NAOHIRO

KAWAMURA, TAKESHI

FURIHATA, YOKO

FUNAYAMA, KOTA

SANDISK TECHNOLOGIES LLC

40478/953

10-May-2018

(X0) 1: METHOD AND DECODER TO ADJUST AN ERROR LOCATOR POLYNOMIAL BASED ON AN ERROR PARITY

(A1) 2: METHOD AND DECODER TO ADJUST AN ERROR LOCATOR POLYNOMIAL BASED ON AN ERROR PARITY

SANDISK TECHNOLOGIES LLC

40569/189

03-May-2018

(X0) 1: Erase For Partially Programmed Blocks In Non-Volatile Memory

(A1) 2: Erase For Partially Programmed Blocks In Non-Volatile Memory

RAY, BISWAJIT

DUNGA, MOHAN

CHEN, CHANGYUEN

SANDISK TECHNOLOGIES LLC

40161/685

03-May-2018

(X0) 1: MULTI-LEVEL TEMPERATURE DETECTION WITH OFFSET-FREE INPUT SAMPLING

(A1) 2: MULTI-LEVEL TEMPERATURE DETECTION WITH OFFSET-FREE INPUT SAMPLING

SANDISK TECHNOLOGIES LLC

40162/369

03-May-2018

(X0) 1: BULB-SHAPED MEMORY STACK STRUCTURES FOR DIRECT SOURCE CONTACT IN THREE-DIMENSIONAL MEMORY DEVICE

(A1) 2: BULB-SHAPED MEMORY STACK STRUCTURES FOR DIRECT SOURCE CONTACT IN THREE-DIMENSIONAL MEMORY DEVICE

MATSUMOTO, KAZUYO

KASAGI, YASUO

SHIMIZU, SATOSHI

OGAWA, HIROYUKI

MASAMORI, YOHEI

YU, JIXIN

ZHANG, TONG

KAI, JAMES

SANDISK TECHNOLOGIES LLC

41568/435

03-May-2018

(X0) 1: BULB-SHAPED MEMORY STACK STRUCTURES FOR DIRECT SOURCE CONTACT IN THREE-DIMENSIONAL MEMORY DEVICE

(A1) 2: BULB-SHAPED MEMORY STACK STRUCTURES FOR DIRECT SOURCE CONTACT IN THREE-DIMENSIONAL MEMORY DEVICE

OGAWA, HIROYUKI

KASAGI, YASUO

SHIMIZU, SATOSHI

MATSUMOTO, KAZUYO

MASAMORI, YOHEI

YU, JIXIN

ZHANG, TONG

KAI, JAMES

SANDISK TECHNOLOGIES LLC

41570/208

03-May-2018

(X0) 1: BULB-SHAPED MEMORY STACK STRUCTURES FOR DIRECT SOURCE CONTACT IN THREE-DIMENSIONAL MEMORY DEVICE

(A1) 2: BULB-SHAPED MEMORY STACK STRUCTURES FOR DIRECT SOURCE CONTACT IN THREE-DIMENSIONAL MEMORY DEVICE

YU, JIXIN

KITAMURA, KENTO

ZHANG, TONG

GE, CHUN

ZHANG, YANLI

SHIMIZU, SATOSHI

KASAGI, YASUO

OGAWA, HIROYUKI

MAO, DAXIN

YAMAGUCHI, KENSUKE

ALSMEIER, JOHANN

KAI, JAMES

SANDISK TECHNOLOGIES LLC

42764/622

03-May-2018

(X0) 1: NON-VOLATILE MEMORY WITH REDUCED PROGRAM SPEED VARIATION

(A1) 2: NON-VOLATILE MEMORY WITH REDUCED PROGRAM SPEED VARIATION

BARASKAR, ASHISH

PANG, LIANG

ZHANG, YANLI

MAKALA, RAGHUVEER

DONG, YINGDA

SANDISK TECHNOLOGIES LLC

44436/917