SEARCH RESULTS for assignee:"GLOBALFOUNDRIES INC."

Showing 1 to 20 of 395 results

Last Update Patent(s) Assignor(s) Orig. Assignee(s) Assignee(s) Reel/Frame
24-May-2018

(X0) 1: EARLY DEVELOPMENT OF A DATABASE OF FAIL SIGNATURES FOR SYSTEMATIC DEFECTS IN INTEGRATED CIRCUIT (IC) CHIPS

(A1) 2: EARLY DEVELOPMENT OF A DATABASE OF FAIL SIGNATURES FOR SYSTEMATIC DEFECTS IN INTEGRATED CIRCUIT (IC) CHIPS

DESINENI, RAO

CHITTORA, ATUL

PAN, YAN

FERNANDES, SHERWIN

HERRMANN, THOMAS

GLOBALFOUNDRIES INC.

40366/540

24-May-2018

(X0) 1: FIELD-EFFECT TRANSISTORS WITH A BURIED BODY CONTACT

(A1) 2: FIELD-EFFECT TRANSISTORS WITH A BURIED BODY CONTACT

SHANK, STEVEN M.

JAFFE, MARK D.

PEKARIK, JOHN J.

GLOBALFOUNDRIES INC.

40366/708

24-May-2018

(X0) 1: SELF-ALIGNED LITHOGRAPHIC PATTERNING

(A1) 2: SELF-ALIGNED LITHOGRAPHIC PATTERNING

LAW, SHAO BENG

BEIQUE, GENEVIEVE

MONT, FRANK W.

SUN, LEI

ZHANG, XUNYUAN

GLOBALFOUNDRIES INC.

40404/142

24-May-2018

(X0) 1: POST SPACER SELF-ALIGNED CUTS

(A1) 2: POST SPACER SELF-ALIGNED CUTS

LAW, SHAO BENG

ZHANG, XUNYUAN

MONT, FRANK W.

BEIQUE, GENEVIEVE

SUN, LEI

GLOBALFOUNDRIES INC.

40411/333

24-May-2018

(X0) 1: HETEROJUNCTION BIPOLAR TRANSISTOR DEVICE INTEGRATION SCHEMES ON A SAME WAFER

(A1) 2: HETEROJUNCTION BIPOLAR TRANSISTOR DEVICE INTEGRATION SCHEMES ON A SAME WAFER

CAMILLO-CASTILLO, RENATA A.

JAIN, VIBHOR

LIU, QIZHI

STAMPER, ANTHONY K.

GLOBALFOUNDRIES INC.

40411/502

24-May-2018

(X0) 1: Parallel Stacked Inductor for High-Q and High Current Handling and Method of Making the Same

(A1) 2: Parallel Stacked Inductor for High-Q and High Current Handling and Method of Making the Same

GLOBALFOUNDRIES INC.

40744/831

24-May-2018

(X0) 1: METAL LAYER ROUTING LEVEL FOR VERTICAL FET SRAM AND LOGIC CELL SCALING

(A1) 2: METAL LAYER ROUTING LEVEL FOR VERTICAL FET SRAM AND LOGIC CELL SCALING

BENTLEY, STEVEN

PAUL, BIPUL C.

GLOBALFOUNDRIES INC.

43892/984

24-May-2018

(X0) 1: METHOD, APPARATUS, AND SYSTEM HAVING SUPER STEEP RETROGRADE WELL WITH ENGINEERED DOPANT PROFILES

(A1) 2: METHOD, APPARATUS, AND SYSTEM HAVING SUPER STEEP RETROGRADE WELL WITH ENGINEERED DOPANT PROFILES

BRUNCO, DAVID PAUL

JOHNSON, JEFFREY BOWMAN

GLOBALFOUNDRIES INC.

44673/918

24-May-2018

(X0) 1: SELF-CONTAINED METROLOGY WAFER CARRIER SYSTEMS

(A1) 2: SELF-CONTAINED METROLOGY WAFER CARRIER SYSTEMS

BELLO, ABNER

WAITE, STEPHANIE

FOSNIGHT, WILLIAM J.

BEEG, THOMAS

GLOBALFOUNDRIES INC.

44687/619

22-May-2018

GLOBALFOUNDRIES U.S. 2 LLC

GLOBALFOUNDRIES U.S. INC.

GLOBALFOUNDRIES INC.

36779/1

22-May-2018

(X0) 1: SOI-MOSFET GATE INSULATION LAYER WITH DIFFERENT THICKNESS

(A1) 2: SOI-MOSFET GATE INSULATION LAYER WITH DIFFERENT THICKNESS

(B2) 9: SOI-MOSFET GATE INSULATION LAYER WITH DIFFERENT THICKNESS

ABOU-KHALIL, MICHEL J.

