SEARCH RESULTS for assignee:"hewlett packard company"

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(X0) 10390492: SYSTEM AND METHOD FOR SUBNET CONFIGURATION AND SELECTION

(A1) 20040184412: SYSTEM AND METHOD FOR SUBNET CONFIGURATION AND SELECTION

(B2) 7: SYSTEM AND METHOD FOR SUBNET CONFIGURATION AND SELECTION

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(X0) 10631001: III-NITRIDE LIGHT EMITTING DEVICES FABRICATED BY SUBSTRATE REMOVAL

(A1) 20040077114: III-NITRIDE LIGHT EMITTING DEVICES FABRICATED BY SUBSTRATE REMOVAL

(B2) 6: III-NITRIDE LIGHT EMITTING DEVICES FABRICATED BY SUBSTRATE REMOVAL

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(X0) 10047504: GROWING A LOW DEFECT GALLIUM NITRIDE BASED SEMICONDUCTOR

(A1) 20020075925: GROWING A LOW DEFECT GALLIUM NITRIDE BASED SEMICONDUCTOR

(B2) 6: GROWING A LOW DEFECT GALLIUM NITRIDE BASED SEMICONDUCTOR

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(X0) 09813570: Method Of Fabricating A Group III- V Semiconductor Light Emitting Device With Reduced Piezoelectric Field And Increased Efficiency.

(A1) 20010010372: Method Of Fabricating A Group III- V Semiconductor Light Emitting Device With Reduced Piezoelectric Field And Increased Efficiency.

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(X0) 09775765: HIGH STABILITY OPTICAL ENCAPSULATION AND PACKAGING FOR LIGHT-EMITTING DIODES IN THE GREEN, BLUE, AND NEAR UV RANGE

(A1) 20010010371: HIGH STABILITY OPTICAL ENCAPSULATION AND PACKAGING FOR LIGHT-EMITTING DIODES IN THE GREEN, BLUE, AND NEAR UV RANGE

(B2) 6: HIGH STABILITY OPTICAL ENCAPSULATION AND PACKAGING FOR LIGHT-EMITTING DIODES IN THE GREEN, BLUE, AND NEAR UV RANGE

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(X0) 09717647: GROUP III-V SEMICONDUCTOR LIGHT EMITTING DEVICES WITH REDUCED PIEZOELECTRIC FIELDS AND INCREASED EFFICIENCY

(B1) 6: GROUP III-V SEMICONDUCTOR LIGHT EMITTING DEVICES WITH REDUCED PIEZOELECTRIC FIELDS AND INCREASED EFFICIENCY

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(X0) 11330209: III-NITRIDE LIGHT EMITTING DEVICES FABRICATED BY SUBSTRATE REMOVAL

(A1) 20060121702: III-NITRIDE LIGHT EMITTING DEVICES FABRICATED BY SUBSTRATE REMOVAL

(B2) 7: III-NITRIDE LIGHT EMITTING DEVICES FABRICATED BY SUBSTRATE REMOVAL

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(X0) 09617324: ALUMINUM INDIUM GALLIUM NITRIDE-BASED LED HAVING THICK EPITAXIAL LAYER FOR IMPROVED LIGHT EXTRACTION

(B1) 6: ALUMINUM INDIUM GALLIUM NITRIDE-BASED LED HAVING THICK EPITAXIAL LAYER FOR IMPROVED LIGHT EXTRACTION

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(X0) 09778174: DIFFUSION BARRIER FOR INCREASED MIRROR REFLECTIVITY IN REFLECTIVE SOLDERABLE CONTACTS ON HIGH POWER LED CHIP

(A1) 20010004534: DIFFUSION BARRIER FOR INCREASED MIRROR REFLECTIVITY IN REFLECTIVE SOLDERABLE CONTACTS ON HIGH POWER LED CHIP

(B2) 6: DIFFUSION BARRIER FOR INCREASED MIRROR REFLECTIVITY IN REFLECTIVE SOLDERABLE CONTACTS ON HIGH POWER LED CHIP

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(X0) 09655752: Method of strain engineering and impurity control in III-V nitride semiconductor films and optoelectronic devices

(B1) 6: Method of strain engineering and impurity control in III-V nitride semiconductor films and optoelectronic devices

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(X0) 10785745: THIN FILM PHOSPHOR-CONVERTED LIGHT EMITTING DIODE DEVICE

(A1) 20040164307: THIN FILM PHOSPHOR-CONVERTED LIGHT EMITTING DIODE DEVICE

(B2) 7: THIN FILM PHOSPHOR-CONVERTED LIGHT EMITTING DIODE DEVICE

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(X0) 09764024: SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING A SILVER P-CONTACT

(A1) 20010015442: SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING A SILVER P-CONTACT

(B2) 6: SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING A SILVER P-CONTACT

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(X0) 11104310: III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING A SILVER P-CONTACT

(A1) 20050179051: III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING A SILVER P-CONTACT

(B2) 7: III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING A SILVER P-CONTACT