SEARCH RESULTS for assignee:"sandisk technologies"

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(X0) 15621305: GERMANIUM-BASED BARRIER MODULATED CELL

(A1) 20180358550: GERMANIUM-BASED BARRIER MODULATED CELL

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(B2) 10153430: GERMANIUM-BASED BARRIER MODULATED CELL

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(X0) 15615972: SEPARATE DRAIN-SIDE DUMMY WORD LINES WITHIN A BLOCK TO REDUCE PROGRAM DISTURB

(A1) 20180358102: SEPARATE DRAIN-SIDE DUMMY WORD LINES WITHIN A BLOCK TO REDUCE PROGRAM DISTURB

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(B2) 10297330: SEPARATE DRAIN-SIDE DUMMY WORD LINES WITHIN A BLOCK TO REDUCE PROGRAM DISTURB

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(X0) 15618878: GATE VOLTAGE CONTROLLED PERPINDICULAR SPIN ORBIT TORQUE MRAM MEMORY CELL

(A1) 20180358542: GATE VOLTAGE CONTROLLED PERPINDICULAR SPIN ORBIT TORQUE MRAM MEMORY CELL

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(B2) 10276783: GATE VOLTAGE CONTROLLED PERPINDICULAR SPIN ORBIT TORQUE MRAM MEMORY CELL

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(X0) 15914560: MULTI-TIER MEMORY DEVICE WITH ROUNDED TOP PART OF JOINT STRUCTURE AND METHODS OF MAKING THE SAME

(A1) 20190280000: MULTI-TIER MEMORY DEVICE WITH ROUNDED TOP PART OF JOINT STRUCTURE AND METHODS OF MAKING THE SAME

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(X0) 16002265: THREE-DIMENSIONAL MEMORY DEVICE CONTAINING REPLACEMENT CONTACT VIA STRUCTURES AND METHOD OF MAKING THE SAME

(A1) 20190280001: THREE-DIMENSIONAL MEMORY DEVICE CONTAINING REPLACEMENT CONTACT VIA STRUCTURES AND METHOD OF MAKING THE SAME

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(X0) 16020739: CONCURRENT FORMATION OF MEMORY OPENINGS AND CONTACT OPENINGS FOR A THREE-DIMENSIONAL MEMORY DEVICE

(A1) 20190280002: CONCURRENT FORMATION OF MEMORY OPENINGS AND CONTACT OPENINGS FOR A THREE-DIMENSIONAL MEMORY DEVICE

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(B2) 10388666: CONCURRENT FORMATION OF MEMORY OPENINGS AND CONTACT OPENINGS FOR A THREE-DIMENSIONAL MEMORY DEVICE

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(X0) 15915252: SPIRAL GAS ADSORPTION APPARATUS AND METHOD OF USING THE SAME

(A1) 20190275459: SPIRAL GAS ADSORPTION APPARATUS AND METHOD OF USING THE SAME

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(X0) 16020817: THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THE SAME USING CONCURRENT FORMATION OF MEMORY OPENINGS AND CONTACT OPENINGS

(A1) 20190280003: THREE-DIMENSIONAL MEMORY DEVICE AND METHOD OF MAKING THE SAME USING CONCURRENT FORMATION OF MEMORY OPENINGS AND CONTACT OPENINGS

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(X0) 15910998: ADAPTIVE PROGRAMMING VOLTAGE FOR NON-VOLATILE MEMORY DEVICES

(A1) 20190272871: ADAPTIVE PROGRAMMING VOLTAGE FOR NON-VOLATILE MEMORY DEVICES

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(X0) 15909073: MULTI-TIER THREE-DIMENSIONAL MEMORY DEVICE CONTAINING DIFFERENTIAL ETCH RATE FIELD OXIDES AND METHOD OF MAKING THE SAME

(A1) 20190273088: MULTI-TIER THREE-DIMENSIONAL MEMORY DEVICE CONTAINING DIFFERENTIAL ETCH RATE FIELD OXIDES AND METHOD OF MAKING THE SAME

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(X0) 15907570: NON-VOLATILE MEMORY WITH SMART ERASE VERIFY

(A1) 20190267106: NON-VOLATILE MEMORY WITH SMART ERASE VERIFY

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(B2) 10381095: NON-VOLATILE MEMORY WITH SMART ERASE VERIFY

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(X0) 15901633: DAMASCENE PROCESS FOR FORMING THREE-DIMENSIONAL CROSS RAIL PHASE CHANGE MEMORY DEVICES

(A1) 20190259946: DAMASCENE PROCESS FOR FORMING THREE-DIMENSIONAL CROSS RAIL PHASE CHANGE MEMORY DEVICES

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(X0) 15900093: PREVENTING REFRESH OF VOLTAGES OF DUMMY MEMORY CELLS TO REDUCE THRESHOLD VOLTAGE DOWNSHIFT FOR SELECT GATE TRANSISTORS

(A1) 20190259462: PREVENTING REFRESH OF VOLTAGES OF DUMMY MEMORY CELLS TO REDUCE THRESHOLD VOLTAGE DOWNSHIFT FOR SELECT GATE TRANSISTORS

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(X0) 15897550: PROGRAMMING DUMMY MEMORY CELLS IN ERASE OPERATION TO REDUCE THRESHOLD VOLTAGE DOWNSHIFT FOR SELECT GATE TRANSISTORS

(A1) 20190252029: PROGRAMMING DUMMY MEMORY CELLS IN ERASE OPERATION TO REDUCE THRESHOLD VOLTAGE DOWNSHIFT FOR SELECT GATE TRANSISTORS

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(B2) 10373697: PROGRAMMING DUMMY MEMORY CELLS IN ERASE OPERATION TO REDUCE THRESHOLD VOLTAGE DOWNSHIFT FOR SELECT GATE TRANSISTORS

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(X0) 15892648: VERTICAL CHIP INTERPOSER AND METHOD OF MAKING A CHIP ASSEMBLY CONTAINING THE VERTICAL CHIP INTERPOSER

(A1) 20190252361: VERTICAL CHIP INTERPOSER AND METHOD OF MAKING A CHIP ASSEMBLY CONTAINING THE VERTICAL CHIP INTERPOSER

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(X0) 16017996: DYNAMIC ERASE LOOP DEPENDENT BIAS VOLTAGE

(A1) 20190244673: DYNAMIC ERASE LOOP DEPENDENT BIAS VOLTAGE

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(X0) 15891370: MULTI-RESISTANCE MRAM

(A1) 20190245136: MULTI-RESISTANCE MRAM

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(X0) 15959837: MULTI-RESISTANCE MRAM

(A1) 20190245137: MULTI-RESISTANCE MRAM

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(B2) 10374148: MULTI-RESISTANCE MRAM

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(X0) 15884725: VERTICAL 1T FERROELECTRIC MEMORY CELLS, MEMORY ARRAYS AND METHODS OF FORMING THE SAME

(A1) 20190237470: VERTICAL 1T FERROELECTRIC MEMORY CELLS, MEMORY ARRAYS AND METHODS OF FORMING THE SAME

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(X0) 15877219: THREE-DIMENSIONAL MEMORY DEVICE INCLUDING CONTACT VIA STRUCTURES THAT EXTEND THROUGH WORD LINES AND METHOD OF MAKING THE SAME

(A1) 20190229125: THREE-DIMENSIONAL MEMORY DEVICE INCLUDING CONTACT VIA STRUCTURES THAT EXTEND THROUGH WORD LINES AND METHOD OF MAKING THE SAME