BOTULA, ALAN BERNARD

GROSS, BLAINE JEFFREY

JAFFE, MARK D.

JOSEPH, ALVIN

PHELPS, RICHARD A.

SHANK, STEVEN M.

SLINKMAN, JAMES ALBERT

GLOBALFOUNDRIES INC.

37375/789

22-May-2018

GLOBALFOUNDRIES U.S. 2 LLC

GLOBALFOUNDRIES U.S. INC.

GLOBALFOUNDRIES INC.

37542/87

22-May-2018

(X0) 1: NITRIDE SPACER FOR PROTECTING A FIN-SHAPED FIELD EFFECT TRANSISTOR (FINFET) DEVICE

(A1) 2: NITRIDE SPACER FOR PROTECTING A FIN-SHAPED FIELD EFFECT TRANSISTOR (FINFET) DEVICE

(B2) 9: NITRIDE SPACER FOR PROTECTING A FIN-SHAPED FIELD EFFECT TRANSISTOR (FINFET) DEVICE

GLOBALFOUNDRIES INC.

37872/826

22-May-2018

(X0) 1: MOISTURE AND/OR ELECTRICALLY CONDUCTIVE REMAINS DETECTION FOR WAFERS AFTER RINSE / DRY PROCESS

(A1) 2: MOISTURE AND/OR ELECTRICALLY CONDUCTIVE REMAINS DETECTION FOR WAFERS AFTER RINSE / DRY PROCESS

(B2) 9: MOISTURE AND/OR ELECTRICALLY CONDUCTIVE REMAINS DETECTION FOR WAFERS AFTER RINSE / DRY PROCESS

PAPPRITZ, THOMAS

CLAUSSEN, LUTZ

GLOBALFOUNDRIES INC.

38896/473

22-May-2018

(X0) 1: FIN PATTERNING FOR A FIN-TYPE FIELD-EFFECT TRANSISTOR

(A1) 2: FIN PATTERNING FOR A FIN-TYPE FIELD-EFFECT TRANSISTOR

(B2) 9: FIN PATTERNING FOR A FIN-TYPE FIELD-EFFECT TRANSISTOR

XIE, RUILONG

SUNG, MIN GYU

CAVE, NIGEL G.

LIEBMANN, LARS

GLOBALFOUNDRIES INC.

39817/591

22-May-2018

(X0) 1: NANOSTRUCTURE FIELD-EFFECT TRANSISTORS WITH ENHANCED MOBILITY SOURCE/DRAIN REGIONS

(A1) 2: NANOSTRUCTURE FIELD-EFFECT TRANSISTORS WITH ENHANCED MOBILITY SOURCE/DRAIN REGIONS

(B2) 9: NANOSTRUCTURE FIELD-EFFECT TRANSISTORS WITH ENHANCED MOBILITY SOURCE/DRAIN REGIONS

GLOBALFOUNDRIES INC.

40261/917

17-May-2018

(X0) 1: SEMICONDUCTOR SUBSTRATE WITH METALLIC DOPED BURIED OXIDE

(A1) 2: SEMICONDUCTOR SUBSTRATE WITH METALLIC DOPED BURIED OXIDE

LIU, WEN

BOCASH, CRAIG M.

GRAAS, CAROLE D.

CHEN, FEN

GLOBALFOUNDRIES INC.

40324/425

17-May-2018

(A1) 2: TRANSISTOR-BASED SEMICONDUCTOR DEVICE WITH AIR-GAP SPACERS AND GATE CONTACT OVER ACTIVE AREA

(X0) 1: TRANSISTOR-BASED SEMICONDUCTOR DEVICE WITH AIR-GAP SPACERS AND GATE CONTACT OVER ACTIVE AREA

XIE, RUILONG

SUNG, MIN GYU

PARK, CHANRO

LIEBMANN, LARS WOLFGANG

KIM, HOON

GLOBALFOUNDRIES INC.

40327/668

17-May-2018

(X0) 1: INTERCONNECT STRUCTURE AND METHOD OF FORMING THE SAME

(A1) 2: INTERCONNECT STRUCTURE AND METHOD OF FORMING THE SAME

LIANG, JIM SHIH-CHUN

WONG, KEITH KWONG HON

GLOBALFOUNDRIES INC.

40336/916

17-May-2018

(X0) 1: FORMATION OF BAND-EDGE CONTACTS

(A1) 2: FORMATION OF BAND-EDGE CONTACTS

LEE, TEK PO RINUS

KRISHNAN, BHARAT

LIU, JINPING

ZANG, HUI

HOLT, JUDSON ROBERT

GLOBALFOUNDRIES INC.

40344/422