SEARCH RESULTS for assignee:"LAM RESEARCH CORPORATION"

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(X0) 15593987: TEMPERATURE-TUNED SUBSTRATE SUPPORT FOR SUBSTRATE PROCESSING SYSTEMS

(A1) 20180330928: TEMPERATURE-TUNED SUBSTRATE SUPPORT FOR SUBSTRATE PROCESSING SYSTEMS

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(X0) 15593987: TEMPERATURE-TUNED SUBSTRATE SUPPORT FOR SUBSTRATE PROCESSING SYSTEMS

(A1) 20180330928: TEMPERATURE-TUNED SUBSTRATE SUPPORT FOR SUBSTRATE PROCESSING SYSTEMS

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(X0) 15594118: Halogen Removal Module and Associated Systems and Methods

(A1) 20180330942: Halogen Removal Module and Associated Systems and Methods

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(X0) 15594118: Halogen Removal Module and Associated Systems and Methods

(A1) 20180330942: Halogen Removal Module and Associated Systems and Methods

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(X0) 16045330: METHOD FOR SELECTIVELY ETCHING WITH REDUCED ASPECT RATIO DEPENDENCE

(A1) 20180330959: METHOD FOR SELECTIVELY ETCHING WITH REDUCED ASPECT RATIO DEPENDENCE

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(X0) 16044371: REMOTE PLASMA BASED DEPOSITION OF SILICON CARBIDE FILMS USING SILICON-CONTAINING AND CARBON-CONTAINING PRECURSORS

(A1) 20180330945: REMOTE PLASMA BASED DEPOSITION OF SILICON CARBIDE FILMS USING SILICON-CONTAINING AND CARBON-CONTAINING PRECURSORS

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(X0) 15969626: CONDITIONING CHAMBER COMPONENT

(A1) 20180318890: CONDITIONING CHAMBER COMPONENT

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(X0) 14728444: LARGE DYNAMIC RANGE RF VOLTAGE SENSOR AND METHOD FOR VOLTAGE MODE RF BIAS APPLICATION OF PLASMA PROCESSING SYSTEMS

(A1) 20160358755: LARGE DYNAMIC RANGE RF VOLTAGE SENSOR AND METHOD FOR VOLTAGE MODE RF BIAS APPLICATION OF PLASMA PROCESSING SYSTEMS

(B2) 1: LARGE DYNAMIC RANGE RF VOLTAGE SENSOR AND METHOD FOR VOLTAGE MODE RF BIAS APPLICATION OF PLASMA PROCESSING SYSTEMS

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(X0) 15074953: SYSTEMS AND METHODS FOR DETECTION OF PLASMA INSTABILITY BY OPTICAL DIAGNOSIS

(A1) 20170141001: SYSTEMS AND METHODS FOR DETECTION OF PLASMA INSTABILITY BY OPTICAL DIAGNOSIS

(B2) 1: SYSTEMS AND METHODS FOR DETECTION OF PLASMA INSTABILITY BY OPTICAL DIAGNOSIS

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(X0) 14843775: MONOLITHIC MANIFOLD MASK AND SUBSTRATE CONCEPTS

(A1) 20170057028: MONOLITHIC MANIFOLD MASK AND SUBSTRATE CONCEPTS

(B2) 1: MONOLITHIC MANIFOLD MASK AND SUBSTRATE CONCEPTS

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(X0) 14802920: AZIMUTHAL MIXER

(A1) 20160032456: AZIMUTHAL MIXER

(B2) 1: AZIMUTHAL MIXER

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(X0) 15581951: SELECTIVE DEPOSITION WITH ATOMIC LAYER ETCH RESET

(A1) 20180308680: SELECTIVE DEPOSITION WITH ATOMIC LAYER ETCH RESET

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(X0) 15492662: SILICON-BASED DEPOSITION FOR SEMICONDUCTOR PROCESSING

(A1) 20180308693: SILICON-BASED DEPOSITION FOR SEMICONDUCTOR PROCESSING

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(X0) 15492976: METHODS AND APPARATUS FOR FORMING SMOOTH AND CONFORMAL COBALT FILM BY ATOMIC LAYER DEPOSITION

(A1) 20180308701: METHODS AND APPARATUS FOR FORMING SMOOTH AND CONFORMAL COBALT FILM BY ATOMIC LAYER DEPOSITION

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(X0) 15495701: EUV PHOTOPATTERNING AND SELECTIVE DEPOSITION FOR NEGATIVE PATTERN MASK

(A1) 20180308687: EUV PHOTOPATTERNING AND SELECTIVE DEPOSITION FOR NEGATIVE PATTERN MASK

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(X0) 15955099: ATOMIC LAYER ETCH, REACTIVE PRECURSORS AND ENERGETIC SOURCES FOR PATTERNING APPLICATIONS

(A1) 20180308695: ATOMIC LAYER ETCH, REACTIVE PRECURSORS AND ENERGETIC SOURCES FOR PATTERNING APPLICATIONS

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(X0) 15493972: RAPID CHAMBER CLEAN USING CONCURRENT IN-SITU AND REMOTE PLASMA SOURCES

(A1) 20180305814: RAPID CHAMBER CLEAN USING CONCURRENT IN-SITU AND REMOTE PLASMA SOURCES

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(X0) 15493802: METHOD FOR DEPOSITING HIGH DEPOSITION RATE, THICK TETRAETHYL ORTHOSILICATE FILM WITH LOW COMPRESSIVE STRESS, HIGH FILM STABILITY AND LOW SHRINKAGE

(A1) 20180305812: METHOD FOR DEPOSITING HIGH DEPOSITION RATE, THICK TETRAETHYL ORTHOSILICATE FILM WITH LOW COMPRESSIVE STRESS, HIGH FILM STABILITY AND LOW SHRINKAGE

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(X0) 15948143: LOW RESISTIVITY FILMS CONTAINING MOLYBDENUM

(A1) 20180294187: LOW RESISTIVITY FILMS CONTAINING MOLYBDENUM

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(X0) 15945806: SYSTEM DESIGN FOR IN-LINE PARTICLE AND CONTAMINATION METROLOGY FOR SHOWERHEAD AND ELECTRODE PARTS

(A1) 20180294197: SYSTEM DESIGN FOR IN-LINE PARTICLE AND CONTAMINATION METROLOGY FOR SHOWERHEAD AND ELECTRODE PARTS