SEARCH RESULTS for assignor:"BALAKRISHNAN, KARTHIK; CHENG, KANGGUO; HASHEMI, POUYA; REZNICEK, ALEXANDER" AND day:[2019-01-01T00:00:00Z TO 2019-01-01T23:59:59Z]

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(X0) 14732174: COMPOUND SEMICONDUCTOR DEVICES HAVING BURIED RESISTORS FORMED IN BUFFER LAYER

(A1) 20160358905: COMPOUND SEMICONDUCTOR DEVICES HAVING BURIED RESISTORS FORMED IN BUFFER LAYER

(B2) 1: COMPOUND SEMICONDUCTOR DEVICES HAVING BURIED RESISTORS FORMED IN BUFFER LAYER

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(X0) 15498669: VERTICAL FIELD-EFFECT-TRANSISTORS HAVING MULTIPLE THRESHOLD VOLTAGES

(A1) 20170229449: VERTICAL FIELD-EFFECT-TRANSISTORS HAVING MULTIPLE THRESHOLD VOLTAGES

(B2) 1: VERTICAL FIELD-EFFECT-TRANSISTORS HAVING MULTIPLE THRESHOLD VOLTAGES

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(X0) 15627875: CO-FABRICATION OF VERTICAL DIODES AND FIN FIELD EFFECT TRANSISTORS ON THE SAME SUBSTRATE

(A1) 20170287904: CO-FABRICATION OF VERTICAL DIODES AND FIN FIELD EFFECT TRANSISTORS ON THE SAME SUBSTRATE

(B2) 1: CO-FABRICATION OF VERTICAL DIODES AND FIN FIELD EFFECT TRANSISTORS ON THE SAME SUBSTRATE

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(X0) 15683351: VERTICAL SCHOTTKY CONTACT FET

(A1) 20180026135: VERTICAL SCHOTTKY CONTACT FET

(B2) 1: VERTICAL SCHOTTKY CONTACT FET