SEARCH RESULTS for assignee:"globalfoundries"

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(X0) 15046496: CHEMICAL MECHANICAL POLISHING APPARATUS

(A1) 20160158912: CHEMICAL MECHANICAL POLISHING APPARATUS

(B2) 1: CHEMICAL MECHANICAL POLISHING APPARATUS

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(X0) 15622061: METHODS, APPARATUS AND SYSTEM FOR THRESHOLD VOLTAGE CONTROL IN FINFET DEVICES

(B1) 1: METHODS, APPARATUS AND SYSTEM FOR THRESHOLD VOLTAGE CONTROL IN FINFET DEVICES

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(X0) 15657666: WAFER RIGIDITY WITH REINFORCEMENT STRUCTURE

(A1) 20180019214: WAFER RIGIDITY WITH REINFORCEMENT STRUCTURE

(B2) 1: WAFER RIGIDITY WITH REINFORCEMENT STRUCTURE

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(X0) 15657666: WAFER RIGIDITY WITH REINFORCEMENT STRUCTURE

(A1) 20180019214: WAFER RIGIDITY WITH REINFORCEMENT STRUCTURE

(B2) 1: WAFER RIGIDITY WITH REINFORCEMENT STRUCTURE

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(X0) 15794600: FIELD-EFFECT TRANSISTORS WITH FINS HAVING INDEPENDENTLY-DIMENSIONED SECTIONS

(A1) 20190131177: FIELD-EFFECT TRANSISTORS WITH FINS HAVING INDEPENDENTLY-DIMENSIONED SECTIONS

(B2) 1: FIELD-EFFECT TRANSISTORS WITH FINS HAVING INDEPENDENTLY-DIMENSIONED SECTIONS

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(X0) 15858691: CRACK PREVENT AND STOP FOR THIN GLASS SUBSTRATES

(A1) 20180182671: CRACK PREVENT AND STOP FOR THIN GLASS SUBSTRATES

(B2) 1: CRACK PREVENT AND STOP FOR THIN GLASS SUBSTRATES

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(X0) 15875609: METHOD, APPARATUS, AND SYSTEM HAVING SUPER STEEP RETROGRADE WELL WITH ENGINEERED DOPANT PROFILES

(A1) 20180145079: METHOD, APPARATUS, AND SYSTEM HAVING SUPER STEEP RETROGRADE WELL WITH ENGINEERED DOPANT PROFILES

(B2) 1: METHOD, APPARATUS, AND SYSTEM HAVING SUPER STEEP RETROGRADE WELL WITH ENGINEERED DOPANT PROFILES

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(X0) 15920303: METHODS, APPARATUS AND SYSTEM FOR PROVIDING A PRE-RMG REPLACEMENT METAL CONTACT FOR A FINFET DEVICE

(B1) 1: METHODS, APPARATUS AND SYSTEM FOR PROVIDING A PRE-RMG REPLACEMENT METAL CONTACT FOR A FINFET DEVICE

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(X0) 15950291: GRAPHENE CONTACTS ON SOURCE/DRAIN REGIONS OF FINFET DEVICES

(A1) 20180233413: GRAPHENE CONTACTS ON SOURCE/DRAIN REGIONS OF FINFET DEVICES

(B2) 1: GRAPHENE CONTACTS ON SOURCE/DRAIN REGIONS OF FINFET DEVICES

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(X0) 15966998: RECEIVER CIRCUITS FOR MILLIMETER WAVE DEVICES

(B1) 1: RECEIVER CIRCUITS FOR MILLIMETER WAVE DEVICES

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(X0) 16004935: SELF-ALIGNED GATE CONTACT AND CROSS-COUPLING CONTACT FORMATION

(B1) 1: SELF-ALIGNED GATE CONTACT AND CROSS-COUPLING CONTACT FORMATION

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(X0) 16026820: POST GATE SILICON GERMANIUM CHANNEL CONDENSATION AND METHOD FOR PRODUCING THE SAME

(A1) 20190043967: POST GATE SILICON GERMANIUM CHANNEL CONDENSATION AND METHOD FOR PRODUCING THE SAME

(B2) 1: POST GATE SILICON GERMANIUM CHANNEL CONDENSATION AND METHOD FOR PRODUCING THE SAME

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(X0) 16127645: SELF-ALIGNED LOCAL INTERCONNECT TECHNOLOGY

(A1) 20190013268: SELF-ALIGNED LOCAL INTERCONNECT TECHNOLOGY

(B2) 1: SELF-ALIGNED LOCAL INTERCONNECT TECHNOLOGY

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(X0) 16159877: FinFET CUT ISOLATION OPENING REVISION TO COMPENSATE FOR OVERLAY INACCURACY

(B1) 1: FinFET CUT ISOLATION OPENING REVISION TO COMPENSATE FOR OVERLAY INACCURACY

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(X0) 15834151: INTERCONNECTS WITH CUTS FORMED BY BLOCK PATTERNING

(A1) 20190181040: INTERCONNECTS WITH CUTS FORMED BY BLOCK PATTERNING

(B2) 1: INTERCONNECTS WITH CUTS FORMED BY BLOCK PATTERNING

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(X0) 15838281: DEVICES WITH LOCALIZED STRAIN AND STRESS TUNING

(A1) 20190177155: DEVICES WITH LOCALIZED STRAIN AND STRESS TUNING

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(X0) 15840881: MONOLITHIC INTEGRATION OF PIEZOELECTRIC MICROMACHINED ULTRASONIC TRANSDUCERS AND CMOS AND METHOD FOR PRODUCING THE SAME

(A1) 20190177160: MONOLITHIC INTEGRATION OF PIEZOELECTRIC MICROMACHINED ULTRASONIC TRANSDUCERS AND CMOS AND METHOD FOR PRODUCING THE SAME

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(X0) 16276045: DUAL-CURVATURE CAVITY FOR EPITAXIAL SEMICONDUCTOR GROWTH

(A1) 20190181243: DUAL-CURVATURE CAVITY FOR EPITAXIAL SEMICONDUCTOR GROWTH

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(X0) 15834443: ON-CHIP RESISTORS WITH DIRECT WIRING CONNECTIONS

(A1) 20190181215: ON-CHIP RESISTORS WITH DIRECT WIRING CONNECTIONS

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(X0) 15837671: METHODS OF FORMING CONTACT STRUCTURES ON INTEGRATED CIRCUIT PRODUCTS

(A1) 20190181042: METHODS OF FORMING CONTACT STRUCTURES ON INTEGRATED CIRCUIT PRODUCTS

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