SEARCH RESULTS for assignor:WALKER, JOHN ANDREW, II

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(X0) 15332945: SYSTEM AND METHOD FOR IMPROVED PERFORMANCE IN A MULTIDIMENSIONAL DATABASE ENVIRONMENT

(A1) 20170116310: SYSTEM AND METHOD FOR IMPROVED PERFORMANCE IN A MULTIDIMENSIONAL DATABASE ENVIRONMENT

(B2) 1: SYSTEM AND METHOD FOR IMPROVED PERFORMANCE IN A MULTIDIMENSIONAL DATABASE ENVIRONMENT

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(X0) 15857430: CYLINDRICAL VERTICAL SI ETCHED CHANNEL 3D SWITCHING DEVICES

(A1) 20190206461: CYLINDRICAL VERTICAL SI ETCHED CHANNEL 3D SWITCHING DEVICES

(B2) 1: CYLINDRICAL VERTICAL SI ETCHED CHANNEL 3D SWITCHING DEVICES

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(X0) 15857358: FABRICATION METHODS OF FORMING CYLINDRICAL VERTICAL SI ETCHED CHANNEL 3D SWITCHING DEVICES

(A1) 20190207081: FABRICATION METHODS OF FORMING CYLINDRICAL VERTICAL SI ETCHED CHANNEL 3D SWITCHING DEVICES

(B2) 1: FABRICATION METHODS OF FORMING CYLINDRICAL VERTICAL SI ETCHED CHANNEL 3D SWITCHING DEVICES

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(X0) 15764960: 2-AMINOQUINAZOLINE DERIVATIVES AS P70S6 KINASE INHIBITORS

(A1) 20180370975: 2-AMINOQUINAZOLINE DERIVATIVES AS P70S6 KINASE INHIBITORS

(B2) 1: 2-AMINOQUINAZOLINE DERIVATIVES AS P70S6 KINASE INHIBITORS

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(X0) 11379610: Office System Prediction Configuration Sharing

(A1) 20070250765: Office System Prediction Configuration Sharing

(B2) 1: Office System Prediction Configuration Sharing

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(X0) 14859131: USING INTRABODY SIGNAL PROPAGATION TO INFER WEARABLE DEVICE LOCATION ON THE BODY FOR SENSOR OPTIMIZATION AND CONFIGURATION

(A1) 20170086023: USING INTRABODY SIGNAL PROPAGATION TO INFER WEARABLE DEVICE LOCATION ON THE BODY FOR SENSOR OPTIMIZATION AND CONFIGURATION

(B2) 1: USING INTRABODY SIGNAL PROPAGATION TO INFER WEARABLE DEVICE LOCATION ON THE BODY FOR SENSOR OPTIMIZATION AND CONFIGURATION

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(X0) 15082996: AERODYNAMIC WHEEL COVERS AND MOUNTING ASSEMBLIES

(A1) 20160207352: AERODYNAMIC WHEEL COVERS AND MOUNTING ASSEMBLIES

(B2) 1: AERODYNAMIC WHEEL COVERS AND MOUNTING ASSEMBLIES

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(X0) 15857410: PERPENDICULAR MAGNETIC TUNNEL JUNCTION MEMORY CELLS HAVING VERTICAL CHANNELS

(A1) 20190207024: PERPENDICULAR MAGNETIC TUNNEL JUNCTION MEMORY CELLS HAVING VERTICAL CHANNELS

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(X0) 15857387: METHODS OF FORMING PERPENDICULAR MAGNETIC TUNNEL JUNCTION MEMORY CELLS HAVING VERTICAL CHANNELS

(A1) 20190206716: METHODS OF FORMING PERPENDICULAR MAGNETIC TUNNEL JUNCTION MEMORY CELLS HAVING VERTICAL CHANNELS

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(X0) 15859070: METHOD OF MAKING A THREE DIMENSIONAL PERPENDICULAR MAGNETIC TUNNEL JUNCTION WITH THIN-FILM TRANSISTOR

(A1) 20190206932: METHOD OF MAKING A THREE DIMENSIONAL PERPENDICULAR MAGNETIC TUNNEL JUNCTION WITH THIN-FILM TRANSISTOR

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(X0) 15859114: THREE DIMENSIONAL PERPENDICULAR MAGNETIC JUNCTION WITH THIN-FILM TRANSISTOR

(A1) 20190206934: THREE DIMENSIONAL PERPENDICULAR MAGNETIC JUNCTION WITH THIN-FILM TRANSISTOR

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(X0) 15859040: PERPENDICULAR MAGNETIC TUNNEL JUNCTION MEMORY CELLS HAVING SHARED SOURCE CONTACTS

(A1) 20190206463: PERPENDICULAR MAGNETIC TUNNEL JUNCTION MEMORY CELLS HAVING SHARED SOURCE CONTACTS

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(X0) 15859037: FAULT-TOLERANT CACHE COHERENCE OVER A LOSSY NETWORK

(A1) 20190207714: FAULT-TOLERANT CACHE COHERENCE OVER A LOSSY NETWORK

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(X0) 15858787: FAULT-TOLERANT CACHE COHERENCE OVER A LOSSY NETWORK

(A1) 20190205252: FAULT-TOLERANT CACHE COHERENCE OVER A LOSSY NETWORK

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(X0) 15859453: VERTICALLY-STRAINED SILICON DEVICE FOR USE WITH A PERPENDICULAR MAGNETIC TUNNEL JUNCTION (PMTJ)

(A1) 20190206940: VERTICALLY-STRAINED SILICON DEVICE FOR USE WITH A PERPENDICULAR MAGNETIC TUNNEL JUNCTION (PMTJ)

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(X0) 15859116: VERTICAL COMPOUND SEMICONDUCTOR FOR USE WITH A PERPENDICULAR MAGNETIC TUNNEL JUNCTION (PMTJ)

(A1) 20190207098: VERTICAL COMPOUND SEMICONDUCTOR FOR USE WITH A PERPENDICULAR MAGNETIC TUNNEL JUNCTION (PMTJ)

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(X0) 15859222: FABRICATION METHODS OF FORMING ANNULAR VERTICAL SI ETCHED CHANNEL MOS DEVICES

(A1) 20190206937: FABRICATION METHODS OF FORMING ANNULAR VERTICAL SI ETCHED CHANNEL MOS DEVICES

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(X0) 15859245: ANNULAR VERTICAL SI ETCHED CHANNEL MOS DEVICES

(A1) 20190206938: ANNULAR VERTICAL SI ETCHED CHANNEL MOS DEVICES

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(X0) 15859139: Vertical Steep-Slope Field-Effect Transistor (I-MOSFET) with Offset Gate Electrode for Driving a Perpendicular Magnetic Tunnel Junction (PMTJ)

(A1) 20190206935: Vertical Steep-Slope Field-Effect Transistor (I-MOSFET) with Offset Gate Electrode for Driving a Perpendicular Magnetic Tunnel Junction (PMTJ)

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(X0) 15873693: ATOMIC MOVES WITH LAMPORT CLOCKS IN A CONTENT MANAGEMENT SYSTEM

(A1) 20190205457: ATOMIC MOVES WITH LAMPORT CLOCKS IN A CONTENT MANAGEMENT SYSTEM

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