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(X0) 16255464: High Temperature Atomic Layer Deposition of Silicon Oxide Thin Films

(A1) 20190189431: High Temperature Atomic Layer Deposition of Silicon Oxide Thin Films

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(X0) 16245555: Chemical Mechanical Polishing (CMP) of Cobalt-Containing Substrate

(A1) 20190172720: Chemical Mechanical Polishing (CMP) of Cobalt-Containing Substrate

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(X0) 16170152: Silacyclic Compounds and Methods for Depositing Silicon-Containing Films Using Same

(A1) 20190134663: Silacyclic Compounds and Methods for Depositing Silicon-Containing Films Using Same

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(X0) 15404376: High Temperature Atomic Layer Deposition of Silicon-Containing Films

(A1) 20170207082: High Temperature Atomic Layer Deposition of Silicon-Containing Films

(B2) 1: High Temperature Atomic Layer Deposition of Silicon-Containing Films

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(X0) 15976028: Methods for Depositing Films with Organoaminodisilane Precursors

(A1) 20180294152: Methods for Depositing Films with Organoaminodisilane Precursors

(B2) 1: Methods for Depositing Films with Organoaminodisilane Precursors

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(X0) 16141735: Compositions and Methods for Preventing Collapse of High Aspect Ratio Structures During Drying

(A1) 20190119610: Compositions and Methods for Preventing Collapse of High Aspect Ratio Structures During Drying

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(X0) 15630584: ADDITIVES FOR BARRIER CHEMICAL MECHANICAL PLANARIZATION

(A1) 20180002571: ADDITIVES FOR BARRIER CHEMICAL MECHANICAL PLANARIZATION

(B2) 1: ADDITIVES FOR BARRIER CHEMICAL MECHANICAL PLANARIZATION

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(X0) 16175667: Stop-On Silicon Containing Layer Additive

(A1) 20190062598: Stop-On Silicon Containing Layer Additive

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(X0) 16110422: Metal Chemical Mechanical Planarization (CMP) Composition and Methods Therefore

(A1) 20190062597: Metal Chemical Mechanical Planarization (CMP) Composition and Methods Therefore

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(X0) 16079672: COMPOSITIONS AND METHODS USING SAME FOR DEPOSITION OF SILICON-CONTAINING FILM

(A1) 20190055645: COMPOSITIONS AND METHODS USING SAME FOR DEPOSITION OF SILICON-CONTAINING FILM

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(X0) 16101869: Chemical Mechanical Planarization (CMP) Composition and Methods Therefore for Copper and Through Silica Via (TSV) Applications

(A1) 20190055430: Chemical Mechanical Planarization (CMP) Composition and Methods Therefore for Copper and Through Silica Via (TSV) Applications